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IRFU5505GPBF [IRF]

暂无描述;

IRFU5505GPBF


元器件型号：	IRFU5505GPBF
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	暂无描述
PDF文件：	总7页 (文件大小：279K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFU5505GPBF参数

IRFU5505HR

暂无描述

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0 IRF

IRFU5505PBF

ULTRA LOW ON-RESISTANCE

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16 KERSEMI

IRFU5505PBF

Ultra Low On-Resistance

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59 IRF

IRFU5505PBF

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, HALOGEN AND LEAD FREE, PLASTIC, IPAK-3

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0 INFINEON

IRFU5505PBF

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, HALOGEN AND LEAD FREE, PLASTIC, IPAK-3

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0 IRF

IRFU6215

Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A)

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66 IRF

IRFU6215PBF

HEXFETÂ® Power MOSFET

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20 KERSEMI

IRFU6215PBF

HEXFET㈢ Power MOSFET

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20 IRF

IRFU7440PBF

Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET

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0 INFINEON

IRFU9010

P-CHANNEL POWER MOSFETS

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102 SAMSUNG

IRFU9010

Transistor

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1 VISHAY

IRFU9010PBF

Trans MOSFET P-CH 50V 5.3A 3-Pin(3+Tab) IPAK

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1 VISHAY

IRFU9012

TRANSISTOR | MOSFET | P-CHANNEL | 50V V(BR)DSS | 4.5A I(D) | TO-251AA

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52 ETC

IRFU9012

Power Field-Effect Transistor, 4.5A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 SAMSUNG

IRFU9012

TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3, FET General Purpose Power

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0 VISHAY

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