IRFU9012 [SAMSUNG]

Power Field-Effect Transistor, 4.5A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET;
IRFU9012
型号: IRFU9012
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Power Field-Effect Transistor, 4.5A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

脉冲 晶体管
文件: 总1页 (文件大小:33K)
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IRFU9012PBF

TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3, FET General Purpose Power

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0 VISHAY

IRFU9014

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A)

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97 IRF

IRFU9014

P-CHANNEL POWER MOSFETS

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105 SAMSUNG

IRFU9014

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A)

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81 IRF

IRFU9014

HEXFET Power MOSFET

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53 IRF

IRFU9014

Power MOSFET

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61 VISHAY

IRFU9014

Power MOSFET

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38 KERSEMI

IRFU9014

Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

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0 SAMSUNG

IRFU9014PBF

Power MOSFET

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18 KERSEMI

IRFU9014PBF

Power MOSFET

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21 VISHAY

IRFU9014PBF

HEXFET㈢ Power MOSFET

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23 IRF

IRFU9020

Power MOSFET

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37 VISHAY

IRFU9020

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

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116 IRF

IRFU9020

Power MOSFET

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15 KERSEMI

IRFU9020PBF

Power MOSFET

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16 KERSEMI