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IRFR9010PBF [IRF]

Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,;

IRFR9010PBF


元器件型号：	IRFR9010PBF
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, 脉冲晶体管
PDF文件：	总1页 (文件大小：54K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFR9010PBF参数

IRFR9010TR

Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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1 IRF

IRFR9010TR

Transistor

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0 VISHAY

IRFR9010TRL

Transistor

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0 VISHAY

IRFR9010TRLPBF

TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power

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0 VISHAY

IRFR9010TRPBF

TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power

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0 VISHAY

IRFR9010TRR

Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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0 IRF

IRFR9012

TRANSISTOR | MOSFET | P-CHANNEL | 50V V(BR)DSS | 4.5A I(D) | TO-252AA

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98 ETC

IRFR9012

TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General Purpose Power

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0 VISHAY

IRFR9012-T1

Power Field-Effect Transistor, 4.5A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

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0 SAMSUNG

IRFR9012TR

TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General Purpose Power

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0 VISHAY

IRFR9012TRL

TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General Purpose Power

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0 VISHAY

IRFR9012TRPBF

TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power

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0 VISHAY

IRFR9014

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A)

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44 IRF

IRFR9014

HEXFET Power MOSFET

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99 IRF

IRFR9014

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A)

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121 IRF

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