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IRFR9012 [ETC]

TRANSISTOR | MOSFET | P-CHANNEL | 50V V(BR)DSS | 4.5A I(D) | TO-252AA ; 晶体管| MOSFET | P沟道| 50V V（ BR ） DSS | 4.5AI （D ） | TO- 252AA\n
IRFR9012
元器件型号： IRFR9012
生产厂家： ETC    ETC
描述和应用：

TRANSISTOR | MOSFET | P-CHANNEL | 50V V(BR)DSS | 4.5A I(D) | TO-252AA
晶体管| MOSFET | P沟道| 50V V（ BR ） DSS | 4.5AI （D ） | TO- 252AA\n

晶体 晶体管
PDF文件： 总8页 (文件大小：553K)
下载文档：  下载PDF数据表文档文件
型号参数：IRFR9012参数
 查看货源

IRFR9012-T1

 Power Field-Effect Transistor, 4.5A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

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0 SAMSUNG

IRFR9012TR

 TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General Purpose Power

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0 VISHAY

IRFR9012TRL

 TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General Purpose Power

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0 VISHAY

IRFR9012TRPBF

 TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power

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0 VISHAY

IRFR9014

 Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A)

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44 IRF

IRFR9014

 HEXFET Power MOSFET

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99 IRF

IRFR9014

 Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A)

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121 IRF

IRFR9014

 P-CHANNEL POWER MOSFETS

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282 SAMSUNG

IRFR9014

 Power MOSFET

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287 VISHAY

IRFR9014

 Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

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8 SAMSUNG

IRFR9014PBF

 Power MOSFET

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28 VISHAY

IRFR9014PBF

 HEXFET㈢ Power MOSFET

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47 IRF

IRFR9014-T1

 Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

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0 SAMSUNG

IRFR9014TR

 Power MOSFET

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45 VISHAY

IRFR9014TRA

 Power MOSFET

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18 KERSEMI
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