IRFR15N20DTRPBF [INFINEON]
Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3;
| 型号： | IRFR15N20DTRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 |
| 文件： | 总11页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95355A
IRFR15N20DPbF
IRFU15N20DPbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
200V
RDS(on) max
ID
17A
0.165Ω
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR15N20D
I-Pak
IRFU15N20D
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
17
12
A
68
PD @TC = 25°C
PD @TA = 25°C
Power Dissipation
140
Power Dissipation*
3.0
W
W/°C
V
Linear Derating Factor
0.96
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
8.3
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
RθJA
RθJA
Junction-to-Case
–––
–––
–––
1.04
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
50
°C/W
110
Notes through ꢀare on page 10
www.irf.com
1
1/17/05
IRFR/U15N20DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200 ––– –––
––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.165
VGS(th)
Ω
V
VGS = 10V, ID = 10A
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
Gate Threshold Voltage
3.0
––– 5.5
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 10A
ID = 10A
gfs
4.0
–––
–––
–––
–––
–––
–––
–––
––– –––
S
Qg
27
6.9
14
41
10
21
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 160V
VGS = 10V,
VDD = 100V
9.7 –––
32 –––
17 –––
8.9 –––
ID = 10A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.8Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 910 –––
––– 170 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
––– 1380 –––
––– 67 –––
––– 150 –––
31 –––
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
–––
Max.
260
10
Units
mJ
EAS
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
14
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
17
68
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.5
––– 130 200
––– 610 920
V
TJ = 25°C, IS = 10A, VGS = 0V
ns
TJ = 25°C, IF = 10A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR/U15N20DPbF
100
10
100
10
1
VGS
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
TOP
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
BOTTOM 5.0V
1
5.0V
0.1
0.01
5.0V
20µs PULSE WIDTH
T = 175 C
J
20µs PULSE WIDTH
°
°
T = 25 C
J
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.5
17A
=
I
D
°
T = 175 C
3.0
2.5
2.0
1.5
1.0
0.5
0.0
J
10
1
°
T = 25 C
J
0.1
0.01
V
= 50V
DS
20µs PULSE WIDTH
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
5
6
7
8
9
10 11
12
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFR/U15N20DPbF
20
16
12
8
I
D
= 10A
V
= 0V,
f = 1 MHZ
GS
10000
1000
100
C
= C + C
,
C
ds
SHORTED
iss
gs
gd
V
= 160V
= 100V
= 40V
DS
C
= C
rss
gd
V
V
DS
C
= C + C
oss
ds
gd
DS
Ciss
Coss
Crss
4
10
FOR TEST CIRCUIT
1
10
100
1000
SEE FIGURE 13
0
V
, Drain-to-Source Voltage (V)
0
10
20
30 40
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 175 C
J
100
10
1
100µsec
1msec
°
T = 25 C
J
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
V
= 0 V
GS
2.0
0.1
0.1
0.0
0.4
V
0.8
1.2
1.6
2.4
1
10
100
1000
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFR/U15N20DPbF
RD
20
15
10
5
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
2
DM
0.10
0.05
0.1
t
1
t
0.02
0.01
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U15N20DPbF
600
500
400
300
200
100
0
I
D
15V
TOP
4.2A
7.2A
BOTTOM 10A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
VGS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFR/U15N20DPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFR/U15N20DPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S E MB L Y
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 9 = 1999
WEEK 16
IRFU120
916A
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
12
34
LINE A
Note: "P" in ass embly line position
ASSEMBLY
LOT CODE
indicates "L ead- F r ee"
OR
PART NUMBER
DAT E CODE
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12 34
YEAR 9 = 1999
AS S E MB L Y
LOT CODE
WE E K 16
A= ASSEMBLYSITE CODE
8
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IRFR/U15N20DPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
WIT H AS S EMBL Y
DAT E CODE
YEAR 9 = 1999
WE E K 19
RECTIFIER
LOGO
IRFU120
919A
78
LOT CODE 5678
ASS EMBLED ON WW 19, 1999
IN THE ASSEMBLY LINE "A"
56
LINE A
AS S E MB L Y
LOT CODE
Note: "P" in assembly line
pos ition indi cates "Lead-F ree"
OR
PART NUMBER
DAT E CODE
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56 78
YEAR 9 = 1999
ASSEMBLY
LOT CODE
WEE K 19
A = AS S E MB L Y S IT E CODE
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9
IRFR/U15N20DPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
Starting TJ = 25°C, L = 4.9mH
RG = 25Ω, IAS = 10A.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 10A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/05
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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IRFR18N15DTRPBF
Power Field-Effect Transistor, 18A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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