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IRF9630 [INFINEON]

Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A); 功率MOSFET ( VDSS = -200V , RDS(ON) = 0.80ohm ,ID = -6.5A )
IRF9630
型号: IRF9630
厂家: Infineon    Infineon
描述:

Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
功率MOSFET ( VDSS = -200V , RDS(ON) = 0.80ohm ,ID = -6.5A )

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件: 总6页 (文件大小:178K)
中文:  中文翻译
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相关型号:

IRF9630-004

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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IRF9630-004PBF

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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IRF9630-009

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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IRF9630-009PBF

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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IRF9630F

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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IRF9630FPBF

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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IRF9630FX

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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IRF9630FXPBF

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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IRF9630PBF

Power MOSFET

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IRF9630S

Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)

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IRF9630S

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN

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IRF9630SPBF

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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IRF9630STRL

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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IRF9630STRLPBF

TRANSISTOR 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

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IRF9630STRR

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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IRF9630STRR

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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IRF9631

P-CHANNEL POWER MOSFETS

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IRF9632

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IRF9632

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