IRF7459UTRPBF [INFINEON]
Power Field-Effect Transistor, 12A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8;
| 型号： | IRF7459UTRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 12A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 |
| 文件： | 总8页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 93885B
IRF7459
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
VDSS
20V
RDS(on) max ID
9.0mΩ
12A
l High Frequency Buck Converters for
Computer Processor Power
Benefits
A
A
1
2
3
4
8
7
D
S
S
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
D
6
5
S
D
D
G
SO-8
Top View
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
20
± 12
V
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
12
10
A
100
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.5
W
W
1.6
0.02
W/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
50
Units
–––
°C/W
Notes through are on page 8
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1
3/25/01
IRF7459
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20 ––– –––
––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
–––
0.6
6.7 9.0
VGS = 10V, ID = 12A
mΩ VGS = 4.5V, ID = 9.6A
VGS = 2.8V, ID = 6.0A
RDS(on)
Static Drain-to-Source On-Resistance
8.0
11
11
22
VGS(th)
IDSS
Gate Threshold Voltage
––– 2.0
V
VDS = VGS, ID = 250µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
––– ––– 20
––– ––– 100
––– ––– 200
––– ––– -200
µA
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 16V, ID = 9.6A
ID = 9.6A
32
––– –––
S
Qg
–––
–––
–––
–––
–––
–––
–––
–––
23
35
10
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
6.6
nC VDS = 10V
VGS = 4.5V
6.3 9.5
17 26
VGS = 0V, VDS = 10V
VDD = 10V,
10 –––
4.5 –––
20 –––
5.0 –––
ID = 9.6A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2480 –––
––– 1030 –––
––– 130 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
290
12
Units
mJ
EAS
IAR
Avalanche Current
–––
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
Continuous Source Current
(Body Diode)
2.5
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
100
S
p-n junction diode.
––– 0.84 1.3
––– 0.69 –––
––– 70 105
––– 70 105
––– 70 105
––– 75 113
V
TJ = 25°C, IS = 9.6A, VGS = 0V
TJ = 125°C, IS = 9.6A, VGS = 0V
TJ = 25°C, IF = 9.6A, VR= 15V
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 9.6A, VR=15V
nC di/dt = 100A/µs
Qrr
2
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IRF7459
1000
100
10
1000
100
10
VGS
VGS
TOP
15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
TOP
15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
BOTTOM 2.00V
2.0V
2.0V
1
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
12A
=
I
D
1.5
1.0
0.5
0.0
100
10
1
°
T = 150 C
J
°
T = 25 C
J
V
= 15V
DS
V
= 10V
20µs PULSE WIDTH
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2.0
2.5
3.0
3.5 4.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7459
4000
10
8
V
GS
= 0V,
f = 1MHz
C
I
D
=
9.6A
C
= C + C
SHORTED
ds
V
= 10V
iss
gs
gd ,
gd
DS
C
= C
gd
rss
C
= C + C
3200
2400
1600
800
0
oss ds
C
iss
6
4
C
oss
2
C
rss
0
0
10
20
30
40
50
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
10us
100us
1ms
°
T = 150 C
J
°
T = 25 C
J
10ms
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
1
0.8
1.4
2.0
2.6
0.1
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7459
RD
15
12
9
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
V
DS
3
90%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
J
x
Z
+ T
thJA A
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7459
0.010
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
V
= 4.5V
GS
0.009
0.008
0.007
I
= 12A
D
V
= 10V
GS
2.0
2.5
3.0
3.5
4.0
4.5
0
20
40
60
80
100
V
Gate -to -Source Voltage (V)
I
, Drain Current (A)
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 14. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
700
V
DS
I
D.U.T.
-
D
V
G
TOP
4.3A
7.7A
BOTTOM 9.6A
V
GS
600
500
400
300
200
100
0
3mA
Charge
I
I
D
G
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(B R )D S S
DRIVER
L
t
V
p
DS
D.U.T
R
G
+
-
V
25
50
75
100
125
150
DD
I
AS
°
Starting T , Junction Temperature ( C)
20 V
J
0.01
Ω
t
p
I
A S
Fig 14c. Maximum Avalanche Energy
Fig 14a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7459
SO-8 Package Details
INCH ES
M ILLIM ET ERS
D IM
D
M IN
M AX
.0688
.0098
.018
M IN
1.35
0.10
0.36
0.19
4.80
3.81
M AX
1.75
0.25
0.46
0.25
4.98
3.99
5
- B -
A
.0532
.0040
.014
A1
B
8
1
7
2
6
3
5
4
5
H
E
C
D
E
.0075
.189
.0098
.196
0.25 (.010)
M
A M
- A -
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K x 45°
6X
e1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C -
0.10 (.004)
6
C
8X
L
8X
L
A1
B
8X
θ
0.25 (.010)
M
C A S B S
RECOM MENDED FOOTPRINT
NOTES:
0.72 (.028 )
8X
1. DIM ENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIM ENSION : INCH.
3. DIM ENSIONS ARE SHOW N IN MILLIMETERS (INCHES).
4. OUTLINE CONFORM S TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 )
1.78 (.070)
8X
5
DIMENSION DOES NOT INCLUDE M OLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
1.27 ( .050 )
3X
SO-8 Part Marking
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7
IRF7459
SO-8 Tape and Reel
TERM INAL NUM BER
1
12.3
11.7
(
(
.484
.461
)
)
8.1 ( .318
7.9 ( .312
)
)
FEED DIRECTION
N OTES :
1. CO NTRO LLING DIM E NSIO N : M ILLIM ETER .
2. ALL DIM ENS ION S ARE SHO W N IN M ILL IM E TER S(INC HES).
3. OU TL IN E CO N FO RM S TO EIA-481
& EIA-541.
330.00
(12.992)
M AX.
14.40 ( .566
12.40 ( .488
)
)
NOTES
:
1. CO NTROLLING DIM ENSION : M ILLIMETER.
2. OUTLINE CONFORM S TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Starting TJ = 25°C, L = 6.3mH
RG = 25Ω, IAS = 9.6A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
8
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