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2N6782TXV [IRF]

Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF;

2N6782TXV


元器件型号：	2N6782TXV
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF 开关脉冲晶体管
PDF文件：	总5页 (文件大小：146K)
下载文档：	下载PDF数据表文档文件
型号参数：2N6782TXV参数

2N6782U

N-CHANNEL MOSFET

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9 MICROSEMI

2N6783

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.2A I(D) | TO-39

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15 ETC

2N6784

200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package

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42 ETC

2N6784

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package

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23 SEME-LAB

2N6784

N-CHANNEL MOSFET

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16 MICROSEMI

2N6784

2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET

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30 FAIRCHILD

2N6784

N-CHANNEL ENHANCEMENT-MODE

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7 NJSEMI

2N6784U

N-CHANNEL MOSFET

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8 MICROSEMI

2N6785

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 1.2A I(D) | TO-39

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81 ETC

2N6785

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 INFINEON

2N6786

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package

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61 SEME-LAB

2N6786

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package

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24 SEME-LAB

2N6786

N-CHANNEL ENHANCEMENTE-MODE

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12 NJSEMI

2N6786

Power Field-Effect Transistor

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2 MICROSEMI

2N6786

TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.2A I(D),TO-39

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4 RENESAS

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