2N6785 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 1.2A I(D) | TO-39 ; 晶体管| MOSFET | N沟道| 350V V( BR ) DSS | 1.2AI (D ) | TO- 39\n
2N6785
型号: 2N6785
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 1.2A I(D) | TO-39
晶体管| MOSFET | N沟道| 350V V( BR ) DSS | 1.2AI (D ) | TO- 39\n

晶体 晶体管
文件: 总2页 (文件大小:136K)
下载:  下载PDF数据表文档文件

2N6786

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package

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61 SEME-LAB

2N6786

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package

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24 SEME-LAB

2N6786

N-CHANNEL ENHANCEMENTE-MODE

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12 NJSEMI

2N6786

Power Field-Effect Transistor

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2 MICROSEMI

2N6786

TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.2A I(D),TO-39

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4 RENESAS

2N6786E3

Power Field-Effect Transistor

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0 MICROSEMI

2N6786PBF

Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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0 IRF

2N6786TX

1.25A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

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1 RENESAS

2N6787

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-39

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17 ETC

2N6788

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A)

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136 IRF

2N6788

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A)

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39 IRF

2N6788

N-CHANNEL POWER MOSFET ENHANCEMENT MODE

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26 SEME-LAB

2N6788

N-CHANNEL MOSFET

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29 MICROSEMI

2N6788

N-CHANNEL POWER MOSFETS

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21 NJSEMI

2N6788E

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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0 IRF