IS2-1009EH-Q [INTERSIL]

Radiation Hardened 2.5V Reference; 抗辐射2.5V参考


型号：	IS2-1009EH-Q
厂家：	Intersil
描述：	Radiation Hardened 2.5V Reference 抗辐射2.5V参考
文件：	总3页 (文件大小：128K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Radiation Hardened 2.5V Reference

IS-1009RH, IS-1009EH

Features

• Electrically screened to SMD # 5962-00523

• QML qualified per MIL-PRF-38535 requirements

• EH version acceptance tested to 50krad(Si) (LDR)

The Star*Power Radiation Hardened IS-1009RH, IS-1009EH

are a 2.5V shunt regulator diode is designed to provide a stable

2.5V reference over a wide current range.

These devices are designed to maintain stability over the full

military temperature range and over time. The 0.2% reference

tolerance is achieved by on-chip trimming.

• Radiation environment

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300 krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . 50krad(Si)

- Latch-up immune. . . . . . . . . . . . . . . . dielectrically isolated

An adjustment terminal is provided to allow for the calibration

of system errors. The use of this terminal to adjust the

reference voltage does not effect the temperature coefficient.

• Reverse breakdown voltage (V ) . . . . . . . . . . . . . . . . . . . . 2.5V

• Change in V vs. current (400µA to 10mA) . . . . . . . . . . .6mV

Constructed with the Intersil dielectrically isolated EBHF

process, these devices are immune to Single Event Latch-up

and have been specifically designed to provide highly reliable

performance in harsh radiation environments.

• Change in V vs. temperature (-55°C to +125°C). . . . .15mV

• Maximum reverse breakdown current . . . . . . . . . . . . . 20mA

• Device is tested with 10µF shunt capacitance connected

from V+ to V-, which provides optimum stability

Specifications for Rad Hard QML devices are controlled by the

Defense Logistics Agency Land and Maritime (DLA). The SMD

numbers listed here must be used when ordering.

• Interchangeable with 1009 and 136 industry types

Detailed Electrical Specifications for these devices are

contained in SMD 5962-00523.

Applications

• Power supply monitoring

• Reference for 5V systems

• A/D and D/A reference

Pin Configurations

IS2-1009RH, IS2-1009EH

(TO-206AB CAN)

BOTTOM VIEW

V+

V-

ADJ

ISYE-1009RH, ISYE-1009EH

(SMD.5)

BOTTOM VIEW

ADJ

V+

V-

September 12, 2013

FN4780.6

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Intersil (and design) and Star*Power are trademarks owned by Intersil Corporation or one of its subsidiaries.

All other trademarks mentioned are the property of their respective owners.

IS-1009RH, IS-1009EH

Ordering Information

INTERNAL

MKT. NUMBER

(Note 1)

PART

MARKING

(Pb-Free)

ORDERING SMD NUMBER

(Note 2)

TEMP. RANGE

(°C)

5962F0052301VXC

5962F0052301QXC

5962F0052302VXC

5962F0052301VYC

5962F0052301QYC

5962F0052302VYC

IS2-1009RH/PROTO

ISYE-1009RH/PROTO

5962F0052301V9A

IS0-1009RH/SAMPLE

5962F0052302V9A

NOTES:

IS2-1009RH-Q

F00523V

-55 to +125

IS2-1009RH-8

F00523 01QXC Q

IS2-1009EH-Q

F00523V

ISYE-1009RH-Q

ISYE-1009RH-8

ISYE-1009EH-Q

IS2-1009RH/PROTO

ISYE-1009RH/PROTO

IS0-1009RH-Q

Q 5962F00 52301VYC

Q 5962F00 52301QYC

Q 5962F00 52302VYC

IS2-1009RH/PROTO

ISYE-1009RH/PROTO

IS0-1009RH/SAMPLE

IS0-1009EH-Q

1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both

SnPb and Pb-free soldering operations.

2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the

“Ordering Information” table on page 2 must be used when ordering.

FN4780.6

September 12, 2013

IS-1009RH, IS-1009EH

Die Characteristics

DIE DIMENSIONS

Backside Finish

1270µm x 1778µm (50 mils x 70 mils)

Silicon

Thickness: 356µm ±25.4µm (14 mils ±1 mil)

ASSEMBLY RELATED INFORMATION

INTERFACE MATERIALS

Glassivation

Substrate Potential

Unbiased (DI)

Type: Nitride (Si N )

Nitride Thickness: 4.0kÅ ±1.0kÅ

ADDITIONAL INFORMATION

Worst Case Current Density

Top Metallization

<1.0 x 10 A/cm

Type: AlSiCu

Thickness: 16.0kÅ ±2kÅ

Transistor Count

Substrate

EBHF, Dielectric Isolation

Metallization Mask Layout

IS-1009RH, IS-1009EH

ADJ

V+

V-

For additional products, see www.intersil.com/product_tree

Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted

in the quality certifications found at www.intersil.com/design/quality

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time

without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be

accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third

parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

FN4780.6

September 12, 2013

IS2-1009EH-Q [INTERSIL]

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