IS2-1009RH-Q [INTERSIL]
Radiation Hardened 2.5V Reference; 抗辐射2.5V参考
| 型号： | IS2-1009RH-Q |
| 厂家： | 
Intersil |
| 描述： | Radiation Hardened 2.5V Reference |
| 文件： | 总2页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IS-1009RH
®
Data Sheet
J anuary 27, 2006
FN4780.4
Radiation Hardened 2.5V Reference
Features
The Star*Power Radiation Hardened IS-1009RH is a 2.5V
shunt regulator diode designed to provide a stable 2.5V
reference over a wide current range.
• Electrically Screened to SMD # 5962-00523
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
The device is designed to maintain stability over the full
miitary temperature range and over time. The 0.2%
reference tolerance is achieved by on-chip trimming.
- Total Dose . . . . . . . . . . . . . . . . . . . . 300 krad(Si) (Max)
- Latch-up Immune . . . . . . . . . . . . . Dielectrically Isolated
• Reverse Breakdown Voltage (V ) . . . . . . . . . . . . . . . 2.5V
Z
An adjustment terminal is provided to allow for the
calibration of system errors. The use of this terminal to
adjust the reference voltage does not effect the temperature
coefficient.
• Change in V vs. Current (400µA to 10mA). . . . . . . . 6mV
Z
• Change in V vs. Temp (-55°C to 125°C) . . . . . . . . 15mV
Z
• Max Reverse Breakdown Current . . . . . . . . . . . . . . 20mA
Constructed with the Intersil dielectrically isolated EBHF
process, these devices are immune to Single Event Latch-up
and have been specifically designed to provide highly
reliable performance in harsh radiation environments.
• Device is tested with 10µF shunt capacitance connected
from V+ to V-, which provides optimum stability
• Interchangeable with 1009 and 136 Industry Types
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Applications
• Power Supply Monitoring
• Reference for 5V Systems
• A/D and D/A Reference
Detailed Electrical Specifications for these devices are
contained in SMD 5962-00523.
Pinouts
Ordering Information
IS2-1009RH (TO-206AB CAN)
TEMP.
RANGE
(°C)
BOTTOM VIEW
ORDERING
NUMBER
INTERNAL
MKT. NUMBER
PART
MARKING
V+
2
5962F0052301VXC IS2-1009RH-Q F00523V
-55 to 125
5962F0052301QXC IS2-1009RH-8 F00523 01QXC Q -55 to 125
V-
3
ADJ
1
5962F0052301VYC ISYE-1009RH-Q Q 5962F00
52301VYC
-55 to 125
-55 to 125
-55 to 125
-55 to 125
5962F0052301QYC ISYE-1009RH-8 Q 5962F00
52301QYC
ISYE-1009RH (SMD.5)
IS2-1009RH/Proto IS2-1009RH/
Proto
IS2-1009RH/
Proto
BOTTOM VIEW
ISYE-1009RH/Proto ISYE-1009RH/ ISLYE-
Proto 1009RH/Proto
2
ADJ
V+
V-
3
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2000, 2006. Star*Power™ is a trademark of Intersil Corporation. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
1
IS-1009RH
Die Characteris tics
DIE DIMENSIONS
Backside Finish
1270µm x 1778µm (50 mils x 70 mils)
Silicon
Thickness: 483µm ±25.4µm (19 mils ±1 mil)
ASSEMBLY RELATED INFORMATION
INTERFACE MATERIALS
Glassivation
Substrate Potential
Unbiased (DI)
Type: Nitride (Si N ) over Silox (SiO )
Nitride Thickness: 4.0kÅ ±1.0kÅ
Silox Thickness: 12.0kÅ ±4.0kÅ
3
4
2
ADDITIONAL INFORMATION
Worst Case Current Density
5
2
<1.0 x 10 A/cm
Top Metallization
Type: AlSiCu
Transistor Count
Thickness: 16.0kÅ ±2kÅ
26
Substrate
EBHF, Dielectric Isolation
Metallization Mas k Layout
IS-1009RH
ADJ
V+
V-
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN4780.4
2
January 27, 2006
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