HS9-508ARH-T [INTERSIL]

Radiation Hardened 8 Channel CMOS Analog Multiplexer with Overvoltage Protection; 抗辐射8通道CMOS模拟多路复用器与过电压保护
HS9-508ARH-T
型号: HS9-508ARH-T
厂家: Intersil    Intersil
描述:

Radiation Hardened 8 Channel CMOS Analog Multiplexer with Overvoltage Protection
抗辐射8通道CMOS模拟多路复用器与过电压保护

复用器 CD
文件: 总3页 (文件大小:76K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HS-508ARH-T  
Data Sheet  
July 1999  
File Number 4605.1  
Radiation Hardened 8 Channel CMOS  
Analog Multiplexer with Overvoltage  
Protection  
Intersil‘s Satellite Applications FlowTM (SAF) devices are  
fully tested and guaranteed to 100kRAD total dose. This  
QML Class T device is processed to a standard flow  
intended to meet the cost and shorter lead-time needs of  
large volume satellite manufacturers, while maintaining a  
high level of reliability.  
Features  
• QML Class T, Per MIL-PRF-38535  
• Radiation Performance  
5
- Gamma Dose (γ) 1 x 10 RAD(Si)  
- No Latch-Up, Dielectrically Isolated Device Islands  
2
- SEP LET > 110MeV/mg/cm  
• Analog/Digital Overvoltage Protection  
• Fail Safe with Power Loss (No Latchup)  
• Break-Before-Make Switching  
The HS-508ARH-T is a dielectrically isolated, radiation  
hardened, CMOS analog multiplexer incorporating an  
important feature; it withstands analog input voltages much  
greater than the supplies. This is essential in any system  
where the analog inputs originate outside the equipment.  
They can withstand a continuous input up to 10V greater  
than either supply, which eliminates the possibility of  
damage when supplies are off, but input signals are present.  
Equally important, it can withstand brief input transient  
spikes of several hundred volts; which otherwise would  
require complex external protection networks. Necessarily,  
ON resistance is somewhat higher than similar unprotected  
devices, but very low leakage current combine to produce  
low errors. Reference Application Notes 520 and 521,  
available from the Semiconductor Products Division of  
Intersil, for further information on the HS-508ARH-T  
multiplexer in general.  
• DTL/TTL and CMOS Compatible  
• Analog Signal Range ±15V  
• Fast Access Time  
• Supply Current at 1MHz Address Toggle (Typ) 4mA  
• Standby Power (Typ.) 7.5mW  
Pinouts  
HS1-508ARH-T (SBDIP), CDIP2-T16  
TOP VIEW  
AO  
EN  
1
2
3
4
5
6
7
8
16 A1  
15 A2  
V-  
14 GND  
13 V+  
IN 1  
IN 2  
IN 3  
IN 4  
OUT  
Specifications  
12 IN 5  
11 IN 6  
10 IN 7  
Specifications for Rad Hard QML devices are controlled by  
the Defense Supply Center in Columbus (DSCC). The SMD  
numbers listed below must be used when ordering.  
9
IN 8  
Detailed Electrical Specifications for the HS-508ARH-T  
are contained in SMD 5962-96742. A “hot-link” is provided  
from our website for downloading.  
www.intersil.com/spacedefense/newsafclasst.asp  
HS9-508ARH-T (FLATPACK), CDFP4-F16  
TOP VIEW  
Intersil‘s Quality Management Plan (QM Plan), listing all  
Class T screening operations, is also available on our  
website.  
A0  
A1  
A2  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
EN  
V-  
www.intersil.com/quality/manuals.asp  
GND  
V+  
IN1  
IN2  
Ordering Information  
IN5  
IN6  
IN7  
IN8  
TEMP.  
IN3  
ORDERING  
NUMBER  
PART  
NUMBER  
RANGE  
( C)  
IN4  
o
OUT  
5962R9674201TEC  
5962R9674201TXC  
HS1-508ARH-T  
HS9-508ARH-T  
-55 to 125  
-55 to 125  
NOTE: Minimum order quantity for -T is 150 units through  
distribution, or 450 units direct.  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
1
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.  
HS-508ARH-T  
Functional Diagram  
IN 1  
P
N
A0  
A1  
A2  
1
DIGITAL  
ADDRESS  
OUT  
8
EN  
N
P
IN 8  
ADDRESS INPUT  
BUFFER AND  
DECODERS  
MULTIPLEX  
SWITCHES  
LEVEL SHIFTER  
TRUTH TABLE  
A2  
X
L
A1  
X
L
A0  
X
L
EN  
L
‘‘ON’’ CHANNEL  
NONE  
H
H
H
H
H
H
H
H
1
2
3
4
5
6
7
8
L
L
H
L
L
H
H
L
L
H
L
H
H
H
H
L
H
L
H
H
H
2
HS-508ARH-T  
Die Characteristics  
DIE DIMENSIONS:  
PASSIVATION:  
Type: Silox (S O )  
(2108µm x 2743µm x 279µm ±25.4µm)  
83 x 108 x 11mils ±1mil  
i
2
Thickness: 8.0kÅ ±1.0kÅ  
METALLIZATION:  
Type: Al Si  
WORST CASE CURRENT DENSITY:  
2
6.68e4 A/cm  
Thickness: 12.5kÅ ±2kÅ  
TRANSISTOR COUNT:  
SUBSTRATE POTENTIAL:  
253  
Unbiased (DI)  
PROCESS:  
BACKSIDE FINISH:  
CMOS-DI  
Silicon  
Metallization Mask Layout  
HS-508ARH-T  
IN3  
IN4  
EN  
OUT  
A0  
A1  
IN8  
IN7  
A2  
IN6  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-  
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com  
3

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