HS-82C08RH_00 [INTERSIL]
Radiation Hardened 8-Bit Bus Transceiver; 抗辐射8位总线收发器![HS-82C08RH_00](http://pdffile.icpdf.com/pdf1/p00119/img/icpdf/HS-82C08RH_652183_icpdf.jpg)
型号: | HS-82C08RH_00 |
厂家: | ![]() |
描述: | Radiation Hardened 8-Bit Bus Transceiver |
文件: | 总4页 (文件大小:57K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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HS-82C08RH
TM
Data Sheet
August 2000
File Number 3040.3
Radiation Hardened 8-Bit Bus Transceiver
Features
The Intersil HS-82C08RH is a radiation-hardened octal bus
transceiver with three-state outputs. It is manufactured using
a self-aligned, junction isolated CMOS process and is
designed for use with the HS-80C08RH radiation-hardened
microprocessor. The HS-82C08RH allows asynchronous
two-way communication between data buses. The direction
of data flow is determined by the logic level on the
transmit/receive (T/R) input. A logic high on the T/R input
specifies data flow from Port A to Port B of the device.
Conversely, a logic low on the T/R input specifies data flow
from Port B to Port A. The Output Enable input disables both
ports by placing them in the high impedance state.
• Electrically Screened to SMD # 5962-95714
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Performance
- Total Dose. . . . . . . . . . . . . . . . . . . . . 100 krad(Si) (Max)
12
- Latch-Up Immune EPI-CMOS . . . . .>1 x 10 rad(Si)/s
• Bidirectional Three-State Input/Outputs
• Low Propagation Delay Time
• Low Power Consumption
• Single Power Supply . . . . . . . . . . . . . . . . . . . . . . . . . +5V
• Electrically Equivalent to Sandia SA2997
The HS-82C08RH is ideally suited for a wide variety of
buffering applications in radiation-hardened microcomputer
systems.
o
o
• Military Temperature Range . . . . . . . . . . . -55 C to 125 C
Ordering Information
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
INTERNAL
TEMP. RANGE
o
ORDERING NUMBER
5962R9571401QRC
5962R9571401QXC
5962R9571401VRC
5962R9571401VXC
MKT. NUMBER
( C)
HS1-82C08RH-8
HS9-82C08RH-8
HS1-82C08RH-Q
HS9-82C08RH-Q
-55 to 125
-55 to 125
-55 to 125
-55 to 125
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95714. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Functional Diagram
TRUTH TABLE
INPUTS
OPERATION
OUTPUT
ENABLE
TRANSMIT
/RECEIVE
A0
B0
PORT A PORT B
0
0
1
Out
In
In
A1
A2
A3
A4
A5
A6
A7
B1
B2
B3
B4
B5
B6
B7
0
1
Out
X
High Z
High Z
PORT
A
PORT
B
X = Don’t Care
T/R
OE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
1
HS-82C08RH
Pinouts
20 LEAD CERAMIC DUAL-IN-LINEMETAL-SEAL PACKAGE
(SBDIP) MIL-STD-1835, CDIP2-T20
TOP VIEW
20 LEAD CERAMIC METAL SEALFLATPACK PACKAGE
(FLATPACK) MIL-STD-1835, CDFP4-F20
TOP VIEW
1
2
3
4
5
6
7
8
9
V
A0
A1
A2
A3
A4
A5
A6
A7
OE
20
19
A0
A1
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
V
DD
DD
B0
B1
B2
B3
B4
B5
B6
B7
T/R
B0
A2
18 B1
17 B2
16 B3
15 B4
14 B5
13 B6
A3
A4
A5
A6
A7
OE
GND
12
B7
GND 10
11 T/R
PIN
DESCRIPTION
PIN
T/R
OE
DESCRIPTION
A0-A7
B0-B7
Local Bus Data I/O Pins
System Bus Data I/O Pins
Transmit/Receive Input
Active Low Output Enable
Logic Diagram
TSB
TSB
TSB
TSB
TSB
TSB
TSB
TSB
1
2
3
4
5
6
7
8
19
18
17
16
15
14
13
12
A0
A1
A2
A3
A4
A5
A6
A7
B0
B1
B2
B3
B4
B5
B6
B7
TSB
TSB
TSB
TSB
TSB
TSB
TSB
TSB
OE
9
B ENABLE
A ENABLE
T/R
11
NOTE: An Important caveat that is applicable to CMOS devices in general is that unused inputs should never be left floating. This rule applies to
inputs connected to a three-state bus. The need for external pull-up resistors during three-state bus conditions is eliminated by the presence of
regenerative latches on the following HS-82C08RH pins. A0-7 and B0-7 The functional block diagram depicts one of these pins with the regenerative
latch. When the CMOS driver assumes the high impedance state, the latch holds the bus in whatever logic state (high or low) it was before the three-
state condition. A transient drive current of ±1.5mA at V /2 ±0.5V for 10ns is required to switch the latch. Thus, CMOS device inputs connected to
DD
the bus are not allowed to float during three-state conditions.
2
HS-82C08RH
Switching Time Waveforms
t
t
f
r
V
V
DD
0V
INPUT
AN OR BN
0.5V
0.5V
DD
DD
PLH
DEVICE
UNDER
TEST
t
t
PHL
TEST POINTS
DD
0V
OUTPUT
BN OR AN
C
(NOTE)
0.5V
0.5V
L
DD
DD
t = t ≤ 20ns
r
f
10% TO 90%
NOTE: C includes stray and jig capacitance.
L
FIGURE 1. PORT TO PORT
FIGURE 2. AC TESTING LOAD CIRCUIT
V
DD
0V
t
t
t = t ≤ 20ns
r
f
r
f
INPUT OE
0.5V
0.5V
t
10% TO 90%
DD
DD
0.1V
DD
PORT
OUTPUT
PZH
V
OH
0.5V
0.5V
DD
DD
0V
DD
t
t
PHZ
PLZ
V
PORT
OUTPUT
V
OL
t
PZL
0.1V
DD
FIGURE 3. OE TO HIGH-IMPEDANCE, OE TO PORT OUTPUT
3
HS-82C08RH
Die Characteristics
DIE DIMENSIONS:
INTERFACE MATERIALS:
Glassivation:
Type: SiO
76.0 mils x 89.4 mils x 14 mils ±1 mil
2
Thickness: 8kÅ ±1kÅ
Top Metallization:
Type: Si - Al
Thickness: 11kÅ ±2kÅ
Metallization Mask Layout
HS-82C08RH
A1 (2)
A2 (3)
(18) B1
(17) B2
A3 (4)
A4 (5)
A5 (6)
A6 (7)
A7 (8)
(16) B3
(15) B4
(14) B5
(13) B6
(12) B7
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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