HCTS273MS [INTERSIL]
Radiation Hardened Octal D Flip-Flop; 抗辐射八路D型触发器
| 型号： | HCTS273MS |
| 厂家： | 
Intersil |
| 描述： | Radiation Hardened Octal D Flip-Flop |
| 文件： | 总10页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HCTS273MS
Radiation Hardened
Octal D Flip-Flop
September 1995
Features
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20, LEAD FINISH C
TOP VIEW
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-
Day (Typ)
1
2
3
4
5
6
7
8
9
VCC
Q7
MR
Q0
D0
D1
Q1
Q2
D2
D3
Q3
20
19
18 D7
17 D6
16 Q6
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s. 20ns Pulse
• Latch-Up Free Under Any Conditions
15
Q5
14 D5
13 D4
• Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
12
Q4
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
GND 10
11 CP
• LSTTL Input Compatibility
- VIL = 0.8V Max
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20, LEAD FINISH C
TOP VIEW
- VIH = VCC/2 Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH
MR
Q0
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
VCC
Q7
D7
D6
Q6
Q5
D5
D4
Q4
CP
Description
D0
The Intersil HCTS273MS is a Radiation Hardened octal D flip-
flop, positive edge triggered, with reset.
D1
Q1
The HCTS273MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
Q2
D2
D3
Q3
The HCTS273MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
GND
Ordering Information
PART NUMBER
HCTS273DMSR
TEMPERATURE RANGE
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
PACKAGE
o
o
-55 C to +125 C
20 Lead SBDIP
o
o
HCTS273KMSR
-55 C to +125 C
20 Lead Ceramic Flatpack
20 Lead SBDIP
o
HCTS273D/Sample
HCTS273K/Sample
HCTS273HMSR
+25 C
o
+25 C
Sample
20 Lead Ceramic Flatpack
Die
o
+25 C
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Spec Number 518642
File Number 2274.2
http://www.intersil.com | Copyright © Intersil Corporation 1999
1
HCTS273MS
Functional Diagram
D1
D0
D2
D3
D4
D5
D6
D7
8
7
13
14
3
4
18
17
11
CP
D
CL
D
R
D
R
D
R
D
R
D
R
D
R
D
Q
Q
CL
C
L
CL
R
R
1
MR
6
9
12
Q4
15
Q5
16
Q6
19
2
5
Q0
Q1
Q2
Q3
Q7
TRUTH TABLE
INPUTS
OUTPUT
RESET (MR)
CLOCK CP
DATA Dn
Q
L
L
H
H
H
X
X
H
L
H
L
L
X
Q0
NOTE: Q0 = The level of Q established by the last low to high transition of the clock
H = High Level
L = Low Level
X = Immaterial
= Transition from low to high
Spec Number 518642
2
Specifications HCTS273MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Thermal Resistance
θ
θ
JA
JC
o
o
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
SBDIP Package. . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . . 107 C/W 28 C/W
Maximum Package Power Dissipation at +125 C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
72 C/W
24 C/W
o
o
o
o
o
Storage Temperature Range (TSTG) . . . . . . . . . . . -65 C to +150 C
o
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265 C
o
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C
o
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/ C
o
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/ C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . .500ns Max Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
o
o
Operating Temperature Range (T ) . . . . . . . . . . . . -55 C to +125 C
A
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
LIMITS
(NOTE 1)
PARAMETER
SYMBOL
CONDITIONS
GROUPS
TEMPERATURE
MIN
MAX
UNITS
µA
o
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
2, 3
1
+25 C
-
40
o
o
+125 C, -55 C
-
750
µA
o
Output Current
(Sink)
IOL
IOH
VOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
+25 C
7.2
6.0
-7.2
-6.0
-
-
mA
mA
mA
mA
V
o
o
2, 3
1
+125 C, -55 C
-
-
o
Output Current
(Source)
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
+25 C
o
o
2, 3
1, 2, 3
+125 C, -55 C
-
o
o
o
Output Voltage Low
VCC = 4.5V, VIH = 2.25V,
+25 C, +125 C, -55 C
0.1
IOL = 50µA, VIL = 0.8V
o
o
o
VCC = 5.5V, VIH = 2.75V,
IOH = 50µA, VIL = 0.8V
1, 2, 3
1, 2, 3
1, 2, 3
+25 C, +125 C, -55 C
-
0.1
V
V
V
o
o
o
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOL = -50µA, VIL = 0.8V
+25 C, +125 C, -55 C
VCC
-0.1
-
-
o
o
o
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
+25 C, +125 C, -55 C
VCC
-0.1
o
Input Leakage
Current
IIN
FN
VCC = 5.5V, VIN = VCC or
GND
1
+25 C
-
-
-
±0.5
±5.0
-
µA
µA
-
o
o
2, 3
+125 C, -55 C
o
o
o
Noise Immunity
Functional Test
VCC = 4.5V, VIH =2.25V,
VIL =0.8V (Note 2)
7, 8A, 8B
+25 C, +125 C, -55 C
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
Spec Number 518642
3
Specifications HCTS273MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
LIMITS
(NOTES 1, 2)
A SUB-
PARAMETER
CP to Q
SYMBOL
CONDITIONS
GROUPS
TEMPERATURE
MIN
MAX
19
UNITS
ns
o
TPLH
VCC = 4.5V
9
+25 C
2
2
2
2
2
2
o
o
10, 11
9
+125 C, -55 C
22
ns
o
TPHL
TPHL
VCC = 4.5V
VCC = 4.5V
+25 C
23
ns
o
o
10, 11
9
+125 C, -55 C
27
ns
o
MR to Q
NOTES:
+25 C
25
ns
o
o
10, 11
+125 C, -55 C
29
ns
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
pF
o
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
+25 C
-
-
-
-
-
-
60
60
10
10
15
22
25
16
-
o
o
+125 C, -55 C
pF
o
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
VCC = 4.5V
+25 C
pF
o
o
+125 C, -55 C
pF
o
Output Transition
Time
TTHL
TTLH
+25 C
ns
o
o
+125 C, -55 C
ns
o
MaximumOperating
Frequency (CPU,
CPD)
FMAX
TSU
TH
VCC = 4.5V
+25 C
MHz
MHz
ns
o
o
+125 C, -55 C
o
Setup Time Data to
Clock
VCC = 4.5V
+25 C
12
18
3
o
o
+125 C, -55 C
-
ns
o
Hold Time Data to
Clock
VCC = 4.5V
+25 C
-
ns
o
o
+125 C, -55 C
3
-
ns
o
Pulse Width MRN
Pulse Width Clock
TW
VCC = 4.5V
+25 C
12
18
20
30
10
15
-
ns
o
o
+125 C, -55 C
-
ns
o
TW
VCC = 4.5V
+25 C
-
ns
o
o
+125 C, -55 C
-
ns
o
Removal Time MR
to Clock
TREM
VCC = 4.5V
+25 C
-
ns
o
o
+125 C, -55 C
-
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number 518642
4
Specifications HCTS273MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
(NOTES 1, 2)
PARAMETER
Quiescent Current
Output Current (Sink)
SYMBOL
ICC
CONDITIONS
TEMPERATURE
MIN
MAX
0.75
-
UNITS
mA
o
VCC = 5.5V, VIN = VCC or GND
+25 C
-
o
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25 C
6.0
mA
o
Output Current (Source)
Output Voltage Low
Output Voltage High
Input Leakage Current
IOH
VOL
VOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25 C
-6.0
-
-
0.1
-
mA
V
o
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50µA
+25 C
o
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOH = -50µA
+25 C
VCC
-0.1
V
o
IIN
FN
VCC = 5.5V, VIN = VCC or GND
+25 C
-
-
±5
µA
o
Noise Immunity
Functional Test
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,
(Note 3)
+25 C
-
-
o
CP to Q
TPLH
TPHL
TPHL
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
+25 C
2
2
2
22
27
29
ns
ns
ns
o
+25 C
o
MR to Q
NOTES:
+25 C
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
o
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25 C)
GROUP B
PARAMETER
SUBGROUP
DELTA LIMIT
12µA
ICC
5
5
IOL/IOH
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
GROUP A SUBGROUPS
CONFORMANCE GROUPS
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
Sample/5005
Sample/5005
READ AND RECORD
ICC, IOL/H
Initial Test (Preburn-In)
1, 7, 9
1, 7, 9
Interim Test I (Postburn-In)
Interim Test II (Postburn-In)
PDA
ICC, IOL/H
ICC, IOL/H
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
Interim Test III (Postburn-In)
PDA
ICC, IOL/H
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
Final Test
Group A (Note 1)
Group B
Subgroup B-5
Subgroup B-6
Subgroups 1, 2, 3, 9, 10, 11
Group D
NOTE:
1, 7, 9
1. Alternate Group A testing in accordance with method 5005 of MIL-STD-883 may be exercised.
Spec Number 518642
5
Specifications HCTS273MS
TABLE 7. TOTAL DOSE IRRADIATION
TEST
READ AND RECORD
CONFORMANCE
GROUPS
METHOD
PRE RAD
POST RAD
PRE RAD
1, 9
POST RAD
Group E Subgroup 2
NOTE:
5005
1, 7, 9
Table 4
Table 4 (Note 1)
1. Except FN test which will be performed 100% Go/No-Go.
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V ± 0.5V
VCC = 6V ± 0.5V
50kHz
25kHz
STATIC BURN-IN I TEST CONNECTIONS
2, 5, 6, 9, 12, 15,
16, 19
1, 3, 4, 7, 8, 10, 11,
13, 14, 17, 18
-
20
-
-
STATIC BURN-IN II TEST CONNECTIONS
2, 5, 6, 9, 12, 15,
16, 19
10
-
1, 3, 4, 7, 8, 11, 13,
14, 17, 18, 20
-
-
DYNAMIC BURN-IN TEST CONNECTIONS
10
-
2, 5, 6, 9, 12, 15,
16, 19
1, 20
11
3, 4, 7, 8, 13,
14, 17, 18
NOTES:
1. Each pin except VCC and GND will have a resistor of 10kΩ ± 5% for static burn-in
2. Each pin except VCC and GND will have a resistor of 680Ω ± 5% for dynamic burn-in
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V ± 0.5V
1, 3, 4, 7, 8 11, 13, 14, 17, 18, 20
2, 5, 6, 9, 12, 15, 16, 19
10
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 518642
6
HCTS273MS
Intersil Space Level Product Flow - ‘MS’
Wafer Lot Acceptance (All Lots) Method 5007
(Includes SEM)
100% Interim Electrical Test 1 (T1)
100% Delta Calculation (T0-T1)
GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Static Burn-In 2, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% Nondestructive Bond Pull, Method 2023
Sample - Wire Bond Pull Monitor, Method 2011
Sample - Die Shear Monitor, Method 2019 or 2027
100% Internal Visual Inspection, Method 2010, Condition A
100% Interim Electrical Test 2 (T2)
100% Delta Calculation (T0-T2)
100% PDA 1, Method 5004 (Notes 1and 2)
100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
Equivalent, Method 1015
100% Interim Electrical Test 3 (T3)
100% Delta Calculation (T0-T3)
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% PDA 2, Method 5004 (Note 2)
100% Final Electrical Test
100% PIND, Method 2020, Condition A
100% External Visual
100% Fine/Gross Leak, Method 1014
100% Radiographic, Method 2012 (Note 3)
100% External Visual, Method 2009
Sample - Group A, Method 5005 (Note 4)
100% Data Package Generation (Note 5)
100% Serialization
100% Initial Electrical Test (T0)
100% Static Burn-In 1, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
NOTES:
1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1.
2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the
failures from subgroup 7.
3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
5. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quan-
tity).
• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.
• X-Ray report and film. Includes penetrometer measurements.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Lot Serial Number Sheet (Good units serial number and lot number).
• Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.
Spec Number 518642
7
HCTS273MS
AC Timing Diagrams and Load Circuit
INPUT LEVEL
VS
VS
MR
TR
TF
TREM
INPUT LEVEL
CP
TW
90%
VS
CP
VS
VS
10%
10%
VS
TW
TPLH
t
PHL
Q
TPHL
Q
VS
VS
VS
FIGURE 1. CLOCK TO OUTPUT DELAYS AND CLOCK PULSE
WIDTH
FIGURE 2. MASTER RESET PULSE WIDTH. MASTER RESET
TO OUTPUT DELAY AND MASTER RESET TO
CLOCK RECOVERY TIME
INPUT
LEVEL
VS
VS
VS
VS
D
TH(L)
TH(H)
TTLH
TTHL
VOH
VOL
TSU(L)
TSU(H)
80%
80%
CP
20%
20%
OUTPUT
VS
VS
FIGURE 3. DATA SET-UP AND HOLD TIMES
FIGURE 4. OUTPUT TRANSITION TIME
AC VOLTAGE LEVELS
DUT
TEST
POINT
PARAMETER
VCC
HCTS
4.50
3.00
1.30
0
UNITS
V
V
V
V
V
CL
RL
VIH
VS
CL = 50pF
VIL
RL = 500Ω
GND
0
FIGURE 5. AC LOAD CIRCUIT
Spec Number 518642
8
HCTS273MS
Die Characteristics
DIE DIMENSIONS:
108 x 106 mils
METALLIZATION:
Type: AlSi
Metal Thickness: 11kÅ ± 1kÅ
GLASSIVATION:
Type: SiO2
Thickness: 13kÅ ± 2.6kÅ
WORST CASE CURRENT DENSITY:
<2.0 x 105A/cm2
BOND PAD SIZE:
100µm x 100µm
4 x 4 mils
Metallization Mask Layout
HCTS273MS
D0
(3)
Q0
(2)
MR
(1)
VCC
(20)
Q7
(19)
(18) D7
(17) D6
D1 (4)
Q1 (5)
(16) Q6
(15) Q5
Q2 (6)
D2 (7)
(14) D5
(8)
D3
(9)
Q3
(10)
GND
(11)
CP
(12)
Q4
(13)
D4
NOTE: The die diagram is a generic plot form a similar HCS device. It is intended to indicate approximate die size and bond pad location.
The mask series for the HCTS273 is TA14407.
Spec Number 518642
9
HCTS273MS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 727-9207
FAX: (407) 724-7240
Spec Number
10
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