TLE4946-2L [INFINEON]

High Precision Hall Effect Latch; 高精度霍尔效应锁存
TLE4946-2L
型号: TLE4946-2L
厂家: Infineon    Infineon
描述:

High Precision Hall Effect Latch
高精度霍尔效应锁存

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June 2008  
TLE4946-2L  
High Precision Hall Effect Latch  
TLE4946-2L  
Datasheet  
Rev 1.0  
Sensors  
Edition 2008-06  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© 2007 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or  
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any  
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties  
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights  
of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in  
question, please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written  
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure  
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support  
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may  
be endangered.  
TLE4946-2L  
TLE4946-2L High Precision Hall Effect Latch  
Revision History: 2008-06, Rev 1.0  
Previous Version:  
Page  
Subjects (major changes since last revision)  
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Datasheet  
3
Rev 1.0, 2008-06  
TLE4946-2L  
1
Product Description 5  
Overview 5  
1.1  
1.2  
1.3  
Features 5  
Target Applications 5  
2
Functional Description 5  
General 5  
2.1  
2.2  
2.3  
2.4  
2.5  
2.6  
Pin Configuration 6  
Pin Description 6  
Block Diagram 6  
Operating Modes and States 7  
Functional Block Description 7  
3
Specification 8  
3.1  
3.2  
3.3  
3.4  
Application Circuit 8  
Absolute Maximum Ratings 8  
Operating Range 9  
Characteristics 9  
4
4.1  
Package Information 10  
Package Outline 10  
Datasheet  
4
Rev 1.0, 2008-06  
High Precision Hall Effect Latch  
TLE4946-2L  
1
Product Description  
1.1  
Overview  
The TLE4946-2L is a high precision Hall effect latch  
with highly accurate switching thresholds for operating  
temperatures up to 150°C.  
1.2  
Features  
2.7 V to 18 V supply voltage operation  
Operation from unregulated power supply  
High sensitivity and high stability of the magnetic switching points  
High resistance to mechanical stress by active error compensation  
Reverse battery protection (Vs = -18V)  
Superior temperature stability  
Peak temperatures up to 195°C without damage  
Low jitter (typ. 1µs)  
High ESD performance (± 4 kV HBM)  
Digital output signal  
1.3  
Target Applications  
The TLE4946-2L is an integrated circuit Hall-effect sensor with low switching thresholds and low hysteresis. It is  
specially designed for high sensitivity applications and is ideally suited to detect the rotor position in a BLDC motor.  
Also for index counting with small pole wheels and large air gaps the sensor provides a reliable switching  
information.  
2
Functional Description  
2.1  
General  
Precise magnetic switching thresholds and high temperature stability are achieved by active compensation circuits  
and chopper techniques on chip. Offset voltages, generated by temperature induced stress or overmolding are  
canceled and high accuracy is achieved. The IC has an open collector output stage with 20mA current sink  
capability. A wide operating voltage range form 2.7V to 18V with reverse polarity protection up to -18V makes the  
device suitable for a wide range of applications. A magnetic south pole with field strength above Bop turns the  
output on and a magnetic north pole exceeding Brp turns it off.  
Product Name  
Product Type  
Ordering Code  
Package  
Hall Effect Latch  
TLE4946-2L  
SP000398352  
PG-SSO-3-2  
Datasheet  
5
Rev 1.0, 2008-06  
TLE4946-2L  
Functional Description  
2.2  
Pin Configuration  
± 0.1  
Center of  
2.08  
Sensitive Area  
± 0.1  
1.35  
1
2
3
PG-SSO-3-2  
Figure 1  
2.3  
Pin Configuration and sensitive area (Top View, Figure not to Scale)  
Pin Description  
Table 1  
Pin Description  
Pin or Ball Name  
No.  
Pin  
Type  
Function  
Comments  
1
2
3
Vs  
GND  
Q
I
O
O
Supply voltage  
Ground  
Output  
2.4  
Block Diagram  
VS  
Voltage Regulator  
reverse polarity protected  
Bias and  
Compensation  
Circuits  
Oscillator  
and  
Sequencer  
Q
Ref  
GND  
Low  
Pass  
Filter  
Comparator  
with  
Amplifier  
Chopped  
Hysteresis  
Hall Probe  
Figure 2  
TLE4946-2L Block Diagram  
Datasheet  
6
Rev 1.0, 2008-06  
TLE4946-2L  
Functional Description  
2.5  
Operating Modes and States  
Field Direction Definition:  
Positive magnetic fields are related with the south pole of the magnet to the branded side of package.  
Applied  
Magnetic  
Field  
BOP  
BRP  
td  
td  
tf  
tr  
VQ  
90%  
10%  
Figure 3  
Timing diagram  
VQ  
B
Brp  
0
Bop  
Figure 4  
Output Signal  
2.6  
Functional Block Description  
The chopped Hall IC switch comprises a Hall probe, bias generator, compensation circuits, oscillator and output  
transistor.  
The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the  
temperature behavior and reduce technology variations.  
The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall  
probe caused by molding and soldering processes and other thermal stresses in the package.  
This chopper technique together with the threshold generator and the comparator ensure high accurate magnetic  
switching points  
Datasheet  
7
Rev 1.0, 2008-06  
TLE4946-2L  
Specification  
3
Specification  
3.1  
Application Circuit  
Q
Q
GND  
GND  
VS  
200Ω  
VS  
Figure 5  
Application circuit  
It is recommended to use a serial resistor of 200in the supply line for current limitation in the case of a  
overvoltage pulse. Two capacitors of 4.7nF enhance the EMC performance. The pull-up resistor of 1.2klimits  
the current through the output transistor.  
3.2  
Absolute Maximum Ratings  
Table 2  
Parameter  
Absolute Maximum Ratings  
Symbol  
Values  
Typ.  
Unit  
Note/Test Condition  
Min.  
-40  
Max.  
150  
155  
Max. junction temperature  
Supply voltage  
TJ  
°C  
for 2000 h (not  
additive)  
-18  
-18  
-18  
165  
175  
195  
18  
24  
26  
for 1000 h (not additive  
for 168 h (not additive)  
for 3 x 1 h (additive)  
VDD  
V
for 1h, Rs 200Ω  
for 5min, Rs 200Ω  
Supply current through  
protection device  
Output voltage  
IS  
– 50  
+ 50  
mA  
V
VQ  
-0.7  
-0.7  
18  
26  
for 5min @ 1.2kpull  
up  
Storage temperature  
Magnetic flux density  
ESD robustness  
HBM: 1.5 k, 100 pF  
TS  
B
VESD,HBM  
– 40  
4
150  
unlimited mT  
kV  
°C  
According to  
EIA/JESD22-A114-B  
Datasheet  
8
Rev 1.0, 2008-06  
TLE4946-2L  
Specification  
Attention: Stresses above the max. values listed here may cause permanent damage to the device.  
Exposure to absolute maximum rating conditions for extended periods may affect device  
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may  
cause irreversible damage to the integrated circuit.  
3.3  
Operating Range  
The following operating conditions must not be exceeded in order to ensure correct operation of the TLE4946-2L.  
All parameters specified in the following sections refer to these operating conditions unless otherwise mentioned.  
Table 3  
Operating Range  
Parameter  
Symbol  
Values  
Typ.  
Unit  
Note/ Test Condition  
Min.  
2.7  
– 0.7  
– 40  
0
Max.  
18  
18  
150  
20  
Supply voltage  
Output voltage  
Junction temperature  
Output current  
VS  
VQ  
Tj  
V
V
°C  
mA  
IQ  
3.4  
Characteristics  
Product characteristics involve the spread of values guaranteed within the specified voltage and ambient  
temperature range. Typical characteristics are the median of the production (at Vs = 12V and TA= 25°C).  
Table 4  
Parameter  
Electrical Characteristics  
Symbol  
Values  
Typ.  
4
0.2  
0.3  
0.05  
0.02  
0.4  
320  
Unit  
Note/ Test Condition  
Min.  
2
0
0
Max.  
6
1
0.6  
10  
1
Supply current  
IS  
mA  
mA  
V
µA  
µs  
VS = 2.7 V ... 18 V  
VS = – 18 V  
IQ = 20 mA  
for VQ = 18 V  
RL = 1.2 k;  
CL = 50 pF  
Reverse current  
Output saturation voltage  
Output leakage current  
Output fall time  
ISR  
VQSAT  
IQLEAK  
tf  
Output rise time  
Chopper frequency  
Switching frequency  
Delay time 2)  
tr  
1
µs  
fOSC  
fSW  
td  
kHz  
kHz  
µs  
15 1)  
13  
Output jitter 3)  
tQJ  
1
µsRMS Typ. value for square  
wave signal 1 kHz  
Power-on time 4)  
tPON  
RthJA  
13  
190  
µs  
K/W  
VS 2.7 V  
PG-SSO-3-2  
Thermal resistance 5)  
1) To operate the sensor at the max. switching frequency, the value of the magnetic signal amplitude must be 1.4 times higher  
than for static fields.  
This is due to the - 3 dB corner frequency of the low pass filter in the signal path.  
2) Systematic delay between magnetic threshold reached and output switching  
3) Jitter is the unpredictable deviation of the output switching delay  
4) Time from applying V 2.7 V to the sensor until the output state is valid  
S
5) Thermal resistance from junction to ambient  
Datasheet  
9
Rev 1.0, 2008-06  
TLE4946-2L  
Package Information  
Table 5  
Parameter  
Magnetic Characteristics  
Symbol  
Values  
Typ.  
2.0  
-2.0  
4
Unit  
Note/ Test Condition  
Min.  
0.5  
Max.  
3.5  
Operate point  
Release point  
Hysteresis  
BOP  
BRP  
BHYS  
mT  
-3.5  
1.0  
-0.5  
6.0  
mT  
mT  
Magnetic Offset1)  
BOFF  
-1.5  
0
1.5  
mT  
Temperature compensation of  
magn. thresholds  
TC  
-350  
ppm/°C  
Repeatability of magnetic  
BREP  
20  
µTRMS  
thresholds 2)  
1) Boff = (Bop + Brp)/2  
2) BREP is equivalent to the noise constant  
4
Package Information  
4.1  
Package Outline  
d
Year (y) = 0...9  
Branded Side  
Calendar Week (ww) = 01...52  
Hall-Probe  
d : Distance chip to upper side of IC  
±0.08  
PG-SSO-3-2 : 0.57  
mm  
AEA03644  
AEA02510-1  
Figure 6  
Marking of TLE4946-2L and Distance of chip to upper side of IC  
Datasheet  
10  
Rev 1.0, 2008-06  
TLE4946-2L  
Package Information  
±0.1  
0.8  
x 45˚  
7˚  
±0.05  
±0.08  
4.16  
4.06  
0.2  
2
A
1.9 MAX.  
±0.05  
1.52  
(0.79)  
0.6 MAX.  
0.2+0.1  
±0.05  
0.4  
1
2
3
±0.25  
±1  
1.27  
±0.25  
1.27  
12.7  
Adhesive  
Tape  
A
Tape  
±0.4  
±0.3  
4
0.25-0.15  
6.35  
±0.1  
±0.3  
0.39  
12.7  
Total tolerance at 10 pitches ±1  
1) No solder function area  
GPO05358  
Figure 7  
Package outline  
Datasheet  
11  
Rev 1.0, 2008-06  
w w w . i n f i n e o n . c o m  
Published by Infineon Technologies AG  

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