SPI80N10L [INFINEON]
SIPMOS Power-Transistor; SIPMOS功率三极管
| 型号： | SPI80N10L |
| 厂家： | 
Infineon |
| 描述： | SIPMOS Power-Transistor |
| 文件： | 总8页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary data
SPI80N10L
SPP80N10L,SPB80N10L
SIPMOS Power-Transistor
Feature
Product Summary
V
100
14
V
m
A
DS
N-Channel
R
DS(on)
Enhancement mode
Logic Level
I
80
D
P-TO262-3-1
P-TO263-3-2
P-TO220-3-1
175°C operating temperature
Avalanche rated
dv/dt rated
Type
Package
Ordering Code
Q67042-S4173
Q67042-S4171
Q67042-S4172
Marking
80N10L
80N10L
80N10L
SPP80N10L
SPB80N10L
SPI80N10L
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Maximum Ratings, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T =25°C
80
58
C
T =100°C
C
320
Pulsed drain current
I
D puls
T =25°C
C
700
mJ
Avalanche energy, single pulse
E
AS
I =80 A , V =25V, R =25
D
DD
GS
E
25
6
Avalanche energy, periodic limited by T
Reverse diode dv/dt
AR
jmax
dv/dt
kV/µs
I =80A, V =0V, di/dt=200A/µs
S
DS
Gate source voltage
Power dissipation
V
V
±20
250
GS
P
W
tot
T =25°C
C
°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T , T
-55... +175
55/175/56
j
stg
Page 1
2002-08-14
Preliminary data
SPI80N10L
SPP80N10L,SPB80N10L
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
R
-
-
-
-
0.6 K/W
62.5
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
thJC
R
thJA
R
thJA
-
-
-
-
62
40
2
@ 6 cm cooling area 1)
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
100
1.2
typ. max.
Static Characteristics
V
-
-
V
Drain-source breakdown voltage
(BR)DSS
V
=0V, I =2mA
D
GS
1.6
2
Gate threshold voltage, V = V
V
GS(th)
GS
DS
I = 2 mA
D
µA
Zero gate voltage drain current
I
DSS
V
=100V, V =0V, T =25°C
GS
-
-
-
0.1
-
1
DS
j
V
=100V, V =0V, T =150°C
GS
100
DS
j
10
100 nA
Gate-source leakage current
I
GSS
V
=20V, V =0V
DS
GS
-
-
15
11
24
14
Drain-source on-state resistance
R
m
DS(on)
V
=4.5V, I =58A
D
GS
Drain-source on-state resistance
R
DS(on)
V
=10V, I =58A
D
GS
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2002-08-14
Preliminary data
SPI80N10L
SPP80N10L,SPB80N10L
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I *R
DS(on)max
,
26
52
-
S
D
I =58A
D
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
V
=0V, V =25V,
DS
-
-
-
-
-
-
-
3630 4540 pF
iss
GS
f=1MHz
C
640
345
14
800
430
21
oss
C
rss
t
V
=50V, V =10V,
GS
ns
d(on)
DD
I =80A, R =1.6
t
60
90
D
G
r
Turn-off delay time
Fall time
t
82
123
30
d(off)
t
20
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
Q
Q
V
=80V, I =80A
-
-
-
14
65
21
98
nC
gs
gd
g
DD
D
V
=80V, I =80A,
160
240
Gate charge total
DD
D
V
=0 to 10V
GS
V
=80V, I =80A
-
-
4.2
-
-
V
A
Gate plateau voltage
V
DD
D
(plateau)
Reverse Diode
T =25°C
80
Inverse diode continuous
forward current
I
S
C
I
-
-
-
-
-
320
1.3
Inv. diode direct current, pulsed
SM
V
=0V, I =80A
0.9
95
V
Inverse diode forward voltage V
GS
F
SD
Reverse recovery time
t
V =50V, I =l ,
140 ns
500 nC
rr
R
F S
di /dt=100A/µs
Reverse recovery charge
Q
330
rr
F
Page 3
2002-08-14
Preliminary data
SPI80N10L
SPP80N10L,SPB80N10L
1 Power dissipation
= f (T )
2 Drain current
I = f (T )
P
tot
C
D
C
parameter: V
10 V
GS
SPP80N10L
SPP80N10L
90
280
W
A
240
220
200
180
160
140
120
100
80
70
60
50
40
30
20
10
0
60
40
20
0
0
20 40 60 80 100 120 140 160
190
0
20 40 60 80 100 120 140 160
190
°C
°C
T
T
C
C
3 Safe operating area
I = f ( V
4 Max. transient thermal impedance
Z = f (t )
thJC
)
D
DS
p
parameter : D = 0 , T = 25 °C
parameter : D = t /T
C
p
10 3
SPP80N10L
SPP80N10L
10 1
K/W
t
= 15.0µs
A
p
10 0
10 2
10 -1
10 -2
10 -3
100 µs
D = 0.50
0.20
10 1
0.10
1 ms
0.05
0.02
10 ms
10 -4
single pulse
0.01
DC
10 0
10 -1
10 -5
10 0
10 1
10 2
10 3
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
V
s
t
V
DS
p
Page 4
2002-08-14
Preliminary data
SPI80N10L
SPP80N10L,SPB80N10L
5 Typ. output characteristic
I = f (V ); T =25°C
6 Typ. drain-source on resistance
= f (I )
R
D
DS
j
DS(on)
D
parameter: t = 80 µs
parameter: V
GS
p
SPP80N10L
Ptot = 250W
SPP80N10L
190
80
b
c
d
e
A
m
h
j
i
l
f
g
V
[V]
k
GS
a
160
140
120
100
80
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
8.0
e
b
c
d
e
f
60
50
40
30
20
10
0
d
g
h
i
c
j
k
l
60
10.0
40
f
b
g
k
h
j
i
V
[V] =
c
l
l
GS
b
20
d
e
f
g
h
i
j
k
3.0 3.5 4.0 4.5 5.0
5.5 6.0 6.5 7.0
8.0 10.0
a
0
0
1
2
3
4
6
0
20
40
60
80 100 120 140
170
V
A
D
I
V
DS
7 Typ. transfer characteristics
I = f ( V ); V 2 x I x R
8 Typ. forward transconductance
g = f(I ); T =25°C
D
GS
DS
D
DS(on)max
fs
D
j
parameter: t = 80 µs
parameter: g
p
fs
60
70
A
S
60
55
50
45
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
0
0
V
A
0
0.5
1
1.5
2
2.5
3
3.5
4
5
0
10
20
30
40
60
I
V
GS
D
Page 5
2002-08-14
Preliminary data
SPI80N10L
SPP80N10L,SPB80N10L
9 Drain-source on-state resistance
= f (T )
10 Typ. gate threshold voltage
V = f (T )
GS(th)
R
DS(on)
j
j
parameter : I = 58 A, V = 4.5 V
parameter: V = V
GS DS
D
GS
SPP80N10L
3
110
m
V
90
80
70
60
50
40
30
20
10
0
2
1.5
1
Id=2mA
Id=250uA
98%
0.5
typ
0
°C
-60
-20
20
60
100
140
200
-60 -30
0
30
60
90 120
180
°C
T
T
j
j
11 Typ. capacitances
C = f (V )
12 Forward character. of reverse diode
I = f (V )
DS
F
SD
parameter: V =0V, f=1 MHz
parameter: T , tp = 80 µs
GS
j
10 4
10 3
SPP80N10L
A
pF
C
iss
10 2
10 3
C
C
oss
rss
10 1
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 2
10 0
V
0
5
10
15
20
25
30
40
0
0.4
0.8
1.2
1.6
2
2.4
3
V
V
V
DS
SD
Page 6
2002-08-14
Preliminary data
SPI80N10L
SPP80N10L,SPB80N10L
13 Typ. avalanche energy
= f (T )
14 Typ. gate charge
= f (Q
E
V
)
Gate
AS
j
GS
par.: I = 80 A , V = 25 V, R = 25
parameter: I = 80 A pulsed
D
DD
GS
D
SPP80N10L
16
700
mJ
V
600
550
500
450
400
350
300
250
200
150
100
50
12
V
0,2
10
8
DS max
0,8 VDS max
6
4
2
0
0
25
45
65
85 105 125 145
185
0
40
80
120
160
200
260
°C
nC
T
Q
j
Gate
15 Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
SPP80N10L
120
V
114
112
110
108
106
104
102
100
98
96
94
92
90
-60
-20
20
60
100
140
200
°C
T
j
Page 7
2002-08-14
Preliminary data
SPI80N10L
SPP80N10L,SPB80N10L
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BSPP80N10L, BSPB80N10L and BSPI80N10L, for
simplicity the device is referred to by the term SPP80N10L, SPB80N10L and SPI80N10L
throughout this documentation
Page 8
2002-08-14
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