SPD07N20G [INFINEON]
SIPMOSÃ Power Transistor Features N channel Enhancement mode Avalanche rated; SIPMOSÃ ？功率晶体管特点N沟道增强模式额定雪崩
| 型号： | SPD07N20G |
| 厂家： | 
Infineon |
| 描述： | SIPMOSÃ Power Transistor Features N channel Enhancement mode Avalanche rated |
| 文件： | 总10页 (文件大小：658K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD 07N20 G
SIPMOS Power Transistor
Product Summary
Features
Drain source voltage
200
0.4
7
V
Ω
A
V
DS
• N channel
Drain-Source on-state resistance
Continuous drain current
R
DS(on)
• Enhancement mode
I
D
• Avalanche rated
• dv/dt rated
Pin 1 Pin 2 Pin 3
Type
Package
Pb-free
Yes
Packaging
Tape and Reel
Tube
G
D
S
SPD07N20 G
SPU07N20 G
PG-TO252
PG-TO251
Yes
Maximum Ratings, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
Continuous drain current
A
I
D
T = 25 ˚C
7
C
T = 100 ˚C
4.5
C
Pulsed drain current
28
IDpulse
T = 25 ˚C
C
Avalanche energy, single pulse
120
mJ
E
E
AS
I = 7 A, V = 50 V, R = 25 Ω
D
DD
GS
4
6
Avalanche energy, periodic limited by T
Reverse diode dv/dt
jmax
AR
kV/µs
dv/dt
I = 7 A, V = 160 V, di/dt = 200 A/µs,
S
DS
T
= 175 ˚C
jmax
Gate source voltage
Power dissipation
V
V
P
±20
GS
40
W
tot
T = 25 ˚C
C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55... +175
55/150/56
˚C
T , T
j
stg
Rev. 2.4
Page 1
2008-09-01
SPD 07N20 G
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
SMD version, device on PCB:
@ min. footprint
-
-
3.1 K/W
100
R
thJC
-
R
thJA
R
thJA
-
-
-
75
50
2
1)
@ 6 cm cooling area
-
Electrical Characteristics, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
200
2.1
typ. max.
Static Characteristics
Drain- source breakdown voltage
-
-
V
V
V
(BR)DSS
V
= 0 V, I = 0.25 mA
D
GS
3
4
Gate threshold voltage, V = V
GS
DS
GS(th)
I = 1 mA
D
Zero gate voltage drain current
µA
I
DSS
V
V
= 200 V, V = 0 V, T = 25 ˚C
-
-
0.1
-
1
DS
DS
GS
j
= 200 V, V = 0 V, T = 125 ˚C
100
GS
j
Gate-source leakage current
= 20 V, V = 0 V
-
10
100 nA
I
GSS
V
GS
DS
Drain-Source on-state resistance
R
Ω
DS(on)
V
= 10 V, I = 4.5 A
D
-
0.3
0.4
GS
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev. 2.4
Page 2
2008-09-01
SPD 07N20 G
Electrical Characteristics, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
min.
Dynamic Characteristics
Transconductance
3
-
4.2
400
85
-
S
g
fs
V
≥2*I *R
, I = 4.5 A
DS(on)max D
DS
D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
530
130
70
pF
C
C
C
iss
V
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
-
oss
rss
V
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
-
45
V
GS
DS
Turn-on delay time
= 30 V, V = 10 V, I = 3 A,
-
10
15
ns
t
d(on)
V
DD
GS
D
R = 50 Ω
G
Rise time
-
-
-
40
55
30
60
75
40
t
r
V
= 30 V, V = 10 V, I = 3 A,
GS D
DD
R = 50 Ω
G
Turn-off delay time
= 30 V, V = 10 V, I = 3 A,
t
d(off)
V
DD
GS
D
R = 50 Ω
G
Fall time
t
f
V
= 30 V, V = 10 V, I = 3 A,
GS D
DD
R = 50 Ω
G
Rev. 2.4
Page 3
2008-09-01
SPD 07N20 G
Electrical Characteristics, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
min.
Dynamic Characteristics
Gate to source charge
5
10
21
7
7.5 nC
-
-
-
-
Q
Q
gs
V
= 160 V, I = 7 A
D
DD
Gate to drain charge
= 160 V, I = 7 A
22.5
31.5
-
gd
V
DD
D
Gate charge total
= 160 V, I = 7 A, V = 0 to 10 V
Q
g
V
DD
D
GS
Gate plateau voltage
= 160 V, I = 7 A
V
V
(plateau)
V
DD
D
Reverse Diode
Inverse diode continuous forward current
-
-
-
-
-
-
7
A
V
I
S
T = 25 ˚C
C
Inverse diode direct current,pulsed
-
28
1.7
I
SM
T = 25 ˚C
C
Inverse diode forward voltage
1.3
200
0.6
V
SD
V
= 0 V, I = 14 A
F
GS
Reverse recovery time
V = 100 V, I =I , di /dt = 100 A/µs
300 ns
t
rr
R
F
S
F
Reverse recovery charge
µC
0.9
Q
rr
V = 100 V, I =l , di /dt = 100 A/µs
R
F S
F
Rev. 2.4
Page 4
2008-09-01
SPD 07N20 G
Power Dissipation
Drain current
P
= f (T )
C
I = f (T )
tot
D
C
parameter: V ≥ 10 V
GS
SPD07N20
SPD07N20
45
7.5
A
W
6.0
5.5
5.0
35
30
25
20
15
10
5
4.5
P
I
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
˚C
0
20
40
60
80 100 120
160
˚C
0
20
40
60
80 100 120
160
T
T
C
C
Transient thermal impedance
= f (t )
Safe operating area
I = f (V
Z
)
DS
thJC
p
D
parameter : D = t /T
parameter : D = 0 , T = 25 ˚C
p
C
SPD07N20
10 1
SPD07N20
10 2
K/W
A
= 22.0µs
100 µs
t
p
I
10 0
V
10 1
R
Z
I
10 -1
1 ms
D = 0.50
0.20
10 0
0.10
10 ms
0.05
10 -2
0.02
0.01
single pulse
DC
10 2
10 -3
10 -1
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 0
10 1
10 3
s
V
t
V
p
DS
Rev. 2.4
Page 5
2008-09-01
SPD 07N20 G
Typ. output characteristics
I = f (V
Typ. drain-source-on-resistance
= f (I )
)
DS
D
R
DS(on)
D
parameter: t = 80 µs
p
parameter: V
SPD07N20
GS
17
SPD07N20
P
tot = 40W
1.3
A
Ω
a
b
c
l
e
d
j
i
k
h
f
g
V
[V]
GS
a
14
1.1
1.0
0.9
4.0
4.5
b
c
d
e
f
12
10
8
5.0
5.5
6.0
e
I
0.8
6.5
R
g
h
i
7.0
0.7
0.6
0.5
0.4
0.3
0.2
7.5
d
8.0
j
9.0
6
k
l
10.0
20.0
c
a
4
f
g
k
h
b
j
l
i
2
V
[V] =
GS
a
b
c
d
e
6.0
f
0.1
0.0
g
7.0
h
7.5
k
l
i
j
4.0 4.5
5.0 5.5
6.5
10.0
20.0
8.0 9.0
0
V
0
2
4
6
8
11
A
0
2
4
6
8
12
V
DS
I
D
Typ. forward transconductance
Typ. transfer characteristics I = f (V
)
GS
D
g = f(I ); T = 25˚C
parameter: t = 80 µs
fs
D
j
p
parameter: g
V
≥ 2 x I x R
fs
DS
D
DS(on) max
13
A
6
11
10
9
S
4
8
I
g
7
3
2
1
0
6
5
4
3
2
1
0
V
0
1
2
3
4
5
6
7
8
10
0
2
4
A
10 12 14 16 18
21
6
8
V
GS
I
D
Rev. 2.4
Page 6
2008-09-01
SPD 07N20 G
Gate threshold voltage
= f (T )
Drain-source on-resistance
= f (T )
V
GS(th)
j
R
DS(on)
j
parameter : V = V , I = 1 mA
GS
DS D
parameter : I = 4.5 A, V = 10 V
D
GS
SPD07N20
5.0
V
1.8
Ω
4.4
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
max
V
R
typ
98%
typ
min
˚C
-60
-20
20
60
100
160
˚C
-60
-20
20
60
100
140
200
T
j
T
j
Typ. capacitances
C = f (V
Forward characteristics of reverse diode
I = f (V
)
)
SD
DS
F
parameter: V = 0 V, f = 1 MHz
parameter: T , t = 80 µs
GS
j
p
10 4
SPD07N20
10 2
pF
A
10 3
10 2
10 1
10 1
10 0
10 -1
I
C
iss
C
C
oss
rss
Tj = 25 ˚C typ
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
V
0
5
10
15
20
25
30
40
V
0.0
0.4
0.8
1.2
1.6
2.0
2.4
3.0
V
DS
V
SD
Rev. 2.4
Page 7
2008-09-01
SPD 07N20 G
Typ. gate charge
Avalanche Energy E = f (T )
AS
j
V
= f (Q
)
parameter: I = 7 A, V = 50 V
GS
Gate
D
DD
parameter: I
= 7 A
R
= 25 Ω
D puls
GS
SPD07N20
16
130
mJ
V
110
100
90
80
70
60
50
40
30
20
10
0
12
10
8
V
V
DS max
0,2
0,8
DS max
V
E
6
4
2
0
0
4
8
12
16
20
24
28 nC
34
˚C
20
40
60
80
100
120
160
T
Q
Gate
j
Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
SPD07N20
245
V
235
230
225
220
215
210
205
200
195
190
185
180
V
˚C
-60
-20
20
60
100
180
T
j
Rev. 2.4
Page 8
2008-09-01
SPD 07N20 G
Package outline: PG-TO252-3
Rev. 2.4
Page 9
2008-09-01
SPD 07N20 G
Rev. 2.4
Page 10
2008-09-01
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