SPD07N60C3 [INFINEON]
Cool MOS™ Power Transistor; 酷MOS ™功率晶体管
| 型号： | SPD07N60C3 |
| 厂家： | 
Infineon |
| 描述： | Cool MOS™ Power Transistor |
| 文件： | 总12页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD07N60C3
SPU07N60C3
Final data
Cool MOS™ Power Transistor
V
@ T
650
0.6
7.3
V
Ω
A
DS
jmax
Feature
R
DS(on)
• New revolutionary high voltage technology
• Worldwide best R in TO-251 and TO-252
I
D
P-TO251-3-1
P-TO252-3-1
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
Type
Package
Ordering Code
Marking
SPD07N60C3
P-TO252-3-1 Q67040-S4423
07N60C3
SPU07N60C3
P-TO251-3-1
-
07N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T = 25 °C
7.3
4.6
C
T = 100 °C
C
21.9
230
Pulsed drain current, t limited by T
Avalanche energy, single pulse
I
E
p
jmax
D puls
mJ
AS
I = 5.5 A, V = 50 V
Avalanche energy, repetitive t limited by T
D
DD
jmax
E
0.5
AR
AR
I = 7.3 A, V = 50 V
D
DD
7.3
6
A
V/ns
Avalanche current, repetitive t limited by T
Reverse diode dv/dt
I
jmax AR
AR
dv/dt
I =7.3A, V =480V, T =125°C
S
DS
Gate source voltage static
V
V
P
V
±20
±30
83
GS
GS
tot
Gate source voltage AC (f >1Hz)
Power dissipation, T = 25°C
Operating and storage temperature
W
°C
C
T , T
-55... +150
j
stg
Page 1
2003-09-16
SPD07N60C3
SPU07N60C3
Final data
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
50
V/ns
V
= 480 V, I = 7.3 A, T = 125 °C
DS
D j
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
-
-
1.5 K/W
Thermal resistance, junction - case
thJC
R
-
-
75
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
thJA
R
thJA
-
-
-
-
75
50
2
2)
@ 6 cm cooling area
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T
-
-
260 °C
sold
3)
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
600
-
typ. max.
V
V
=0V, I =0.25mA
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =7.3A
GS
700
-
V
D
(BR)DS
I =350µΑ, V =V
2.1
3
3.9
Gate threshold voltage
Zero gate voltage drain current
V
I
D
GS DS
GS(th)
V
=600V, V =0V,
DS GS
µA
DSS
T =25°C,
-
-
-
0.5
-
-
1
100
100 nA
j
T =150°C
j
V
V
=30V, V =0V
Gate-source leakage current
I
GS
DS
GSS
=10V, I =4.6A,
GS
Drain-source on-state resistance R
Ω
D
DS(on)
T =25°C
-
-
-
0.54
1.46
0.8
0.6
-
-
j
T =150°C
j
R
f=1MHz, open Drain
Gate input resistance
G
Page 2
2003-09-16
SPD07N60C3
SPU07N60C3
Final data
Electrical Characteristics , at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
S
min.
Transconductance
g
V
≥2*I *R
DS(on)max
,
-
6
-
fs
DS
D
I =4.6A
D
Input capacitance
C
V
=0V, V =25V,
GS DS
-
-
-
-
790
260
16
-
-
-
-
pF
iss
f=1MHz
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
4)
V
V
=0V,
GS
Effective output capacitance,
energy related
Effective output capacitance,
time related
C
30
pF
ns
o(er)
=0V to 480V
DS
5)
C
-
55
-
o(tr)
Turn-on delay time
t
V
=380V, V =0/13V,
-
-
-
-
6
3.5
60
7
-
-
d(on)
DD
GS
I =7.3A, R =12Ω,
Rise time
t
D
G
r
T =125°C
Turn-off delay time
Fall time
t
100
15
j
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
Q
Q
V
=480V, I =7.3A
-
-
-
3
9.2
21
-
-
27
nC
V
gs
DD
D
gd
V
V
=480V, I =7.3A,
Gate charge total
DD
D
g
=0 to 10V
GS
V
=480V, I =7.3A
-
5.5
-
Gate plateau voltage
V(plateau)
DD
D
1
2
Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3
4
Soldering temperature for TO-263: 220°C, reflow
Co(er) is a fixed capacitance that gives the same stored energy asCoss while VDS is rising from 0 to 80% VDSS
.
5
Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Page 3
2003-09-16
SPD07N60C3
SPU07N60C3
Final data
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T =25°C
-
-
7.3
21.9
1.2
600 ns
-
-
A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
I
-
-
SM
pulsed
V
=0V, I =I
F S
-
-
-
-
-
1
400
4
28
-
V
Inverse diode forward voltage
Reverse recovery time
V
t
GS
SD
V =480V, I =I ,
rr
R
F S
di /dt=100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
µC
A
F
rr
I
rrm
800 A/µs
Peak rate of fall of reverse
recovery current
di /dt
rr
Typical Transient Thermal Characteristics
Symbol
Value
typ.
Unit
Symbol
Value
typ.
Unit
Thermal resistance
Thermal capacitance
0.024
0.046
0.085
0.308
0.317
0.112
K/W
0.00012
0.0004578
0.000645
0.001867
0.004795
0.045
R
R
R
R
Rth5
R
C
C
C
C
C
C
Ws/K
th1
th2
th3
th4
th1
th2
th3
th4
th5
th6
th6
External Heatsink
Tj
Rth1
Rth,n
Tcase
Ptot (t)
Cth1
Cth2
Cth,n
Tamb
Page 4
2003-09-16
SPD07N60C3
SPU07N60C3
Final data
1 Power dissipation
= f (T )
2 Safe operating area
I = f ( V
P
)
DS
tot
C
D
parameter : D = 0 , T =25°C
C
10 2
SPD07N60C3
100
W
A
80
70
60
50
40
30
20
10
0
10 1
10 0
tp = 0.001 ms
tp = 0.01 ms
10 -1
tp = 0.1 ms
tp = 1 ms
DC
10 -2
0
20
40
60
80 100 120
160
10 0
10 1
10 2
10 3
°C
T
V
V
DS
C
3 Transient thermal impedance
= f (t )
4 Typ. output characteristic
I = f (V ); T =25°C
Z
thJC
p
D
DS
j
parameter: D = t /T
parameter: t = 10 µs, V
p
p
GS
10 1
24
K/W
20V
10V
A
7V
8V
10 0
10 -1
10 -2
10 -3
6,5V
6V
16
12
8
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
5,5V
single pulse
5V
4
4,5V
0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -1
0
5
10
15
25
s
V
DS
t
V
p
Page 5
2003-09-16
SPD07N60C3
SPU07N60C3
Final data
5 Typ. output characteristic
I = f (V ); T =150°C
6 Typ. drain-source on resistance
=f(I )
R
D
DS
j
DS(on)
D
parameter: t = 10 µs, V
parameter: T =150°C, V
p
GS
j
GS
10
13
A
4V
Ω
20V
8V
11
6.5V
4.5V
8
6V
10
9
8
7
6
5
4
3
2
1
0
7
5V
6
5.5V
6V
5
6.5V
8V
5.5V
4
3
2
1
0
20V
5V
4.5V
4V
0
2
4
6
8
10 12 14 16 18 20 22
25
0
2
4
6
8
10
12
15
V
DS
A
I
V
D
7 Drain-source on-state resistance
= f (T )
8 Typ. transfer characteristics
R
I = f ( V ); V ≥ 2 x I x R
DS(on)
j
D GS DS D DS(on)max
parameter : I = 4.6 A, V = 10 V
parameter: t = 10 µs
D
GS
p
SPD07N60C3
3.4
24
A
Ω
25°C
20
18
16
14
12
10
8
2.8
2.4
2
150°C
1.6
1.2
0.8
0.4
0
6
98%
typ
4
2
0
°C
-60
-20
20
60
100
180
0
2
4
6
8
10 12 14 16
20
V
V
T
GS
j
Page 6
2003-09-16
SPD07N60C3
SPU07N60C3
Final data
9 Typ. gate charge
= f (Q
10 Forward characteristics of body diode
I = f (V
V
)
)
SD
GS
Gate
F
parameter: I = 7.3 A pulsed
parameter: T , tp = 10 µs
D
10 2
SPD07N60C3
SPD07N60C3
16
V
A
12
10 1
0.2 VDS max
10
0.8 VDS max
8
6
4
2
0
10 0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -1
nC
0
4
8
12
16
20
24
28
34
0
0.4
0.8
1.2
1.6
2
2.4
3
V
Q
V
Gate
SD
11 Typ. drain current slope
di/dt = f(R ), inductive load, T = 125°C
12 Typ. switching time
t = f (R ), inductive load, T =125°C
G
j
G
j
par.: V =380V, V =0/+13V, I =7.3A
par.: V =380V, V =0/+13V, I =7.3 A
DS
GS
D
DS
GS
D
500
3000
ns
A/µs
400
350
300
250
200
150
100
50
2000
1500
1000
500
0
td(off)
di/dt(on)
td(on)
tf
tr
di/dt(off)
20
0
0
40
60
80
100
130
0
20
40
60
80
100
130
Ω
Ω
R
R
G
G
Page 7
2003-09-16
SPD07N60C3
SPU07N60C3
Final data
13 Typ. switching time
t = f (I ), inductive load, T =125°C
14 Typ. drain source voltage slope
dv/dt = f(R ), inductive load, T = 125°C
D
j
G
j
par.: V =380V, V =0/+13V, R =12Ω
par.: V =380V, V =0/+13V, I =7.3A
DS
GS
G
DS
GS
D
100000
90
V/ns
ns
td(off)
80000
70000
60000
50000
40000
30000
20000
10000
0
70
60
50
40
30
20
10
0
tf
dv/dt(on)
td(on)
tr
dv/dt(off)
40
0
1
2
3
4
5
6
8
0
20
60
80
100
130
A
Ω
I
R
D
G
15 Typ. switching losses
E = f (I ), inductive load, T =125°C
16 Typ. switching losses
E = f(R ), inductive load, T =125°C
D
j
G
j
par.: V =380V, V =0/+13V, R =12Ω
par.: V =380V, V =0/+13V, I =7.3A
DS
GS
G
DS
GS
D
0.025
0.2
*) E includes SDP06S60
on
*) E includes SDP06S60
on
mWs
diode commutation losses.
diode commutation losses.
mWs
0.16
0.14
0.12
0.1
0.015
0.01
0.005
0
Eoff
Eoff
0.08
0.06
0.04
0.02
0
Eon*
Eon*
0
1
2
3
4
5
6
8
0
20
40
60
80
100
130
A
Ω
I
R
D
G
Page 8
2003-09-16
SPD07N60C3
SPU07N60C3
Final data
17 Avalanche SOA
= f (t
18 Avalanche energy
E = f (T )
AS
I
)
AR
AR
j
par.: T ≤ 150 °C
par.: I = 5.5 A, V = 50 V
j
D
DD
260
mJ
8
A
220
200
180
160
140
120
100
80
T
=25°C
j(START)
6
5
T
=125°C
j(START)
4
3
2
1
0
60
40
20
0
10 -3 10 -2 10 -1 10 0 10 1 10 2
10 4
20
40
60
80
100
120
160
°C
µs
AR
t
T
j
19 Drain-source breakdown voltage
= f (T )
20 Avalanche power losses
P = f (f )
AR
V
(BR)DSS
j
parameter: E =0.5mJ
AR
SPD07N60C3
500
720
V
W
680
660
640
620
600
580
560
540
300
200
100
0
10 4
-60
-20
20
60
100
180
10 5
10 6
°C
MHz
T
f
j
Page 9
2003-09-16
SPD07N60C3
SPU07N60C3
Final data
22 Typ. C
21 Typ. capacitances
C = f (V
stored energy
oss
)
E
=f(V
)
DS
oss
DS
parameter: V =0V, f=1 MHz
GS
10 4
5.5
µJ
pF
Ciss
4.5
10 3
4
3.5
3
10 2
2.5
2
Coss
10 1
1.5
1
Crss
0.5
0
10 0
0
100
200
300
400
600
DS
0
100
200
300
400
600
DS
V
V
V
V
Definition of diodes switching characteristics
Page 10
2003-09-16
SPD07N60C3
SPU07N60C3
Final data
P-TO-252-3-1 (D-PAK)
P-TO-251-3-1 (I-PAK)
+0.15
6.5
-0.10
+0.05
-0.10
2.3
A
+0.08
-0.04
B
±0.1
5.4
0.9
C
0.15 max
per side
+0.08
±0.1
0.5
3 x 0.75
2.28
-0.04
1.0
4.56
M
0.25
A B C
GPT09050
All metal surfaces tin plated, except area of cut.
Page 11
2003-09-16
SPD07N60C3
SPU07N60C3
Final data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 12
2003-09-16
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