SPA12N50C3XKSA1 [INFINEON]
Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN;型号: | SPA12N50C3XKSA1 |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN 局域网 开关 脉冲 晶体管 |
文件: | 总14页 (文件大小:639K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SPP12N50C3
SPI12N50C3, SPA12N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
V
@ T
560
0.38
11.6
V
Ω
A
DS
jmax
R
DS(on)
I
D
FP
PG-TO220-PG-TO262- G-TO220
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
2
3
2
1
3
2
1
P-TO220-3-31
P-TO220-3-1
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
Package
Ordering Code
Q67040-S4579
Q67040-S4578
SP000216322
Marking
12N50C3
SPP12N50C3
SPI12N50C3
SPA12N50C3
PG-TO220
PG-TO262
PG-TO220FP
12N50C3
12N50C3
Maximum Ratings
Parameter
Symbol
Value
Unit
SPP_I
SPA
Continuous drain current
I
A
D
1)
T
= 25 °C
11.6
7
11.6
7
C
1)
T
= 100 °C
C
Pulsed drain current,
Avalanche energy, single pulse
t
limited by
T
I
D puls
34.8
340
34.8
340
A
mJ
p
jmax
E
AS
I
=5.5A,
V
=50V
D
DD
2)
E
Avalanche energy, repetitive
t
limited by
T
0.6
0.6
AR
AR
jmax
I
=11.6A,
V
=50V
D
DD
Avalanche current, repetitive
Gate source voltage
t
limited by
T
I
AR
11.6
±20
30
11.6
±20
30
A
V
AR
jmax
V
V
P
GS
GS
tot
Gate source voltage AC (f >1Hz)
Power dissipation, T = 25°C
125
33
W
C
Operating and storage temperature
Reverse diode dv/dt
T
dv/dt
,
T
-55...+150
°C
V/ns
j
stg
7)
15
Page 1
Rev. 3.1
2009-11-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
50
V/ns
V
= 400 V, I = 11.6 A, T = 125 °C
D j
DS
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
-
-
-
-
-
-
-
-
1
K/W
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
thJC
3.8
62
80
R
thJC_FP
R
thJA
R
thJA_FP
R
thJA
@ min. footprint
@ 6 cm cooling area
-
-
-
-
35
-
62
-
2
3)
260 °C
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
T
sold
4)
Electrical Characteristics, at T =25°C unless otherwise specified
j
Parameter
Symbol
Conditions
Values
Unit
min.
500
-
typ. max.
V
V
=0V, I =0.25mA
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =11.6A
600
-
V
GS
D
(BR)DS
I =500µA, V =V
2.1
3
3.9
Gate threshold voltage
Zero gate voltage drain current
V
I
D
GS DS
GS(th)
V
=500V, V =0V,
µA
DS
GS
DSS
T =25°C
-
-
0.1
-
1
100
j
T =150°C
j
V
V
=20V, V =0V
-
-
100 nA
Gate-source leakage current
Drain-source on-state resistance R
I
GS
DS
GSS
=10V, I =7A
Ω
GS
D
DS(on)
T =25°C
-
-
-
0.34
0.92
1.4
0.38
-
-
j
T =150°C
j
R
f=1MHz, open drain
Gate input resistance
G
Page 2
Rev. 3.1
2009-11-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
Unit
min.
typ. max.
Characteristics
Transconductance
g
V
≥2*I *R
DS(on)max
,
-
8
-
S
fs
DS
D
I =7A
D
Input capacitance
C
V
=0V, V =25V,
-
-
-
-
1200
400
30
-
-
-
-
pF
iss
GS
DS
f=1MHz
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
5)
V
V
=0V,
45
Effective output capacitance,
energy related
C
GS
o(er)
=0V to 400V
DS
6)
-
92
-
Effective output capacitance,
time related
C
o(tr)
Turn-on delay time
t
V
=380V, V =0/10V,
-
-
-
-
10
8
45
8
-
-
-
-
ns
d(on)
DD
GS
I =11.6A, R =6.8Ω
Rise time
t
D
G
r
Turn-off delay time
Fall time
t
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Q
Q
Q
V
=400V, I =11.6A
-
-
-
5
26
49
-
-
-
nC
V
gs
gd
g
DD
D
Gate to drain charge
V
V
=400V, I =11.6A,
Gate charge total
DD
D
=0 to 10V
GS
V
=400V, I =11.6A
-
5
-
Gate plateau voltage
V(plateau)
DD
D
1
2
Limited only by maximum temperature
Repetitve avalanche causes additional power losses that can be calculated asP =E *f.
AR
AV
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
5
Soldering temperature for TO-263: 220°C, reflow
C
is a fixed capacitance that gives the same stored energy as C
while V is rising from 0 to 80% V
.
DSS
oss
DS
o(er)
o(tr)
6
C
is a fixed capacitance that gives the same charging time as C
while V is rising from 0 to 80% V
.
oss
DS
DSS
7
ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max
.
Identical low-side and high-side switch.
Page 3
Rev. 3.1
2009-11-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
Electrical Characteristics
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T =25°C
-
-
11.6 A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
I
-
-
34.8
SM
pulsed
V
=0V, I =I
F S
-
-
-
-
-
1
380
5.5
38
1100
1.2
V
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V =400V, I =I ,
-
-
-
-
ns
µC
A
rr
R
F S
di /dt=100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
F
rr
I
rrm
T =25°C
A/µs
Peak rate of fall of reverse
recovery current
di /dt
j
rr
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPP_I
0.015
0.03
0.056
0.197
0.216
0.083
SPA
0.15
0.03
0.056
0.194
0.413
2.522
SPP_I
SPA
R
R
R
R
Rth5
R
K/W
C
C
C
C
C
C
0.0001878 0.0001878 Ws/K
0.0007106 0.0007106
0.000988
0.002791
0.007285
0.063
th1
th2
th3
th4
th1
th2
th3
th4
th5
th6
0.000988
0.002791
0.007401
0.412
th6
External Heatsink
Tj
Rth1
Rth,n
Tcase
Ptot (t)
Cth1
Cth2
Cth,n
Tamb
Page 4
Rev. 3.1
2009-11-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
1 Power dissipation
= f (T )
2 Power dissipation FullPAK
P = f (T )
tot
P
tot
C
C
SPP12N50C3
140
W
36
W
120
110
100
90
80
70
60
50
40
30
20
10
0
28
24
20
16
12
8
4
0
0
20
40
60
80 100 120
160
0
20
40
60
80 100 120
160
°C
°C
T
T
C
C
3 Safe operating area
I = f ( V
4 Safe operating area FullPAK
I = f (V
)
)
DS
D
DS
D
parameter : D = 0 , T =25°C
parameter: D = 0, T = 25°C
C
C
10 2
10 2
A
A
10 1
10 1
10 0
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
10 -1
10 -1
DC
tp = 10 ms
DC
10 -2
10 -2
10 0
10 1
10 2
10 3
10 0
10 1
10 2
10 3
V
V
V
V
DS
DS
Page 5
Rev. 3.1
209-11-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
5 Transient thermal impedance
= f (t )
6 Transient thermal impedance FullPAK
Z
Z
= f (t )
thJC
p
thJC
p
parameter: D = t /T
parameter: D = t /t
p
p
10 1
10 1
K/W
K/W
10 0
10 -1
10 -2
10 -3
10 -4
10 0
10 -1
10 -2
10 -3
10 -4
D = 0.5
D = 0.2
D = 0.1
D = 0.5
D = 0.05
D = 0.02
D = 0.01
single pulse
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -7
10 -6
10 -5
10 -4
10 -3
10 -1
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
10 1
s
s
p
t
t
p
7 Typ. output characteristic
I = f (V ); T =25°C
8 Typ. output characteristic
I = f (V ); T =150°C
D
DS
j
D
DS
j
parameter: t = 10 µs, V
parameter: t = 10 µs, V
p
GS
p
GS
40
22
A
20V
20V
A
10V
8V
8V
7.5V
7V
18
32
7V
6V
16
14
12
10
8
28
24
20
16
12
8
6.5V
5.5V
5V
6V
5.5V
6
4.5V
4V
4
5V
4.5V
V
4
2
0
0
0
5
10
15
25
0
5
10
15
25
V
V
V
DS
DS
Page 6
Rev. 3.1
2009-011-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
9 Typ. drain-source on resistance
=f(I )
10 Drain-source on-state resistance
R
R
= f (T )
DS(on)
D
DS(on) j
parameter: T =150°C, V
parameter : I = 7 A, V = 10 V
j
GS
D
GS
SPP12N50C3
2.1
Ω
2
Ω
1.8
1.6
1.4
1.2
1
4V
4.5V
5V
6V
5.5V
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
98%
typ
6.5V
8V
20V
°C
0
2
4
6
8
10 12 14 16
20
-60
-20
20
60
100
180
A
I
T
D
j
11 Typ. transfer characteristics
12 Typ. gate charge
= f (Q
I = f ( V ); V ≥ 2 x I x R
V
)
Gate
D
GS
DS
D
DS(on)max
GS
parameter: t = 10 µs
parameter: I = 11.6 A pulsed
p
D
SPP12N50C3
40
16
A
V
25°C
32
28
24
20
16
12
8
12
V
0,2
DS max
10
8
0,8 VDS max
150°C
6
4
2
4
0
0
0
1
2
3
4
5
6
7
8
10
V
V
GS
0
10
20
30
40
50
70
Gate
nC
Q
Page 7
Rev. 3.1
2009-11-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
13 Forward characteristics of body diode
I = f (V
14 Avalanche SOA
= f (t
)
I
)
AR
F
SD
AR
parameter: T , tp = 10 µs
par.: T ≤ 150 °C
j
j
10 2
SPP12N50C3
11
A
A
9
8
7
6
5
4
3
2
1
0
10 1
Tj(START)=25°C
10 0
Tj = 25 °C typ
Tj(START)=125°C
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -1
0
0.4
0.8
1.2
1.6
2
2.4
3
10 -3 10 -2 10 -1 10 0 10 1 10 2
10 4
V
V
µs
t
AR
SD
15 Avalanche energy
= f (T )
16 Drain-source breakdown voltage
E
V
= f (T )
AS
j
(BR)DSS
j
par.: I = 5.5 A, V = 50 V
D
DD
SPP12N50C3
350
600
V
mJ
570
560
550
540
530
520
510
500
490
480
470
460
450
250
200
150
100
50
0
20
40
60
80
100
120
160
-60
-20
20
60
100
180
°C
°C
T
T
j
j
Page 8
Rev. 3.1
2009-11-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
17 Avalanche power losses
= f (f )
18 Typ. capacitances
C = f (V
P
)
DS
AR
parameter: E =0.6mJ
parameter: V =0V, f=1 MHz
AR
GS
10 4
300
pF
Ciss
W
10 3
200
150
100
50
10 2
10 1
10 0
10 -1
Coss
Crss
0
10 4
10 5
10 6
0
100
200
300
500
DS
Hz
V
V
f
19 Typ. C
stored energy
oss
E
=f(V
)
oss
DS
6
µJ
4
3
2
1
0
0
100
200
300
500
DS
V
V
Page 9
Rev. 3.1
2009-11-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
Definition of diodes switching characteristics
Page 10
Rev. 3.1
2009-11-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
PG-TO-220-3-1, PG-TO220-3-21
Page 11
Rev. 3.1
2009-11-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
PG-TO220-3-31/3-111 Fully isolated package (2500VAC; 1 minute)
Page 12
Rev. 3.1
2009-11-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)
Page 13
Rev. 3.1
2009-11-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Page 14
Rev. 3.1
2009-11-30
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