SPA13003 [SANYO]
NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications; NPN型三重扩散平面硅晶体管开关稳压器的应用
| 型号： | SPA13003 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications |
| 文件： | 总4页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1402
SANYO Sem iconductors
DATA S HEET
SPA13003
(13003 series)
Features
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
•
High breakdown voltage.
•
High-speed switching.
•
Wide ASO.
•
Adoption of MBIT process.
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
V
700
700
400
8
CBO
CES
CEO
EBO
V
V
V
I
I
I
1
A
C
Collector Current (Pulse)
Base Current
PW 300 s, duty cycle 10%
2
A
≤
μ
≤
CP
B
0.5
0.6
150
A
Collector Dissipation
Junction Temperature
Storage Temperature
P
W
C
Tj
C
C
°
°
Tstg
-55 to +150
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
10
Collector Cutoff Current
Emitter Cutoff Current
I
I
V
V
V
V
V
=400V, I =0A
A
A
μ
CBO
EBO
CB
E
=5V, I =0A
10
μ
EB
CE
CE
CE
C
h
h
h
1
FE
2
FE
3
FE
=5V, I =0.1A
15
5
35
C
DC Current Gain
=5V, I =0.5A
C
=5V, I =1mA
7
C
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
No. A1402-1/4
21209CB MS IM TC-00001819
SPA13003
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
=10V, I =0.1A
Unit
min
max
Gain-Bandwidth Product
f
V
V
20
MHz
pF
V
T
CE
C
Output Capacitance
Cob
=10V, f=1MHz
10
CB
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
V
V
V
V
V
V
t
(sat)
(sat)
I
C
I
C
I
C
I
C
I
C
=0.5A, I =0.1A
0.8
CE
B
=0.5A, I =0.1A
0.5
V
BE
B
=1mA, I =0A
700
V
(BR)CBO
(BR)CES
(BR)CEO
(BR)EBO
E
=100 A, R =0
700
400
8
V
μ
Ω
BE
=5mA, R =
BE
V
∞
I =1mA, I =0A
V
E
C
I
I
I
=0.5A, I 1=0.05A, I 2=
-
-
-
0.5A, R =400Ω, V =200V
CC
1.0
1.0
0.3
s
μ
s
μ
s
μ
on
C
C
C
B
B
L
Storage Time
t
t
=0.5A, I 1=0.05A, I 2=
0.5A, R =400Ω, V =200V
CC
stg
f
B
B
L
Fall Time
=0.5A, I 1=0.05A, I 2=
0.5A, R =400Ω, V =200V
CC
B
B
L
Package Dimensions
unit : mm (typ)
Switching Time Test Circuit
7524-004
I
B1
PW=20μs
D.C.≤1%
OUTPUT
I
B2
2.2
4.0
INPUT
R
B
V
R
R
L
50Ω
0.4
0.5
+
+
100μF
470μF
V
= --5V
BE
V
=200V
CC
0.4
0.4
1
2
3
1.3
1.3
1 : Emitter
2 : Collector
3 : Base
3.0
3.8
SANYO : SPA
I
-- V
I
C
-- V
CE
C
BE
1.0
1.0
V
=5V
CE
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.8
0.6
0.4
0.2
0
0.1
0
I =0mA
B
0
0.2
0.4
0.6
0.8
1.0
1.2
IT13701
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Collector-to-Emitter Voltage, V
CE
-- V IT13700
Base-to-Emitter Voltage, V -- V
BE
No. A1402-2/4
SPA13003
h
-- I
h
-- I
FE
C
FE
C
7
5
7
5
V
=0.7V
CE
V
=5V
CE
3
2
3
2
10
10
7
5
7
5
3
2
3
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0
0.001
0.01
0.1
1.0
0.001
0.01
0.1
Collector Current, I -- A
C
Collector Current, I -- A
C
IT13702
IT13703
V
CE
(sat) -- I
Cob -- V
C
CB
7
5
3
2
f=1MHz
I
/ I =5
B
C
3
2
1.0
10
7
5
7
5
3
2
0.1
3
2
7
5
3
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
100
0.1
1.0
IT13704
Collector Current, I -- A
C
Collector-to-Base Voltage, V
CB
-- V
I
IT13705
V
(sat) -- I
SW Time -- I
BE
C
C
3
2
1.0
I
I
/ I =10
B1
/ I =5
B
C
C
/ I =10
B2 B1
7
5
R Load
3
2
1.0
7
5
0.1
7
5
3
0.01
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1.0
IT13706
0.1
1.0
Collector Current, I -- A
C
IT13707
Collector Current, I -- A
C
Forward Bias A S O
Reverse Bias A S O
5
3
2
3
2
L=500μH
= --0.2A
I
=2A
CP
I
B2
I =1A
C
Ta=25°C
1.0
7
5
1.0
Single pulse
7
5
3
2
3
2
0.1
7
5
3
2
0.1
7
5
0.01
7
5
3
2
3
2
Ta=25°C
Single pulse
0.01
100
0.001
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1000
1.0
10
100
IT14369
-- V
IT14417
Collector-to-Emitter Voltage, V
CE
-- V
Collector-to-Emitter Voltage, V
CE
No. A1402-3/4
SPA13003
P
-- Ta
C
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT14370
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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mentioned above.
This catalog provides information as of February, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1402-4/4
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