SPA11N80C3XK [INFINEON]
Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220FP, 3 PIN;
| 型号： | SPA11N80C3XK |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220FP, 3 PIN 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 |
| 文件： | 总10页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPA11N80C3
CoolMOSTM Power Transistor
Features
Product Summary
V DS
800
0.45
64
V
• New revolutionary high voltage technology
• Extreme dv/dt rated
R
DS(on)max @ Tj = 25°C
Ω
Q g,typ
nC
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
• Fully isolated package (2500 VAC; 1 minute)
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Type
Package
Marking
SPA11N80C3
PG-TO220FP
11N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
11
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
Continuous drain current
A
7.1
Pulsed drain current2)
33
I D,pulse
E AS
I D=2.2 A, V DD=50 V
I D=11 A, V DD=50 V
Avalanche energy, single pulse
Avalanche energy, repetitive t AR
470
0.2
mJ
2),3)
2),3)
E AR
I AR
11
A
Avalanche current, repetitive t AR
MOSFET dv /dt ruggedness
Gate source voltage
V
DS=0…640 V
50
dv /dt
V GS
V/ns
V
±20
±30
41
static
AC (f >1 Hz)
T C=25 °C
P tot
Power dissipation
W
T j, T stg
-55 ... 150
50
Operating and storage temperature
Mounting torque
°C
M2.5 screws
page 1
Ncm
Rev. 2.9
2008-10-15
SPA11N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
11
Parameter
Symbol Conditions
Unit
I S
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
A
T C=25 °C
I S,pulse
33
dv /dt
4
V/ns
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
3.7
80
K/W
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature,
wave soldering only allowed at leads
1.6 mm (0.063 in.)
from case for 10s
T sold
-
-
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V (BR)DS
V GS(th)
V
V
V
GS=0 V, I D=250 µA
GS=0 V, I D=11 A
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
800
-
-
870
3
-
-
V
DS=V GS, I D=0.68 mA
2.1
3.9
V
DS=800 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
20
-
µA
T j=25 °C
V
DS=800 V, V GS=0 V,
-
-
-
100
-
T j=150 °C
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=7.1 A,
Gate-source leakage current
100 nA
R DS(on)
Drain-source on-state resistance
0.39
0.45
Ω
T j=25 °C
V
GS=10 V, I D=7.1 A,
-
-
1.05
1.2
-
T j=150 °C
R G
Gate resistance
f =1 MHz, open drain
-
Ω
Rev. 2.9
page 2
2008-10-15
SPA11N80C3
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
-
-
1600
65
-
-
pF
V
GS=0 V, V DS=100 V,
f =1 MHz
C oss
Effective output capacitance, energy
related5)
C o(er)
-
-
50
-
-
V
GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
related6)
C o(tr)
140
t d(on)
t r
t d(off)
t f
Turn-on delay time
Rise time
-
-
-
-
25
15
72
10
-
-
-
-
ns
V
V
DD=400 V,
GS=0/10 V, I D=11 A,
Turn-off delay time
Fall time
R G=7.5 Ω, Tj = 25°C
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
8
-
-
nC
Q gd
30
64
5.5
V
V
DD=640 V, I D=11 A,
GS=0 to 10 V
Q g
85
-
V plateau
Gate plateau voltage
V
V
Reverse Diode
V
GS=0 V, I F=I S=11 A,
V SD
Diode forward voltage
-
1
1.2
T j=25 °C
t rr
Reverse recovery time
-
-
-
550
10
-
-
-
ns
µC
A
V R=400 V,
I F=I S=11 A,
di F/dt =100 A/µs
Q rr
I rrm
Reverse recovery charge
Peak reverse recovery current
33
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) ISD≤ID, di/dt≤200A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch
5) C o(er) is a fixed capacitance that gives the same stored energy asC oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time asC oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.9
page 3
2008-10-15
SPA11N80C3
1 Power dissipation
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
P
tot=f(T C)
102
40
limited by on-state
resistance
1 µs
30
20
10
10 µs
101
100 µs
1 ms
10 ms
100
DC
10-1
0
0
25
50
75
100
125
150
1
10
100
1000
T
C [°C]
V
DS [V]
3 Max. transient thermal impedance
thJC=f(tP)
4 Typ. output characteristics
I D=f(V DS); T j=25 °C; t p=10 µs
parameter: V GS
Z
parameter: D=t p/T
101
40
20 V
0.5
30
10 V
100
0.2
0.1
20
10
0
6.5 V
6 V
0.05
0.02
10-1
0.01
5.5 V
5 V
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
0
5
10
15
20
25
t
p [s]
V DS [V]
Rev. 2.9
page 4
2008-10-15
SPA11N80C3
5 Typ. output characteristics
I D=f(V DS); T j=150 °C; t p=10 µs
parameter: V GS
6 Typ. drain-source on-state resistance
DS(on)=f(I D); T j=150 °C
R
parameter: V GS
21
18
15
12
1.8
10 V 20 V
6 V
1.6
1.4
10 V
6.5 V
5.5 V
20 V
6 V
9
4.5 V
5 V
1.2
1
4 V
5 V
6
4.5 V
3
0
0.8
0
5
10
V
15
DS [V]
20
25
0
5
10
15
D [A]
20
25
30
I
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R
DS(on)=f(T j); I D=7.1 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 µs
parameter: T j
1.2
1
40
25 °C
30
20
10
0
0.8
150 °C
0.6
98 %
typ
0.4
0.2
0
-60
-20
20
60
100
140
180
0
2
4
6
8
10
T j [°C]
V GS [V]
Rev. 2.9
page 5
2008-10-15
SPA11N80C3
10 Forward characteristics of reverse diode
9 Typ. gate charge
GS=f(Q gate); I D=11 A pulsed
V
I F=f(V SD); t p=10 µs
parameter: T j
parameter: V DD
102
10
8
6
4
2
0
160 V
150°C (98%)
25 °C
640 V
101
150 °C
25°C (98°C)
100
10-1
0
0.5
1
1.5
2
0
10
20
30
40
50
60
70
Q
gate [nC]
V
SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E
AS=f(T j); I D=2.2 A; V DD=50 V
V
BR(DSS)=f(T j); I D=0.25 mA
960
920
880
840
800
760
720
680
500
400
300
200
100
0
-60
-20
20
60
100
140
180
25
50
75
100
125
150
T j [°C]
T j [°C]
Rev. 2.9
page 6
2008-10-15
SPA11N80C3
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
104
12
10
8
Ciss
103
102
6
Coss
4
101
Crss
2
100
0
0
0
100 200 300 400 500 600 700 800
DS [V]
100 200 300 400 500 600 700 800
V
V DS [V]
Rev. 2.9
page 7
2008-10-15
SPA11N80C3
Definition of diode switching characteristics
Rev. 2.9
page 8
2008-10-15
SPA11N80C3
PG-TO220FP: Outline
Rev. 2.9
page 9
2008-10-15
SPA11N80C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.9
page 10
2008-10-15
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