SP0610 [INFINEON]
SIPMOS Small-Signal Transistor; SIPMOS小信号晶体管
| 型号： | SP0610 |
| 厂家： | 
Infineon |
| 描述： | SIPMOS Small-Signal Transistor |
| 文件： | 总6页 (文件大小：365K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SIPMOS Small-Signal Transistor
SP 0610L
● VDS
● ID
− 60 V
− 0.18 A
● RDS(on) 10 Ω
● P channel
● Enhancement mode
2
3
1
Type
Ordering Code Tape and Reel
Pin Configuration Marking Package
Information
1
2
3
SP 0610 L Q67000-S065
bulk
D
G
S
SP0610L TO-92
Maximum Ratings
Parameter
Symbol
VDS
Values
− 60
Unit
Drain-source voltage
V
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
VDGR
VGS
− 60
± 20
Continuous drain current, TA = 25 ˚C
ID
− 0.18
− 0.72
0.63
A
Pulsed drain current,
TA = 25 ˚C
TA = 25 ˚C
ID puls
Ptot
Max. power dissipation,
W
Operating and storage temperature range
Tj, Tstg
− 55 … + 150
˚C
Thermal resistance, chip-ambient
(without heat sink)
RthJA
≤ 200
K/W
RthJSR
–
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
–
–
E
–
55/150/56
SP 0610L
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS(th)
IDSS
V
V
GS = 0, ID = 0.25 mA
Gate threshold voltage
GS = VDS, ID = 1 mA
Zero gate voltage drain current
DS = − 60 V, VGS = 0
− 60
–
–
V
− 1.0
− 1.5
− 2.0
µA
V
Tj = 25 ˚C
–
–
–
− 0.1
− 1
7
− 1
− 10
10
Gate-source leakage current
IGSS
nA
V
GS = − 20 V, VDS = 0
Drain-source on-resistance
GS = − 10 V, ID = − 0.5 A
RDS(on)
Ω
V
Dynamic Characteristics
Forward transconductance
gfs
S
V
DS ≥ 2 × ID × RDS(on)max, ID = − 0.5 A
Input capacitance
GS = 0, VDS = − 25 V, f = 1 MHz
Output capacitance
GS = 0, VDS = − 25 V, f = 1 MHz
Reverse transfer capacitance
GS = 0, VDS = − 25 V, f = 1 MHz
0.08
–
0.13
30
–
Ciss
pF
V
40
25
C
oss
V
–
17
C
rss
V
–
–
–
8
12
10
18
Turn-on time ton, (ton = td(on) + tr)
VDD = − 30 V, VGS = −10 V, RGS = 50 Ω,
ID = − 0.27 A
td(on)
tr
7
ns
12
Turn-off time toff, (toff = td(off) + tf)
VDD = − 30 V, VGS = −10 V, RGS = 50 Ω,
ID = − 0.27 A
td(off)
tf
–
–
10
20
13
27
SP 0610L
Electrical Characteristics (cont’d)
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
typ.
Unit
min.
max.
Reverse Diode
Continuous reverse drain current
IS
A
TA = 25 ˚C
–
–
–
–
− 0.18
− 0.72
− 1.2
Pulsed reverse drain current
TA = 25 ˚C
ISM
VSD
–
Diode forward on-voltage
IF = − 0.18 A, VGS = 0
V
− 0.85
Package Outline
TO-92
Dimensions in mm
SP 0610L
Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Total power dissipation Ptot = f (TA)
Safe operating area ID = f (VDS)
parameter: D = 0.01, TC = 25 ˚C
Typ. output characteristics ID = f (VDS)
parameter: tp = 80 µs
Typ. drain-source on-resistance
R
DS(on) = f (ID)
parameter: VGS
SP 0610L
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs, VDS ≥ 2 × ID × RDS(on)max.
Typ. forward transconductance gfs = f (ID)
parameter: VDS ≥ 2 × ID × RDS(on)max., tp = 80 µs
Drain-source on-resistance
Typ. capacitances C = f (VDS)
parameter: VGS = 0, f = 1 MHz
R
DS(on) = f (Tj)
parameter: ID = 0.5 A, VGS = 10 V, (spread)
SP 0610L
Gate threshold voltage VGS(th) = f (Tj)
Forward characteristics of reverse diode
parameter: VDS = VGS, ID = 1 mA, (spread)
IF = f (VSD)
parameter: tp = 80 µs, Tj, (spread)
Drain current ID = f (TA)
parameter: VGS ≥ 10 V
Drain-source breakdown voltage
V
(BR) DSS = b × V(BR)DSS (25 ˚C)
相关型号：
SP0610LE-6288
Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
INFINEON
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