SP0610T [INFINEON]
SIPMOS Small-Signal Transistor; SIPMOS小信号晶体管![SP0610T](http://pdffile.icpdf.com/pdf1/p00065/img/icpdf/SP0610_340311_icpdf.jpg)
型号: | SP0610T |
厂家: | ![]() |
描述: | SIPMOS Small-Signal Transistor |
文件: | 总8页 (文件大小:136K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SP 0610T
®
SIPMOS Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• V
= -1.0..-2.0V
GS(th)
Pin 1
G
Pin 2
S
Pin 3
D
Type
V
I
R
DS(on)
Package
Marking
DS
D
SP 0610T
-60 V
-0.13 A 10 Ω
SOT-23
sSF
Type
Ordering Code
Tape and Reel Information
SP 0610T
Q67000-S088
E6327
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
Drain-gate voltage
V
V
-60
V
DS
DGR
Ω
R
= 20 k
-60
GS
±
20
Gate source voltage
V
GS
Continuous drain current
I
A
D
T = 36 °C
-0.13
-0.52
0.36
A
DC drain current, pulsed
I
Dpuls
T = 25 °C
A
Power dissipation
P
W
tot
T = 25 °C
A
Semiconductor Group
1
Sep-13-1996
SP 0610T
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
T
-55 ... + 150 °C
-55 ... + 150
j
T
stg
Thermal resistance, chip to ambient air
R
≤ 350
K/W
thJA
1)
≤
Therminal resistance, chip-substrate- reverse side R
DIN humidity category, DIN 40 040
285
thJSR
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
V
V
(BR)DSS
GS(th)
DSS
V
= 0 V, I = -0.25 mA, T = 25 °C
-60
-1
-
-
GS
D
j
Gate threshold voltage
=
V
V
I = -1 mA
-1.5
-2
GS DS, D
Zero gate voltage drain current
I
I
µA
V
V
= -60 V, V = 0 V, T = 25 °C
-
-
-0.1
-2
-1
DS
DS
GS
j
= -60 V, V = 0 V, T = 125 °C
-60
GS
j
Gate-source leakage current
= -20 V, V = 0 V
nA
GSS
V
-
-
-1
7
-10
10
GS
DS
Ω
Drain-Source on-state resistance
= -10 V, I = -0.5 A
R
DS(on)
V
GS
D
Semiconductor Group
2
Sep-13-1996
SP 0610T
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
g
S
fs
≥
V
2 I
R I = -0.5 A
0.08
0.13
30
17
8
-
DS
* D * DS(on)max, D
Input capacitance
= 0 V, V = -25 V, f = 1 MHz
C
C
C
pF
iss
V
-
-
-
40
25
12
GS
DS
Output capacitance
= 0 V, V = -25 V, f = 1 MHz
oss
V
GS
DS
Reverse transfer capacitance
= 0 V, V = -25 V, f = 1 MHz
rss
V
GS
DS
Turn-on delay time
= -30 V, V = -10 V, I = -0.27 A
t
t
t
t
ns
d(on)
V
DD
GS
D
Ω
R
= 50
-
-
-
-
7
10
18
13
27
GS
Rise time
= -30 V, V = -10 V, I = -0.27 A
r
V
DD
GS
D
Ω
R
= 50
12
10
20
GS
Turn-off delay time
= -30 V, V = -10 V, I = -0.27 A
d(off)
V
DD
GS
D
R
= 50 Ω
GS
Fall time
= -30 V, V = -10 V, I = -0.27 A
f
V
DD
GS
D
R
= 50 Ω
GS
Semiconductor Group
3
Sep-13-1996
SP 0610T
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Reverse Diode
Inverse diode continuous forward current I
A
S
T = 25 °C
-
-
-
-
-0.13
-0.52
-1.2
A
Inverse diode direct current,pulsed
I
SM
T = 25 °C
-
A
Inverse diode forward voltage
V
V
SD
V
= 0 V, I = -0.18 A, T = 25 °C
-0.85
GS
F
j
Semiconductor Group
4
Sep-13-1996
SP 0610T
Power dissipation
Drain current
ƒ
ƒ
I = (T )
D A
P
= (T )
tot
A
≥
parameter: V
-10 V
GS
0.40
W
-0.14
A
-0.12
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
Ptot
ID
-0.11
-0.10
-0.09
-0.08
-0.07
-0.06
-0.05
-0.04
-0.03
-0.02
-0.01
0.00
0.00
0
20
40
60
80 100 120
°C 160
TA
0
20
40
60
80 100 120
°C 160
TA
Safe operating area I =f(V
)
DS
Drain-source breakdown voltage
D
ƒ
parameter : D = 0.01, T =25°C
V
= (T )
C
(BR)DSS
j
-71
V
-68
V(BR)DSS
-66
-64
-62
-60
-58
-56
-54
-60
-20
20
60
100
°C
Tj
160
Semiconductor Group
5
Sep-13-1996
SP 0610T
Typ. output characteristics
ƒ(
Typ. drain-source on-resistance
ƒ(
I =
V
)
R
=
I )
D
D
DS
DS (on)
parameter: t = 80 µs
parameter: t = 80 µs, T = 25 °C
p j
p
32
-0.30
P
tot = 0W
ab
c
d
e
f
g
A
-0.26
-0.24
-0.22
-0.20
-0.18
-0.16
-0.14
-0.12
-0.10
-0.08
-0.06
-0.04
k
l
j
i
h
Ω
V
[V]
GS
a
ID
RDS (on)
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-6.0
-7.0
-8.0
-9.0
24
20
16
12
8
b
c
d
e
f
g
f
g
h
i
e
j
h
k
i
d
l
-10.0
j
k
l
c
a
V
[V] =
GS
a
4
0
b
c
d
e
f
g
h
i
j
k
l
b
-0.02
0.00
-2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0
0.0
-1.0
-2.0
-3.0
-4.0
V
-6.0
0.00
-0.04
-0.08
-0.12
-0.16
A
-0.24
VDS
ID
Typ. transfer characteristics I = f(V
)
Typ. forward transconductance g = f (I )
D
GS
fs
D
parameter: t = 80 µs
parameter: t = 80 µs,
p
p
-0.65
A
0.16
S
-0.55
ID
gfs
-0.50
0.12
-0.45
-0.40
-0.35
-0.30
-0.25
-0.20
-0.15
-0.10
0.10
0.08
0.06
0.04
0.02
0.00
-0.05
0.00
0
-1 -2 -3 -4 -5 -6 -7 -8
V
VGS
-10
0.00
-0.10
-0.20
-0.30
-0.40
A
ID
-0.55
Semiconductor Group
6
Sep-13-1996
SP 0610T
Drain-source on-resistance
Gate threshold voltage
ƒ
ƒ
= (T )
GS (th) j
R
= (T )
V
DS (on)
j
parameter: I = -0.5 A, V = -10 V
parameter: V = V , I = -1 mA
GS DS D
D
GS
24
-4.6
V
Ω
-4.0
20
18
16
14
12
10
8
RDS (on)
VGS(th)
-3.6
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
98%
98%
typ
typ
2%
6
4
-0.4
0.0
2
0
-60
-20
20
60
100
°C
Tj
160
-60
-20
20
60
100
°C
Tj
160
Typ. capacitances
Forward characteristics of reverse diode
ƒ
C = f (V )
I = (V
)
DS
F
SD
parameter: T , t = 80 µs
parameter:V =0V, f = 1 MHz
j
p
GS
10 3
-10 0
pF
A
C
IF
10 2
10 1
10 0
-10 -1
-10 -2
-10 -3
Ciss
Coss
Crss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0
-5
-10 -15 -20 -25 -30
V
VDS
-40
0.0
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4
V
-3.0
VSD
7
Sep-13-1996
Semiconductor Group
SP 0610T
Package outlines
SOT-23
Dimensions in mm
Semiconductor Group
8
Sep-13-1996
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