SC125H100A5BT [INFINEON]
Rectifier Diode, Schottky, 1 Phase, 1 Element, Silicon, 0.125 X 0.125 INCH, DIE-2;
| 型号： | SC125H100A5BT |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, Silicon, 0.125 X 0.125 INCH, DIE-2 二极管 |
| 文件： | 总4页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet I0507J rev. A 07/00
SC125.....5.. Series
SCHOTTKY DIE 125 x 125 mils
NOTES:
a
c
0.25 ± 0.01
(0.10 ± 0.0004)
1. ALL DIMENSIONS ARE SHOWN IN
MILLIMETERS (INCHES).
Ink Dot Location
2. CONTROLLING DIMENSION: (INCH).
3. DIMENSIONS AND TOLERANCES:
C
A
a = 3.175 + 0, - 0.05
(0.125 + 0, - 0.002)
b = 3.175 + 0, - 0.05
(0.125 + 0, - 0.002)
c = 3.085 + 0, - 0.003
(0.121 + 0, - 0.0001)
d = 3.085 + 0, - 0.003
(0.121 + 0, - 0.0001)
e = 1.54 + 0, - 0.003
(0.061 + 0, - 0.0001)
f = 1.54 + 0, - 0.003
(0.061 + 0, - 0.0001)
D
Ø
f
40 (1.57)
Wafer flat aligned with
side b of the die
Ø = 0.7 ± 0.1
(0.03 ± 0.004)
4. LETTER DESIGNATION:
A = Anode (Top Metal)
C = Cathode (Back Metal)
D = Reject Ink Dot (only on non-conforming dies)
5. SAWING:
Recommended Blade
SEMITEC S1025 QS00 Blade
Ø 125 (4.92)
NOT TO SCALE
1
SC125.....5. Series
Preliminary Data Sheet I0507J rev. A 07/00
Electrical Characteristics
Device
#
T
Max.
V
(V)
Max. I @ 25°C
R
(*) Max. V @ I
J
(°C)
R
F
F
(mA)
(V)
SC125S020A5..
SC125S030A5..
SC125S045A5..
SC125S060A5..
SC125H100A5..
150
150
150
150
150
20
6
0.42 @ 29A
0.46 @ 22A
0.51 @ 14A
0.54 @ 11A
0.69 @ 7A
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
30
1.5
1.0
0.6
0.4
45
60
100
(*) For reference only, VF do not include voltage drop across wire bonding resistance
Mechanical Data
Device
MetalThickness
FrontMetal
MetalThickness
BackMetal
#
SC125.....A5..
Bondable
--
Al/Si 30 kÅ
--
Ti 1 kÅ
Ni 4 kÅ
Ag 6 kÅ
Visual Inspection : see IR internal Spec. # 6373-2064
RecommendedStorageEnvironment: Store in original container, in dessicated nitrogen, with no contamination.
Shelf life for parts stored in above condition is 2 years.
If the storage is done in normal atmosphere shelf life is reduced to six months.
Packaging
Device
Description
Minimum Order Quantity
Wafer in Sale Package
#
SC125....A5B.
Inked Probed Unsawn Wafer (Wafer in Box)
48
2
SC125.....5. Series
Preliminary Data Sheet I0507J rev. A 07/00
Ordering Information Table
Device Code
SC 125
S
060
A
5
B
T
3
4
5
7
8
1
2
6
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
Schottky Die
Chip Dimension in Mils (125 x 125)
H = 830 Process
R = OR' ing Process
S = Standard Process
Process (see Electrical Characteristics Table)
Voltage code: Code = VRRM
Chip surface metallization (Al)
Wafer Diameter in inches
Packaging (B = inked Probed Unsawn Wafers)
Thickness (omitted if 14 mils, T for 10 mils Die)
7
Wafer in Box
7
ROUNDCONTAINER
TYVEK DISK
FOAM DISK
3
SC125.....5. Series
Preliminary Data Sheet I0507J rev. A 07/00
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
EUROPEANHEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
4
相关型号：
SC125H100A5BTPBF
Rectifier Diode, Schottky, 1 Phase, 1 Element, Silicon, 0.125 X 0.125 INCH, DIE-2
INFINEON
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