Q67040-S4597 [INFINEON]
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode; 高速2 -技术具有柔软，快速恢复反并联EMCON何二极管
| 型号： | Q67040-S4597 |
| 厂家： | 
Infineon |
| 描述： | HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode |
| 文件： | 总15页 (文件大小：432K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKP03N120H2,
IKW03N120H2
IKB03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
•
Designed for:
- SMPS
C
- Lamp Ballast
- ZVS-Converter
G
•
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
E
P-TO-247-3-1
(TO-247AC)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
P-TO-220-3-1
(TO-220AB)
- Eoff optimized for IC =3A
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
Eoff
Tj
Package
Ordering Code
Q67040-S4595
Q67040-S4594
IKW03N120H2
IKP03N120H2
IKB03N120H2
1200V
1200V
1200V
3A
3A
3A
0.15mJ
0.15mJ
0.15mJ
P-TO-247
150°C
150°C P-TO-220-3-1
150°C P-TO-263 (D2PAK) Q67040-S4597
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
VCE
IC
1200
V
A
9.6
3.9
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
ICpuls
-
9.9
9.9
V
CE ≤ 1200V, Tj ≤ 150°C
Diode forward current
IF
9.6
3.9
TC = 25°C
TC = 100°C
Gate-emitter voltage
Power dissipation
VGE
Ptot
V
W
±20
62.5
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj , Tstg
-
-40...+150
260
°C
225 (for SMD)
1
Rev. 2, Mar-04
Power Semiconductors
IKP03N120H2,
IKW03N120H2
IKB03N120H2
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction - case
RthJC
RthJCD
RthJA
RthJA
2.0
3.2
62
K/W
Thermal resistance,
junction – ambient
P-TO-220-3-1
P-TO-247-3-1
P-TO-263 (D2PAK)
SMD version, device on PCB1)
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V(BR)C ES
1200
-
-
V
VGE=0V, IC=300µA
Collector-emitter saturation voltage
VC E(sa t) VGE = 15V, IC=3A
Tj=25°C
-
-
2.2
2.5
2.8
-
Tj=150°C
VGE = 10V, IC=3A,
Tj=25°C
-
2.4
-
Diode forward voltage
VF
VGE = 0, IF=2A
Tj=25°C
-
-
2.0
1.75
2.5
-
Tj=150°C
Gate-emitter threshold voltage
Zero gate voltage collector current
VGE(th )
IC ES
2.1
3
3.9
IC=90µA,VCE=VGE
VC E=1200V,VGE=0V
Tj=25°C
µA
-
-
-
-
20
80
Tj=150°C
Gate-emitter leakage current
Transconductance
IGES
gfs
VC E=0V,VGE=20V
VC E=20V, IC=3A
-
-
-
2
100
-
nA
S
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
VC E=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=3A
VGE=15V
-
-
-
-
205
24
7
-
-
-
-
pF
Coss
Crss
QGa te
22
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE
P-TO-220-3-1
P-TO-247-3-1
-
7
13
-
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2
Rev. 2, Mar-04
Power Semiconductors
IKP03N120H2,
IKW03N120H2
IKB03N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td (on)
tr
td (off)
tf
-
-
-
-
-
-
-
9.2
5.2
281
29
0.14
0.15
0.29
-
-
-
-
-
-
-
ns
Tj=25°C,
VCC=800V,IC=3A,
VGE=15V/0V,
RG=82Ω,
Lσ 2)=180nH,
Cσ 2)=40pF
Eon
Eo ff
Ets
mJ
Energy losses include
“tail” and diode 3)
reverse recovery.
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current Irrm
Diode current slope
trr
-
-
-
-
-
42
-
-
-
-
-
ns
µC
A
Tj=25°C,
VR=800V, IF=3A,
RG=82Ω
Qrr
0.23
10.3
993
diF/dt
A/µs
Diode peak rate of fall of reverse
dirr/dt
1180
recovery current during tb
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td (on)
tr
td (off)
tf
-
-
-
-
-
-
-
9.4
6.7
340
63
0.22
0.26
0.48
-
-
-
-
-
-
-
ns
Tj=150°C
VCC=800V,
IC=3A,
VGE=15V/0V,
RG=82Ω,
Eon
Eo ff
Ets
mJ
Lσ 2)=180nH,
Cσ 2)=40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current Irrm
Diode current slope
trr
-
-
-
-
-
125
0.51
12
829
540
-
-
-
-
-
ns
µC
A
Tj=150°C
VR=800V, IF=3A,
RG=82Ω
Qrr
diF/dt
A/µs
Diode peak rate of fall of reverse
dirr/dt
recovery current during tb
2) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E
3) Commutation diode from device IKP03N120H2
3
Rev. 2, Mar-04
Power Semiconductors
IKP03N120H2,
IKW03N120H2
IKB03N120H2
Switching Energy ZVT, Inductive Load
Parameter
Value
Unit
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-off energy
Eo ff
VCC=800V,
mJ
IC=3A,
VGE=15V/0V,
RG=82Ω,
Cr2)=4nF
Tj=25°C
-
-
0.05
0.09
-
-
Tj=150°C
4
Rev. 2, Mar-04
Power Semiconductors
IKP03N120H2,
IKW03N120H2
IKB03N120H2
tp=1µs
Ic
12A
10A
8A
10A
1A
5µs
10µs
TC=80°C
50µs
6A
TC=110°C
100µs
4A
0,1A
500µs
2A
Ic
DC
0A
10Hz
100Hz
1kHz
10kHz
100kHz
0,01A
1V
10V
100V
1000V
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
Figure 2. Safe operating area
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 82Ω)
(D = 0, TC = 25°C, Tj ≤ 150°C)
12A
10A
8A
60W
50W
40W
30W
20W
10W
0W
6A
4A
2A
0A
25°C
50°C
75°C
100°C 125°C
25°C
50°C
75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(Tj ≤ 150°C)
(VGE ≤ 15V, Tj ≤ 150°C)
5
Rev. 2, Mar-04
Power Semiconductors
IKP03N120H2,
IKW03N120H2
IKB03N120H2
10A
8A
6A
4A
2A
0A
10A
9A
8A
VGE=15V
VGE=15V
7A
6A
5A
4A
3A
2A
1A
0A
12V
10V
8V
12V
10V
8V
6V
6V
0V
1V
2V
3V
4V
5V
0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 25°C)
(Tj = 150°C)
12A
10A
3V
IC=6A
IC=3A
8A
2V
Tj=+150°C
IC=1.5A
Tj=+25°C
6A
4A
2A
0A
1V
0V
3V
5V
7V
9V
-50°C
0°C
50°C
100°C
150°C
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
(VCE = 20V)
saturation voltage as a function of junction
temperature
(VGE = 15V)
6
Rev. 2, Mar-04
Power Semiconductors
IKP03N120H2,
IKW03N120H2
IKB03N120H2
1000ns
100ns
10ns
1000ns
100ns
10ns
td(off)
td(off)
tf
tf
td(on)
td(on)
tr
tr
1ns
1ns
0Ω
50Ω
100Ω
150Ω
0A
2A
4A
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C,
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E)
VCE = 800V, VGE = +15V/0V, RG = 82Ω,
dynamic test circuit in Fig.E)
1000ns
5V
4V
td(off)
100ns
max.
3V
2V
1V
0V
tf
typ.
td(on)
10ns
min.
tr
1ns
25°C
50°C
75°C 100°C 125°C 150°C
-50°C
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.09mA)
VGE = +15V/0V, IC = 3A, RG = 82Ω,
dynamic test circuit in Fig.E)
7
Rev. 2, Mar-04
Power Semiconductors
IKP03N120H2,
IKW03N120H2
IKB03N120H2
1.0mJ
0.5mJ
0.0mJ
1) Eon and Ets include losses
1) Eon and Ets include losses
1
Ets
0.7mJ
0.6mJ
0.5mJ
0.4mJ
0.3mJ
0.2mJ
due to diode recovery.
1
Ets
due to diode recovery.
Eoff
1
Eon
Eoff
1
Eon
0Ω
50Ω
100Ω 150Ω 200Ω 250Ω
0A
2A
4A
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C,
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E )
VCE = 800V, VGE = +15V/0V, RG = 82Ω,
dynamic test circuit in Fig.E )
0.5mJ
1) Eon and Ets include losses
1
IC=3A, TJ=150°C
Ets
0.16mJ
due to diode recovery.
0.4mJ
0.3mJ
0.12mJ
IC=3A, TJ=25°C
0.08mJ
Eoff
IC=1A, TJ=150°C
1
Eon
0.2mJ
0.04mJ
IC=1A, TJ=25°C
0.1mJ
0.00mJ
0V/us
1000V/us
2000V/us
3000V/us
25°C
80°C
125°C
150°C
dv/dt, VOLTAGE SLOPE
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82Ω,
dynamic test circuit in Fig.E )
Figure 16. Typical turn off switching energy
loss for soft switching
(dynamic test circuit in Fig. E)
8
Rev. 2, Mar-04
Power Semiconductors
IKP03N120H2,
IKW03N120H2
IKB03N120H2
20V
15V
10V
5V
D=0.5
100K/W
0.2
0.1
UCE=240V
0.05
-1
10 K/W
R , ( K / W )
1.082517
0.328671
0.588811
τ , ( s )
0.000795
0.000179
0.004631
UCE=960V
0.02
0.01
R1
R2
-2
10 K/W
single pulse
10µs
C1=τ1/R1 C2=τ2/R2
100µs 1ms 10ms
0V
0nC
10nC
20nC
30nC
1µs
100ms
QGE, GATE CHARGE
QGE, GATE CHARGE
Figure 17. Typical gate charge
Figure 17. Typical gate charge
(IC = 3A)
(IC = 3A)
1nF
1000V
3A
2A
1A
0A
800V
600V
400V
200V
0V
Ciss
100pF
Coss
10pF
Crss
0V
10V
20V
30V
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VCE, COLLECTOR-EMITTER VOLTAGE
tp, PULSE WIDTH
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
Figure 20. Typical turn off behavior, hard
switching
(VGE=15/0V, RG=82Ω, Tj = 150°C,
Dynamic test circuit in Figure E)
9
Rev. 2, Mar-04
Power Semiconductors
IKP03N120H2,
IKW03N120H2
IKB03N120H2
3A
2A
1A
0A
800V
600V
400V
200V
0V
D=0.5
100K/W
0.2
0.1
0.05
R , ( K / W )
1.9222
τ , ( s )
7.04E-04
2.02E-04
4.39E-03
R2
0.02
0.01
0.5852
10-1K/W
0.7168
R1
single pulse
C1=τ 1/R1 C2=τ 2/R2
10-2K/W
10µs
100µs
1ms
10ms
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
tp, PULSE WIDTH
tP, PULSE WIDTH
Figure 21. Typical turn off behavior, soft
switching
Figure 22. Diode transient thermal
impedance as a function of pulse width
(D=tP/T)
(VGE=15/0V, RG=82Ω, Tj = 150°C,
Dynamic test circuit in Figure E)
0.6uC
180ns
160ns
140ns
120ns
100ns
80ns
TJ=150°C
0.5uC
0.4uC
0.3uC
0.2uC
TJ=150°C
60ns
TJ=25°C
TJ=25°C
40ns
0Ohm
100Ohm
200Ohm
300Ohm
0Ohm
100Ohm
200Ohm
300Ohm
RG, GATE RESISTANCE
RG, GATE RESISTANCE
Figure 24. Typical reverse recovery
charge as a function of diode current
slope
Figure 23. Typical reverse recovery time
as a function of diode current slope
VR=800V, IF=3A,
Dynamic test circuit in Figure E)
(VR=800V, IF=3A,
Dynamic test circuit in Figure E)
10
Rev. 2, Mar-04
Power Semiconductors
IKP03N120H2,
IKW03N120H2
IKB03N120H2
16A
14A
12A
10A
8A
-600A/us
-800A/us
TJ=150°C
-1000A/us
-1200A/us
-1400A/us
-1600A/us
-1800A/us
TJ=150°C
TJ=25°C
TJ=25°C
0Ohm
100Ohm
200Ohm
300Ohm
0Ohm
100Ohm
200Ohm
300Ohm
RG, GATE RESISTANCE
Figure 25. Typical reverse recovery
current as a function of diode current
slope
RG, GATE RESISTANCE
Figure 26. Typical diode peak rate of fall
of reverse recovery current as a
function of diode current slope
(VR=800V, IF=3A,
(VR=800V, IF=3A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
3.0V
2.5V
2.0V
1.5V
1.0V
IF=4A
4A
2A
0A
TJ=150°C
IF=2A
IF=1A
TJ=25°C
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
3V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current
as a function of forward voltage
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward
voltage as a function of junction
temperature
11
Rev. 2, Mar-04
Power Semiconductors
IKP03N120H2,
IKW03N120H2
IKB03N120H2
dimensions
[mm]
TO-220AB
symbol
[inch]
min
9.70
14.88
0.65
3.55
2.60
6.00
13.00
4.35
0.38
0.95
max
10.30
15.95
0.86
3.89
3.00
6.80
14.00
4.75
0.65
1.32
min
max
A
B
C
D
E
F
0.3819
0.5858
0.0256
0.1398
0.1024
0.2362
0.5118
0.1713
0.0150
0.0374
0.4055
0.6280
0.0339
0.1531
0.1181
0.2677
0.5512
0.1870
0.0256
0.0520
G
H
K
L
M
N
P
T
2.54 typ.
0.1 typ.
4.30
4.50
1.40
2.72
0.1693
0.0461
0.0906
0.1772
0.0551
0.1071
1.17
2.30
TO-263AB (D2Pak)
dimensions
symbol
[mm]
[inch]
min
9.80
0.70
1.00
1.03
max
10.20
1.30
1.60
1.07
min
max
A
B
C
D
E
F
0.3858
0.0276
0.0394
0.0406
0.4016
0.0512
0.0630
0.0421
2.54 typ.
0.65 0.85
5.08 typ.
0.1 typ.
0.0256
0.0335
G
H
K
L
0.2 typ.
4.30
4.50
1.37
9.45
2.50
0.1693
0.0461
0.3563
0.0906
0.1772
0.0539
0.3720
0.0984
1.17
9.05
2.30
M
N
P
Q
R
S
T
15 typ.
0.5906 typ.
0.00
4.20
0.20
5.20
0.0000
0.1654
0.0079
0.2047
8° max
8° max
2.40
0.40
3.00
0.60
0.0945
0.0157
0.1181
0.0236
U
V
W
X
Y
Z
10.80
1.15
6.23
4.60
9.40
16.15
0.4252
0.0453
0.2453
0.1811
0.3701
0.6358
12
Rev. 2, Mar-04
Power Semiconductors
IKP03N120H2,
IKW03N120H2
IKB03N120H2
dimensions
TO-247AC
symbol
[mm]
symbol
min
min
4.78
2.29
1.78
1.09
A
B
C
D
E
F
A
B
C
D
4.78
2.29
1.78
1.09
A
B
C
D
1.73
E
2.67
F
G
H
K
L
2.67
F
G
H
K
L
G
H
K
L
0.76 max
20.80
15.65
5.21
0.76 max
20.80
15.65
5.21
M
N
P
Q
19.81
3.560
3.61
M
N
19.81
3.560
3.61
M
N
P
P
6.12
Q
6.12
Q
dimensi
ons
dimensi
ons
symbol
[mm]
min
symbol
[mm]
min
symbol
13
Rev. 2, Mar-04
Power Semiconductors
IKP03N120H2,
IKW03N120H2
IKB03N120H2
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
tF
t
QS
10% Ir r m
QF
Ir r m
dir r /dt
90% Ir r m
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r 2
τn
r1
r n
T (t)
j
p(t)
r 2
r1
rn
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
½ Lσ
öö
DUT
L
Cσ
Cr
(Diode)
VDC
RG
DUT
(IGBT)
½ Lσ
Figure E. Dynamic test circuit
Leakage inductance Lσ = 180nH,
Stray capacitor Cσ = 40pF,
Relief capacitor Cr = 4nF (only for
ZVT switching)
Figure B. Definition of switching losses
14
Rev. 2, Mar-04
Power Semiconductors
IKP03N120H2,
IKW03N120H2
IKB03N120H2
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15
Rev. 2, Mar-04
Power Semiconductors
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