Q67040-S4598 [INFINEON]
HighSpeed 2-Technology; 高速2 -技术
| 型号： | Q67040-S4598 |
| 厂家： | 
Infineon |
| 描述： | HighSpeed 2-Technology |
| 文件： | 总13页 (文件大小：398K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGP03N120H2,
IGW03N120H2
IGB03N120H2
HighSpeed 2-Technology
•
Designed for:
- SMPS
C
E
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
G
•
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
P-TO-247-3-1
(TO-247AC)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
P-TO-220-3-1
(TO-220AB)
- Eoff optimized for IC =3A
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
Eoff
Tj
Package
Ordering Code
Q67040-S4596
Q67040-S4599
IGW03N120H2
IGP03N120H2
IGB03N120H2
1200V
1200V
1200V
3A
3A
3A
0.15mJ
0.15mJ
0.15mJ
P-TO-247
150°C
150°C P-TO-220-3-1
150°C P-TO-263 (D2PAK) Q67040-S4598
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
VCE
IC
1200
V
A
9.6
3.9
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
ICpuls
-
9.9
9.9
V
CE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Power dissipation
VGE
Ptot
V
W
±20
62.5
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj , Tstg
-
-40...+150
260
°C
225 (for SMD)
1
Rev. 2, Mar-04
Power Semiconductors
IGP03N120H2,
IGW03N120H2
IGB03N120H2
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC
RthJA
RthJA
2.0
62
40
K/W
Thermal resistance,
junction – ambient
P-TO-220-3-1
P-TO-247-3-1
P-TO-263 (D2PAK)
SMD version, device on PCB1)
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V(BR)C ES
1200
-
-
V
VGE=0V, IC=300µA
Collector-emitter saturation voltage
VC E(sa t) VGE = 15V, IC=3A
Tj=25°C
-
-
2.2
2.5
2.8
-
Tj=150°C
VGE = 10V, IC=3A,
Tj=25°C
-
2.4
3
-
Gate-emitter threshold voltage
Zero gate voltage collector current
VGE(th )
IC ES
2.1
3.9
IC=90µA,VCE=VGE
VC E=1200V,VGE=0V
Tj=25°C
µA
-
-
-
-
20
80
Tj=150°C
Gate-emitter leakage current
Transconductance
IGES
gfs
VC E=0V,VGE=20V
VC E=20V, IC=3A
-
-
-
2
100
-
nA
S
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
VC E=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=3A
VGE=15V
-
-
-
-
205
24
7
-
-
-
-
pF
Coss
Crss
QGa te
22
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE
P-TO-220-3-1
P-TO-247-3-1
-
7
13
-
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2
Rev. 2, Mar-04
Power Semiconductors
IGP03N120H2,
IGW03N120H2
IGB03N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td (on)
tr
td (off)
tf
-
-
-
-
-
-
-
9.2
5.2
281
29
0.14
0.15
0.29
-
-
-
-
-
-
-
ns
Tj=25°C,
VCC=800V,IC=3A,
VGE=15V/0V,
RG=82Ω,
Lσ 2)=180nH,
Cσ 2)=40pF
Eon
Eo ff
Ets
mJ
Energy losses include
“tail” and diode 3)
reverse recovery.
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td (on)
tr
td (off)
tf
-
-
-
-
-
-
-
9.4
6.7
340
63
0.22
0.26
0.48
-
-
-
-
-
-
-
ns
Tj=150°C
VCC=800V,
IC=3A,
VGE=15V/0V,
RG=82Ω,
Eon
Eo ff
Ets
mJ
Lσ 2)=180nH,
Cσ 2)=40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
Switching Energy ZVT, Inductive Load
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-off energy
Eo ff
VCC=800V,
IC=3A,
mJ
VGE=15V/0V,
RG=82Ω,
Cr2)=4nF
Tj=25°C
-
-
0.05
0.09
-
-
Tj=150°C
2) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E
3) Commutation diode from device IKP03N120H2
3
Rev. 2, Mar-04
Power Semiconductors
IGP03N120H2,
IGW03N120H2
IGB03N120H2
tp=1µs
Ic
12A
10A
8A
10A
1A
5µs
10µs
TC=80°C
50µs
6A
TC=110°C
100µs
4A
0,1A
500µs
2A
Ic
DC
0A
10Hz
100Hz
1kHz
10kHz
100kHz
,01A
1V
10V
100V
1000V
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
Figure 2. Safe operating area
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 82Ω)
(D = 0, TC = 25°C, Tj ≤ 150°C)
12A
60W
50W
40W
30W
20W
10W
0W
10A
8A
6A
4A
2A
0A
25°C
50°C
75°C
100°C 125°C
25°C
50°C
75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(Tj ≤ 150°C)
(VGE ≤ 15V, Tj ≤ 150°C)
4
Rev. 2, Mar-04
Power Semiconductors
IGP03N120H2,
IGW03N120H2
IGB03N120H2
10A
8A
6A
4A
2A
0A
10A
9A
8A
VGE=15V
VGE=15V
7A
6A
5A
4A
3A
2A
1A
0A
12V
10V
8V
12V
10V
8V
6V
6V
0V
1V
2V
3V
4V
5V
0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 25°C)
(Tj = 150°C)
12A
10A
3V
IC=6A
IC=3A
8A
2V
Tj=+150°C
IC=1.5A
Tj=+25°C
6A
4A
2A
0A
1V
0V
3V
5V
7V
9V
-50°C
0°C
50°C
100°C
150°C
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
(VCE = 20V)
saturation voltage as a function of junction
temperature
(VGE = 15V)
5
Rev. 2, Mar-04
Power Semiconductors
IGP03N120H2,
IGW03N120H2
IGB03N120H2
1000ns
100ns
10ns
1000ns
100ns
10ns
td(off)
td(off)
tf
tf
td(on)
td(on)
tr
tr
1ns
1ns
0Ω
50Ω
100Ω
150Ω
0A
2A
4A
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C,
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E)
VCE = 800V, VGE = +15V/0V, RG = 82Ω,
dynamic test circuit in Fig.E)
1000ns
5V
4V
td(off)
100ns
max.
3V
2V
1V
0V
tf
typ.
td(on)
10ns
min.
tr
1ns
25°C
50°C
75°C 100°C 125°C 150°C
-50°C
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.09mA)
VGE = +15V/0V, IC = 3A, RG = 82Ω,
dynamic test circuit in Fig.E)
6
Rev. 2, Mar-04
Power Semiconductors
IGP03N120H2,
IGW03N120H2
IGB03N120H2
1.0mJ
0.5mJ
0.0mJ
1) Eon and Ets include losses
1) Eon and Ets include losses
1
Ets
0.7mJ
0.6mJ
0.5mJ
0.4mJ
0.3mJ
0.2mJ
due to diode recovery.
1
Ets
due to diode recovery.
Eoff
1
Eon
Eoff
1
Eon
0Ω
50Ω
100Ω 150Ω 200Ω 250Ω
0A
2A
4A
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C,
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E )
VCE = 800V, VGE = +15V/0V, RG = 82Ω,
dynamic test circuit in Fig.E )
0.5mJ
1) Eon and Ets include losses
1
IC=3A, TJ=150°C
Ets
0.16mJ
due to diode recovery.
0.4mJ
0.3mJ
0.12mJ
IC=3A, TJ=25°C
0.08mJ
Eoff
IC=1A, TJ=150°C
1
Eon
0.2mJ
0.04mJ
IC=1A, TJ=25°C
0.1mJ
0.00mJ
0V/us
1000V/us
2000V/us
3000V/us
25°C
80°C
125°C
150°C
dv/dt, VOLTAGE SLOPE
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82Ω,
dynamic test circuit in Fig.E )
Figure 16. Typical turn off switching energy
loss for soft switching
(dynamic test circuit in Fig. E)
7
Rev. 2, Mar-04
Power Semiconductors
IGP03N120H2,
IGW03N120H2
IGB03N120H2
20V
15V
10V
5V
D=0.5
100K/W
0.2
0.1
UCE=240V
0.05
-1
10 K/W
R , ( K / W )
1.082517
0.328671
0.588811
τ , ( s )
0.000795
0.000179
0.004631
UCE=960V
0.02
0.01
R1
R2
-2
10 K/W
single pulse
10µs
C1=τ1/R1 C2=τ2/R2
100µs 1ms 10ms
0V
0nC
10nC
20nC
30nC
1µs
100ms
QGE, GATE CHARGE
QGE, GATE CHARGE
Figure 17. Typical gate charge
Figure 17. Typical gate charge
(IC = 3A)
(IC = 3A)
1nF
1000V
3A
2A
1A
0A
800V
600V
400V
200V
0V
Ciss
100pF
Coss
10pF
Crss
0V
10V
20V
30V
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VCE, COLLECTOR-EMITTER VOLTAGE
tp, PULSE WIDTH
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
Figure 20. Typical turn off behavior, hard
switching
(VGE=15/0V, RG=82Ω, Tj = 150°C,
Dynamic test circuit in Figure E)
8
Rev. 2, Mar-04
Power Semiconductors
IGP03N120H2,
IGW03N120H2
IGB03N120H2
3A
2A
1A
0A
800V
600V
400V
200V
0V
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
tp, PULSE WIDTH
Figure 21. Typical turn off behavior, soft
switching
(VGE=15/0V, RG=82Ω, Tj = 150°C,
Dynamic test circuit in Figure E)
9
Rev. 2, Mar-04
Power Semiconductors
IGP03N120H2,
IGW03N120H2
IGB03N120H2
dimensions
[mm]
TO-220AB
symbol
[inch]
min
9.70
14.88
0.65
3.55
2.60
6.00
13.00
4.35
0.38
0.95
max
10.30
15.95
0.86
3.89
3.00
6.80
14.00
4.75
0.65
1.32
min
max
A
B
C
D
E
F
0.3819
0.5858
0.0256
0.1398
0.1024
0.2362
0.5118
0.1713
0.0150
0.0374
0.4055
0.6280
0.0339
0.1531
0.1181
0.2677
0.5512
0.1870
0.0256
0.0520
G
H
K
L
M
N
P
T
2.54 typ.
0.1 typ.
4.30
4.50
1.40
2.72
0.1693
0.0461
0.0906
0.1772
0.0551
0.1071
1.17
2.30
TO-263AB (D2Pak)
dimensions
symbol
[mm]
[inch]
min
9.80
0.70
1.00
1.03
max
10.20
1.30
1.60
1.07
min
max
A
B
C
D
E
F
0.3858
0.0276
0.0394
0.0406
0.4016
0.0512
0.0630
0.0421
2.54 typ.
0.65 0.85
5.08 typ.
0.1 typ.
0.0256
0.0335
G
H
K
L
0.2 typ.
4.30
4.50
1.37
9.45
2.50
0.1693
0.0461
0.3563
0.0906
0.1772
0.0539
0.3720
0.0984
1.17
9.05
2.30
M
N
P
Q
R
S
T
15 typ.
0.5906 typ.
0.00
4.20
0.20
5.20
0.0000
0.1654
0.0079
0.2047
8° max
8° max
2.40
0.40
3.00
0.60
0.0945
0.0157
0.1181
0.0236
U
V
W
X
Y
Z
10.80
1.15
6.23
4.60
9.40
16.15
0.4252
0.0453
0.2453
0.1811
0.3701
0.6358
10
Rev. 2, Mar-04
Power Semiconductors
IGP03N120H2,
IGW03N120H2
IGB03N120H2
dimensions
TO-247AC
symbol
[mm]
symbol
min
min
4.78
2.29
1.78
1.09
A
B
C
D
E
F
A
B
C
D
4.78
2.29
1.78
1.09
A
B
C
D
1.73
E
2.67
F
G
H
K
L
2.67
F
G
H
K
L
G
H
K
L
0.76 max
20.80
15.65
5.21
0.76 max
20.80
15.65
5.21
M
N
P
Q
19.81
3.560
3.61
M
N
19.81
3.560
3.61
M
N
P
P
6.12
Q
6.12
Q
dimensi
ons
dimensi
ons
symbol
[mm]
min
symbol
[mm]
min
symbol
11
Rev. 2, Mar-04
Power Semiconductors
IGP03N120H2,
IGW03N120H2
IGB03N120H2
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
tF
t
QS
10% Ir r m
QF
Ir r m
dir r /dt
90% Ir r m
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r 2
τn
r1
r n
T (t)
j
p(t)
r 2
r1
rn
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
½ Lσ
öö
DUT
L
Cσ
Cr
(Diode)
VDC
RG
DUT
(IGBT)
½ Lσ
Figure E. Dynamic test circuit
Leakage inductance Lσ = 180nH,
Stray capacitor Cσ = 40pF,
Relief capacitor Cr = 4nF (only for
ZVT switching)
Figure B. Definition of switching losses
12
Rev. 2, Mar-04
Power Semiconductors
IGP03N120H2,
IGW03N120H2
IGB03N120H2
Published by
Infineon Technologies AG i Gr.,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
13
Rev. 2, Mar-04
Power Semiconductors
相关型号：
©2020 ICPDF网 联系我们和版权申明