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元器件品牌
PTFA240451E
[INFINEON]
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420-2480 MHz; 热增强型高功率射频LDMOS FET 45 W， 2420年至二四八〇年兆赫
元器件型号：
PTFA240451E
生产厂家：
INFINEON TECHNOLOGIES AG
描述和应用：
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420-2480 MHz
热增强型高功率射频LDMOS FET 45 W， 2420年至二四八〇年兆赫
晶体 射频场效应晶体管 CD 放大器 局域网
PDF文件：
总10页 (文件大小：191K)
下载文档：
下载PDF数据表文档文件
型号参数：PTFA240451E参数
查看货源
PTFA240451EV1
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, H-30265, 2 PIN
Warning
: Undefined variable $rtag in
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156
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0
INFINEON
PTFA240451F
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, H-31265, 2 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
PTFA241301E
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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22
INFINEON
PTFA241301F
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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17
INFINEON
PTFA241301FV1
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 â 2480 MHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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18
INFINEON
PTFA260451E
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
29
INFINEON
PTFA260451F
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-31265, 2 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
PTFA260851E
Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
23
INFINEON
PTFA260851EV1
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
PTFA260851F
Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
19
INFINEON
PTFA261301E
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
15
INFINEON
PTFA261301EV1
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, H-30260-2, 2 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
PTFA261301F
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
20
INFINEON
PTFA261702E
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 - 2700 MHz
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
15
INFINEON
PTFA261702EV1
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
INFINEON
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