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PTFA240451EV1 [INFINEON]

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, H-30265, 2 PIN;

PTFA240451EV1


元器件型号：	PTFA240451EV1
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, H-30265, 2 PIN 局域网放大器 CD 晶体管
PDF文件：	总10页 (文件大小：185K)
下载文档：	下载PDF数据表文档文件
型号参数：PTFA240451EV1参数

PTFA240451F

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, H-31265, 2 PIN

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0 INFINEON

PTFA241301E

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz

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22 INFINEON

PTFA241301F

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz

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17 INFINEON

PTFA241301FV1

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 â 2480 MHz

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18 INFINEON

PTFA260451E

Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz

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29 INFINEON

PTFA260451F

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-31265, 2 PIN

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0 INFINEON

PTFA260851E

Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz

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23 INFINEON

PTFA260851EV1

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 INFINEON

PTFA260851F

Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz

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19 INFINEON

PTFA261301E

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz

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15 INFINEON

PTFA261301EV1

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, H-30260-2, 2 PIN

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0 INFINEON

PTFA261301F

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz

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20 INFINEON

PTFA261702E

Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 - 2700 MHz

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15 INFINEON

PTFA261702EV1

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 INFINEON

PTFAM1301A

Plug Type Fixed Attenuator

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8 OPLINK

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