OM6524STV [INFINEON]
Insulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel, TO-257AA, HERMETIC SEALED, METAL PACKAGE-3;
| 型号： | OM6524STV |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel, TO-257AA, HERMETIC SEALED, METAL PACKAGE-3 局域网 栅 功率控制 晶体管 |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OM6524ST
OM6525SA
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC PACKAGE
1000 Volt, 8 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
• Isolated IGBTs In A Hermetic Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• High Switching Speed
• Low Tail Current
• Available With Free Wheeling Diode
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3Ø motors, UPS and high
power SMPS.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
PART
IC (Cont.)
@ 90°C, A
V(BR)CES
V
VCE (sat) (Typ.)
V
Tf (Typ.)
ns
qJC
PD
W
TJ
°C
NUMBER
°C/W
3.1
OM6524ST
OM6525SA
8
8
1000
1000
4.0
4.0
300
300
2.8
2.8
45
45
150
150
SCHEMATICS
MECHANICAL OUTLINES
.200
.545
.190
.420
.410
Collector
.050
.040
.535
.144 DIA.
Collector
.045
.035
.665
.645
.150
.140
.800
.790
.685
.665
.537
.527
.550
.530
.430
.410
1
2 3
Gate
Gate
C E G
1
2
3
.038 MAX.
.005
C
E
G
Emitter
.750
.500
Emitter
OM6524ST
.550
.510
.005
OM6525SA (with Diode)
.045
.035
.150 TYP.
.260
.249
.120 TYP.
.100 TYP.
.035
.025
.150 TYP.
OM6524ST
OM6525SA
PACKAGE OPTIONS
NOTE: IGBTs are also available in Z-Tab, dual and quad
pak styles - Please call the factory for more information.
6 PIN SIP
MOD PAK
4 11 R
Supersedes 2 07 R1
3.1 - 161
PRELIMINARY DATA: OM6524ST
IGBT CHARACTERISTICS
PRELIMINARY DATA: OM6525SA
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
Parameter - OFF (see Note 1)
V(BR)CES Collector Emitter
Breakdown Voltage
Min. Typ. Max. Units Test Conditions
V(BR)CES Collector Emitter
Breakdown Voltage
1000
V
VCE = 0
C = 100 µA
0.25 mA VCE = Max. Rat., VGE = 0
1.0 mA CE = 0.8 Max. Rat., VGE = 0
C = 125°C
±100 nA VGE = ±20 V
CE = 0 V
1000
V
VCE = 0
C = 100 µA
0.25 mA VCE = Max. Rat., VGE = 0
1.0 mA CE = 0.8 Max. Rat., VGE = 0
C = 125°C
±100 nA VGE = ±20 V
CE = 0 V
I
I
ICES
Zero Gate Voltage
Drain Current
ICES
Zero Gate Voltage
Drain Current
V
V
025Craw
T
T
IGES
Gate Emitter Leakage
Current
IGES
Gate Emitter Leakage
Current
V
V
o
S
Parameter - ON
Parameter - ON
VGE(th) Gate Threshold Voltage
VCE(sat) Collector Emitter
Saturation Voltage
4.5
1.7
6.5
V
V
VCE = VGE, IC = 250 µA
VGE = 15 V, IC = 5 A
VGE(th) Gate Threshold Voltage
VCE(sat) Collector Emitter
Saturation Voltage
4.5
1.7
6.5
V
V
VCE = VGE, IC = 250 µA
VGE = 15 V, IC = 5 A
e
,
3.0
3.0
T
C = 25°C
VGE = 15 V, IC = 5 A
C = 125°C
T
C = 25°C
VGE = 15 V, IC = 5 A
C = 125°C
VCE(sat) Collector Emitter
Saturation Voltage
4.0 4.5
V
VCE(sat) Collector Emitter
Saturation Voltage
4.0 4.5
V
nitsr,eAM10
T
T
Dynamic
Dynamic
gfs
Forward Transductance
Input Capacitance
S
VCE = 20 V, IC = 5 A
gfs
Forward Transductance
Input Capacitance
S
VCE = 20 V, IC = 5 A
Cies
Coes
Cres
650
50
pF VGE = 0
Cies
Coes
Cres
650
50
pF VGE = 0
35USA(0
Output Capacitance
pF VCE = 25 V
pF f = 1 mHz
Output Capacitance
pF VCE = 25 V
pF f = 1 mHz
Reverse Transfer Capacitance
20
Reverse Transfer Capacitance
20
Switching-Resistive Load
Switching-Resistive Load
)8354
Td(on)
tr
Turn-On Time
Rise Time
50
nS VCC = 600 V, IC = 5 A
nS VGE = 15 V, Rg = 3.3 ,
nS Tj = 125°C
Td(on)
tr
Turn-On Time
Rise Time
50
nS VCC = 600 V, IC = 5 A
nS Vge = 15 V, Rg = 3.3 ,
nS Tj = 125°C
200
200
300
200
200
300
5-7
Td(off)
tf
Turn-Off Delay Time
Fall Time
Td(off)
tf
Turn-Off Delay Time
Fall Time
67FXA(5)0835-426
nS
nS
Switching-Inductive Load
Switching-Inductive Load
Td(off)
tf
Turn-Off Delay Time
Fall Time
200
200
.60
nS VCEclamp = 600 V, IC = 5 A
nS VGE = 15 V, Rg = 3.3
mWs L = 1 mH, Tj = 125°C
Td(off)
tf
Turn-Off Delay Time
Fall Time
200
200
.60
nS VCEclamp = 600 V, IC = 5 A
nS Vge = 15 V, Rg = 3.3
Eoff
Turn-Off Losses
Eoff
Turn-Off Losses
mWs L = 1 mH, Tj = 125°C
DIODE CHARACTERISTICS
Vf
Ir
Maximum Forward Voltage
Maximum Reverse Current
Reverse Recovery Time
3.3
2.2
V
V
IF = 12 A, TC = 25°C
IF = 12 A, TC = 150°C
500 µA VR = 1000 V, TC = 25°C
4.0 mA R = 800 V, TC = 125°C
35 nS IF = 1 A, di / dt = -15 A µ/S
R = 30 V, Tj = 25°C
V
trr
V
Note 1: Limited by diode Ir characteristic.
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