OM6529SSV [INFINEON]
Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL, SIP-6;
| 型号： | OM6529SSV |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL, SIP-6 局域网 栅 功率控制 晶体管 |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OM6529SS
OM6530SS
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC ISOLATED SIP PACKAGE
1000 Volt, 15 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
• Two Isolated IGBTs In A Hermetic SIP Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• High Switching Speed
• Low Tail Current
• Available With Free Wheeling Diodes
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3Ø motors, UPS and high
power SMPS.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
PART
IC (Cont.)
@ 90°C, A
V(BR)CES
V
VCE (sat) (Typ.)
V
Tf (Typ.)
ns
qJC
PD
W
TJ
°C
NUMBER
°C/W
OM6529SS
OM6530SS
15
15
1000
1000
4.0
4.0
300
300
1.50
1.50
85
85
150
150
3.1
SCHEMATIC
MECHANICAL OUTLINE
OM6529SS
1.375
.770
.040
.302
.118
.265
.487
.150 DIA.
THRU 2
PLACES
.752
REF.
C
C
1
2
3
4
5
6
E
G
G
E
C
E
G
G
E
C
OM6530SS (with Diode)
.500
MIN.
.140 TYP.
.200 TYP.
.188
REF.
1.000
.270
MAX.
.060 DIA.TYP.
6 PLACES
C
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
Pin 4: Gate
Pin 5: Emitter
Pin 6: Collector
E
G
G
E
C
PACKAGE OPTIONS
IGBTs are also available in Z-Tab, dual and quad pak styles -
Please call the factory for more information.
MOD-PAK
4 11 R2
Supersedes 2 07 R1
3.1 - 165
PRELIMINARY DATA: OM6529SS
IGBT CHARACTERISTICS
PRELIMINARY DATA: OM6530SS
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
Parameter - OFF (see Note 1)
V(BR)CES Collector Emitter
Breakdown Voltage
Min. Typ. Max. Units Test Conditions
V(BR)CES Collector Emitter
Breakdown Voltage
1000
V
VCE = 0
C = 150 µA
150 µA VCE = Max. Rat., VGE = 0
700 µA CE = 0.8 Max. Rat., VGE = 0
C = 125°C
±100 nA VGE = ±20 V
CE = 0 V
1000
V
VCE = 0
C = 150 µA
150 µA VCE = Max. Rat., VGE = 0
700 µA CE = 0.8 Max. Rat., VGE = 0
C = 125°C
±100 nA VGE = ±20 V
CE = 0 V
I
I
ICES
Zero Gate Voltage
Drain Current
ICES
Zero Gate Voltage
Drain Current
V
V
025Craw
T
T
IGES
Gate Emitter Leakage
Current
IGES
Gate Emitter Leakage
Current
V
V
o
S
Parameter - ON
Parameter - ON
VGE(th) Gate Threshold Voltage
VCE(sat) Collector Emitter
Saturation Voltage
4.5
3.5
6.5
V
V
VCE = VGE, IC = 700 µA
VGE = 15 V, IC = 10 A
VGE(th) Gate Threshold Voltage
VCE(sat) Collector Emitter
Saturation Voltage
4.5
3.5
6.5
V
V
VCE = VGE, IC = 700 µA
VGE = 15 V, IC = 10 A
e
,
3.0
3.0
T
C = 25°C
VGE = 15 V, IC = 10 A
C = 125°C
T
C = 25°C
VGE = 15 V, IC = 10 A
C = 125°C
VCE(sat) Collector Emitter
Saturation Voltage
4.0 4.5
V
VCE(sat) Collector Emitter
Saturation Voltage
4.0 4.5
V
nitsr,eAM10
T
T
Dynamic
Dynamic
gfs
Forward Transductance
Input Capacitance
S
VCE = 20 V, IC = 10 A
gfs
Forward Transductance
Input Capacitance
S
VCE = 20 V, IC = 10 A
Cies
Coes
Cres
1300
100
50
pF VGE = 0
Cies
Coes
Cres
1300
100
50
pF VGE = 0
35USA(0
Output Capacitance
pF VCE = 25 V
pF f = 1 mHz
Output Capacitance
pF VCE = 25 V
pF f = 1 mHz
Reverse Transfer Capacitance
Reverse Transfer Capacitance
Switching-Resistive Load
Switching-Resistive Load
)8354
Td(on)
tr
Turn-On Time
Rise Time
50
nS VCC = 600 V, IC = 10 A
nS VGE = 15 V, Rg = 3.3 ,
nS Tj = 125°C
Td(on)
tr
Turn-On Time
Rise Time
50
nS VCC = 600 V, IC = 10 A
nS VGE = 15 V, Rg = 3.3 ,
nS Tj = 125°C
200
200
300
200
200
300
5-7
Td(off)
tf
Turn-Off Delay Time
Fall Time
Td(off)
tf
Turn-Off Delay Time
Fall Time
67FXA(5)0835-426
nS
nS
Switching-Inductive Load
Switching-Inductive Load
Td(off)
tf
Turn-Off Delay Time
Fall Time
200
200
1.1
nS VCEclamp = 600 V, IC = 10 A
nS VGE = 15 V, Rg = 3.3
Td(off)
tf
Turn-Off Delay Time
Fall Time
200
200
1.1
nS VCEclamp = 600 V, IC = 10 A
nS VGE = 15 V, Rg = 3.3
Eoff
Turn-Off Losses
mWs L = 1 mH, Tj = 125°C
Eoff
Turn-Off Losses
mWs L = 1 mH, Tj = 125°C
DIODE CHARACTERISTICS
Vf
Ir
Maximum Forward Voltage
Maximum Reverse Current
Reverse Recovery Time
1.85
1.70
V
V
IF = 30 A, TC = 25°C
IF = 30 A, TC = 150°C
500 µA VR = 1000 V, TC = 25°C
7.0 mA R = 800 V, TC = 125°C
50 nS IF = 1 A, di / dt = -15 A µ/S
R = 30 V, Tj = 25°C
V
trr
V
Note 1: Limited by diode Ir characteristic.
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