IRLS3813PBF [INFINEON]
Power Field-Effect Transistor,;
| 型号： | IRLS3813PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：492K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRLS3813PbF
HEXFET® Power MOSFET
Application
VDSS
30V
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
RDS(on) typ.
1.60m
1.95m
247A
max
ID (Silicon Limited)
ID (Package Limited)
160A
D
S
G
Benefits
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
D
S
Gate
Drain
Source
Standard Pack
Base part number
Package Type
Orderable Part Number
Form
Tube
Quantity
50
IRLS3813PbF
IRLS3813PbF
D2-Pak
Tape and Reel Left
800
IRLS3813TRLPbF
Absolute Maximum Rating
Symbol
Parameter
Max.
30
247
156
Units
V
VDS
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
160
850
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
195
1.6
W
W/°C
V
VGS
TJ
Gate-to-Source Voltage
± 20
Operating Junction and
-55 to + 150
300
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
Symbol
EAS (Thermally limited)
IAR
Max.
177
148
Units
mJ
A
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Thermal Resistance
Symbol
Parameter
Typ.
–––
–––
Max.
0.64
40
Units
Junction-to-Case
RJC
RJA
°C/W
Junction-to-Ambient (PCB Mount)
1
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IRLS3813PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
30
–––
23
–––
V
VGS = 0V, ID = 250µA
–––
–––
1.35
–––
––– mV/°C Reference to 25°C, ID = 1mA
V(BR)DSS/TJ
RDS(on)
1.60 1.95
––– 2.35
VGS = 10V, ID = 148A
m
V
VGS(th)
VDS = VGS, ID = 150µA
–––
–––
–––
––– -100
0.9 –––
1
V
DS =30V, VGS = 0V
VDS =30V,VGS = 0V,TJ =125°C
GS = 20V
VGS = -20V
IDSS
Drain-to-Source Leakage Current
µA
–––
–––
–––
–––
100
100
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
V
IGSS
RG
nA
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
428
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
55
28
11
32
–––
83
S
V
DS = 10V, ID =148A
ID = 148A
nC VDS = 15V
–––
–––
–––
–––
–––
–––
V
GS = 4.5V
DD = 20V
V
202
33
ID = 148A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG= 4.5
102
VGS = 4.5V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
8020 –––
1250 –––
570
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
–––
pF
Coss eff.(ER)
Coss eff.(TR)
Effective Output Capacitance (Energy Related)
Output Capacitance (Time Related)
–––
–––
1560 –––
1750 –––
VGS = 0V, VDS = 0V to 24V
VGS = 0V, VDS = 0V to 24V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Continuous Source Current
(Body Diode)
IS
–––
––– 247
––– 850
A
Pulsed Source Current
(Body Diode)
ISM
–––
–––
VSD
Diode Forward Voltage
–––
1.3
V
TJ= 25°C,IS = 148A,VGS = 0V
dv/dt
Peak Diode Recovery dv/dt
–––
–––
2.2
32
–––
–––
V/ns TJ = 150°C,IS =148A,VDS = 30V
TJ = 25°C
VDD = 26V
IF = 148A,
trr
Reverse Recovery Time
ns
–––
–––
–––
33
24
26
–––
–––
–––
TJ = 125°C
TJ = 25°C di/dt = 100A/µs
TJ = 125°C
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
IRRM
–––
1.2
–––
TJ = 25°C
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A by source
bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 16µH, RG = 50, IAS = 148A, VGS =10V.
ISD 148A, di/dt 865A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
.
R is measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Pulse drain current is limited at 640A by source bonding technology.
2
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IRLS3813PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
TOP
TOP
BOTTOM
BOTTOM
2.5V
60µs PULSE WIDTH
2.5V
60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 148A
= 10V
D
V
GS
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
60µs PULSE WIDTH
1.0
1
2
3
4
5
6
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14
V
C
= 0V,
f = 1 MHZ
GS
I
= 148A
= C + C , C SHORTED
D
iss
gs
gd ds
12
10
8
C
= C
rss
gd
V
V
= 24V
= 15V
C
= C + C
DS
DS
oss
ds
gd
C
iss
C
oss
6
C
rss
4
2
100
0
0.1
1
10
100
0
40
Q , Total Gate Charge (nC)
G
80
120
160
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
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IRLS3813PbF
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
1000
100
10
DS
T
= 150°C
J
100µsec
1msec
T
= 25°C
J
Limited by Package
DC
1
1
Tc = 25°C
10msec
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1
10
0.0
0.4
0.8
1.2
1.6
2.0
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
36
280
Id = 1.0mA
Limited by Package
240
35
34
33
32
31
30
200
160
120
80
40
0
-60 -40 -20
0
T
20 40 60 80 100 120 140 160
, Temperature ( °C )
25
50
75
100
125
150
T
, Case Temperature (°C)
J
C
Fig 10. Drain-to–Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
800
0.6
I
D
TOP
17A
38A
BOTTOM 148A
0.5
0.4
0.3
0.2
0.1
0.0
600
400
200
0
25
50
75
100
125
150
0
5
10
15
20
25
30
Starting T , Junction Temperature (°C)
J
V
Drain-to-Source Voltage (V)
DS,
Fig 11. Typical Coss Stored Energy
Fig 12. Maximum Avalanche Energy Vs. Drain Current
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IRLS3813PbF
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Single Avalanche Current vs. pulse Width
5
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IRLS3813PbF
6
5
4
3
2
1
0
3.0
2.5
2.0
1.5
1.0
0.5
I
= 148A
D
T
= 125°C
J
I
= 150µA
= 250µA
= 1.0mA
D
I
D
I
D
ID = 1A
T
= 25°C
J
2
4
6
8
10 12 14 16 18 20
-75 -50 -25
0
25 50 75 100 125 150
T , Temperature ( °C )
V
Gate -to -Source Voltage (V)
J
GS,
Fig 15. Typical On-Resistance vs. Gate Voltage
Fig 16. Threshold Voltage vs. Temperature
6
5
I
= 99A
= 26V
I
= 148A
V = 26V
R
F
F
V
R
5
4
3
2
1
T = 25°C
T = 25°C
J
J
4
3
2
1
T = 125°C
J
T = 125°C
J
0
100
200
300
400
500
600
0
100
200
300
400
500
600
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig 18. Typical Recovery Current vs. dif/dt
Fig 17. Typical Recovery Current vs. dif/dt
90
140
I
= 148A
= 26V
F
I
= 99A
= 26V
F
80
70
60
50
40
30
20
V
R
V
120
100
80
R
T = 25°C
J
T = 25°C
J
T = 125°C
J
T = 125°C
J
60
40
20
0
100
200
300
400
500
600
0
100
200
300
400
500
600
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig 20. Typical Stored Charge vs. dif/dt
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Fig 19. Typical Stored Charge vs. dif/dt
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IRLS3813PbF
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 22a. Unclamped Inductive Test Circuit
Fig 22b. Unclamped Inductive Waveforms
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
VD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
Fig 24a. Gate Charge Test Circuit
7
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IRLS3813PbF
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
ASSEMBLY
LOT CODE
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRLS3813PbF
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
0.368 (.0145)
3.90 (.153)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Industrial
Qualification Level
D2Pak
MSL1
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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