IRKL57/04S90PBF [INFINEON]
Silicon Controlled Rectifier, 135A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-240AA;型号: | IRKL57/04S90PBF |
厂家: | Infineon |
描述: | Silicon Controlled Rectifier, 135A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-240AA 局域网 栅 栅极 |
文件: | 总10页 (文件大小:165K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I27131 rev. C 09/97
IRK.41, .56 SERIES
NEWADD-A-pakTM Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
45 A
60 A
Electrically isolated: DBC base plate
3500 VRMS isolating voltage
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
Description
These IRK series of NEW ADD-A-paks use power
diodes and thyristors in a variety of circuit configura-
tions. The semiconductor chips are electrically iso-
lated from the base plate, allowing common heatsinks
and compact assemblies to be built. They can be
interconnected to form single phase or three phase
bridges or AC controllers. These modules are intended
for general purpose high voltage applications such as
high voltage regulated power supplies, lighting
circuits, and temperature and motor speed control
circuits.
Major Ratings and Characteristics
Parameters IRK.41
IRK.56
Units
IT(AV)or IF(AV)
45
60
A
A
@85°C
IO(RMS) (*)
100
135
ITSM @50Hz
IFSM @60Hz
850
890
1310
1370
A
A
2
2
I t @50Hz
3.61
8.50
KA s
2
@60Hz
3.30
36.1
7.82
85.0
KA s
2
2
I √t
KA √s
VRRM range
400to1600
V
o
TSTG
-40to125
-40to125
C
o
TJ
C
(*) As AC switch.
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1
IRK.41, .56 Series
Bulletin I27131 rev. C 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
peak reverse voltage peak reverse voltage
VRSM , maximum
non-repetitive
VDRM , max. repetitive IRRM
peak off-state voltage, IDRM
Voltage
Type number
Code
gate open circuit
125°C
mA
-
V
V
V
04
06
08
400
500
400
600
700
600
800
900
800
IRK.41/ .56
10
12
14
16
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
On-state Conduction
Parameters
IRK.41
IRK.56
Units
Conditions
IT(AV) Max. average on-state
current (Thyristors)
45
45
60
60
180o conduction, half sine wave,
TC =85oC
IF(AV) Maximum average
forward current (Diodes)
IO(RMS) Max. continuous RMS
on-state current.
100
135
or
I(RMS)
I(RMS)
As AC switch
A
ITSM
or
Max. peak, one cycle
non-repetitive on-state
or forward current
850
890
715
750
940
985
3.61
3.30
2.56
2.33
4.42
4.03
1310
1370
1100
1150
1450
1520
8.56
7.82
6.05
5.53
10.05
9.60
t=10ms No voltage
Sinusoidal
half wave,
Initial TJ = TJ max.
t=8.3ms reapplied
t=10ms 100% VRRM
t=8.3ms reapplied
t=10ms TJ = 25oC,
IFSM
t=8.3ms no voltage reapplied
t=10ms No voltage
I2t
Max. I2t for fusing
t=8.3ms reapplied
Initial TJ = TJ max.
t=10ms 100% VRRM
t=8.3ms reapplied
t=10ms TJ = 25oC,
KA2s
t=8.3ms no voltage reapplied
I2√t
Max. I2√t for fusing (1)
36.1
0.88
0.91
5.90
5.74
85.6
0.85
0.88
3.53
3.41
KA2√s
t=0.1 to 10ms, no voltage reapplied
TJ = TJ max
VT(TO) Max. value of threshold
voltage (2)
Low level (3)
High level (4)
V
TJ = TJ max
TJ =25oC
r
Max. value of on-state
slope resistance (2)
Max. peak on-state or
Low level (3)
High level (4)
ITM=π x IT(AV)
t
mΩ
VTM
VFM
1.81
1.54
V
forward voltage
IFM=π x IF(AV)
di/dt Max. non-repetitive rate
of rise of turned on
T = 25oC, from 0.67 VDRM
,
ITJM =π x I T(AV), I = 500mA,
g
150
A/µs
mA
current
t < 0.5 µs, t > 6 µs
r
p
TJ = 25oC, anode supply = 6V,
resistive load, gate open circuit
TJ = 25oC, anode supply = 6V,resistive load
2
IH
IL
Max. holding current
Max. latching current
200
400
(1) I2t for time tx = I2√t x √tx
(4) I > π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
(3) 16.7% x π x IAV < I < π x IAV
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2
IRK.41, .56 Series
Bulletin I27131 rev. C 09/97
Triggering
Parameters
IRK.41
10
IRK.56
10
Units
Conditions
PGM Max. peak gate power
W
A
PG(AV) Max. average gate power
2.5
2.5
IGM
Max. peak gate current
2.5
2.5
-VGM Max. peak negative
gate voltage
10
4.0
2.5
1.7
TJ=-40°C
TJ= 25°C
TJ= 125°C
V
VGT Max. gate voltage
required to trigger
Anodesupply=6V
resistive load
270
150
80
TJ=-40°C
TJ= 25°C
Anodesupply=6V
resistive load
IGT
Max. gate current
required to trigger
mA
TJ =125°C
TJ= 125oC,
rated VDRM applied
TJ= 125oC,
rated VDRM applied
VGD Max. gate voltage
that will not trigger
0.25
6
V
IGD
Max. gate current
that will not trigger
mA
Blocking
Parameters
IRK.41
IRK.56
Units
mA
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
15
TJ = 125 oC, gate open circuit
2500 (1 min)
3500 (1 sec)
50 Hz, circuit to base, all terminals
shorted
VINS RMS isolation voltage
V
dv/dt Max. critical rate of rise
of off-state voltage (5)
TJ = 125oC, linear to 0.67 VDRM
gate open circuit
,
500
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT41/16 S90.
Thermal and Mechanical Specifications
Parameters
IRK.41
IRK.56
Units
°C
Conditions
TJ
T
Junction operating
temperature range
Storage temp. range
- 40 to 125
- 40 to 125
stg
RthJC Max. internal thermal
resistance, junction
to case
0.23
0.20
Per module, DC operation
K/W
Nm
RthCS Typical thermal resistance
case to heatsink
Mountingsurfaceflat,smoothandgreased.
Flatness<0.03mm;roughness< 0.02mm
0.1
T
Mounting torque ± 10%
to heatsink
Amountingcompoundisrecommended
andthetorqueshouldberecheckedaftera
periodof3hourstoallowforthespreadof
thecompound
5
3
busbar
wt
Approximate weight
83 (3)
g (oz)
Case style
TO-240AA
JEDEC
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3
IRK.41, .56 Series
Bulletin I27131 rev. C 09/97
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
Units
°C/W
180o
0.11
0.09
120o
0.13
0.11
90o
60o
30o
180o
0.09
0.07
120o
0.14
0.11
90o
60o
30o
IRK.41
IRK.56
0.17
0.13
0.23
0.18
0.34
0.27
0.18
0.14
0.23
0.19
0.34
0.28
Outlines Table
IRKT../.. (*)
Screws M5 x 0.8
IRKH../.. (*)
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
15.5 ± 0.5
(0.61 ± 0.02)
18 REF.
(0.71)
Screws M5 x 0.8
Faston tab. 2.8 x 0.8
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
(0.11 x 0.03)
6.3 ± 0.3
6.3 ± 0.3
(0.25 ± 0.01)
(0.25 ± 0.01)
20 ± 0.5
20 ± 0.5
(0.79 ± 0.02)
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
92 ± 0.5
(3.62 ± 0.02)
IRKL../.. (*)
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
Screws M5 x 0.8
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
6.3 ± 0.3
(0.25 ± 0.01)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
All dimensions in millimeters (inches)
(*) For terminals connections, see Circuit configurations Table
NOTE: To order the Optional Hardware see Bulletin I27900
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4
IRK.41, .56 Series
Bulletin I27131 rev. C 09/97
Circuit Configurations Table
IRKT
IRKH
(1)
IRKL
(1)
~
(1)
~
~
+
(2)
+
(2)
+
(2)
-
(3)
-
(3)
-
(3)
K2 G2
(7) (6)
G1
(4) (5)
G1 K1
(4) (5)
K1
K2 G2
(7) (6)
Ordering Information Table
Device Code
IRK
T
56
/
16 S90
IRK.57 types
With no auxiliary cathode
3
4
1
2
5
13.8 (0.53)
1
2
3
4
5
-
-
-
-
-
Moduletype
Circuitconfiguration(SeeCircuitConfigurationtable)
Current code* *
* *
Available with no auxiliary cathode.
To specify change: 41 to 42
56 to 57
Voltagecode (See Voltage Ratings table)
dv/dt code:
S90 = dv/dt 1000 V/µs
e.g. : IRKT57/16 etc.
No letter = dv/dt 500 Vµs
130
120
110
100
90
130
120
110
100
90
IRK.41.. Se rie s
IRK.41.. Se rie s
R
(DC) = 0.46 K/W
R
(DC ) = 0.46 K/ W
thJC
thJC
C o nd uc tio n Ang le
C o nd uc tio n Pe rio d
30°
60°
30°
60°
90°
90°
120°
120°
180°
180°
DC
60
80
80
0
10
Ave ra g e On-sta te C urre nt (A)
Fig. 1 - Current Ratings Characteristics
20
30
40
50
0
20
40
80
Ave ra g e O n-sta te C urre nt (A)
Fig. 2 - Current Ratings Characteristics
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5
IRK.41, .56 Series
Bulletin I27131 rev. C 09/97
70
100
80
60
40
20
0
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
60
50
RMS Limit
RMS Lim it
40
30
20
10
0
C o nd uc tio n An g le
C o nd uc tio n Pe rio d
IRK.41.. Se rie s
Pe r Junc tion
T = 125°C
IRK.41.. Se ries
Pe r Jun ctio n
= 125°C
T
J
J
0
10
20
30
40
50
0
20
Ave ra g e On -sta te C urre n t (A)
Fig. 4 - On-state Power Loss Characteristics
40
60
80
Ave ra g e O n-sta te Curre nt (A)
Fig. 3 - On-state Power Loss Characteristics
800
700
600
500
400
300
900
At Any Ra te d Loa d Cond itio n And With
Ma xim um No n Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion. Co ntrol
Of Co nd uc tio n Ma y No t Be Ma inta ine d.
Ra te d V
Ap p lie d Fo llo wing Surg e .
RRM
In itia l T = 125°C
J
800
700
600
500
400
300
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.41.. Serie s
Per Junc tion
IRK.41.. Se rie s
Pe r Jun c tio n
1
10
100
0.01
0.1
1
Nu mb e r O f Eq ua l Amp litud e Ha lf Cyc le C urre nt Pulse s (N)
Pulse Tra in Dura tio n (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
140
180°
120°
0
.
7
120
K
/
W
90°
60°
30°
100
80
2
K
/
W
60
C onduc tion Ang le
40
IRK.41.. Se rie s
Pe r Mod ule
20
T
= 125°C
J
0
0
20
40
60
80
100
Ma xim um Allo wa b le Am b ie n t Te m p e ra ture (°C )
Fig. 7 - On-state Power Loss Characteristics
20
40
60
80
100 120 140
To ta l RMS Outp ut Curre nt (A)
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6
IRK.41, .56 Series
Bulletin I27131 rev. C 09/97
350
300
250
200
150
100
50
R
0
.
2
K
/
W
=
0
.
1
K
/
W
180°
(Sine )
180°
-
D
e
l
t
a
R
(Re c t)
0
.
7
K
/
W
1
K
/
W
2 x IRK.41.. Se rie s
Sin g le Pha se Brid g e
C o nn e c te d
1
.
5
K
/
W
T
= 125°C
J
0
0
20
40
60
80
100
20
40
60
80 100 120 140
To ta lO utp ut C urre nt (A)
Ma xim um Allo wa b le Amb ie nt Te m p e ra ture (°C )
Fig. 8 - On-state Power Loss Characteristics
500
450
400
350
300
250
200
150
100
50
R
=
0
.
1
K
/
W
-
D
e
0
.
l
t
a
3
120°
(Rec t)
K
/
R
W
0
.
7
K
/
W
3 x IRK.41.. Se ries
Thre e Pha se Brid g e
Co n ne c te d
T = 125°C
J
0
0
20
40
60
80
100 120 140
20
40
60
80
100 120 140
To ta l Outp ut Curre nt (A)
Ma xim um Allo wa b le Am b ien t Te mp e ra ture (°C)
Fig. 9 - On-state Power Loss Characteristics
130
120
110
100
90
130
120
110
100
90
IRK.56.. Se rie s
IRK.56.. Se rie s
R
(DC ) = 0.40 K/ W
R
(DC) = 0.40 K/ W
thJC
thJC
C o nd uc tio n Perio d
C o nd u ctio n Angle
30°
60°
90°
90°
80
120°
180°
80
60°
120°
DC
80
30°
20
180°
70
70
0
10
20
30
40
50
60
70
0
40
60
100
Ave ra g e O n-sta te C urre nt (A)
Fig. 10 - Current Ratings Characteristics
Ave ra g e O n-sta te C urre n t (A)
Fig. 11 - Current Ratings Characteristics
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7
IRK.41, .56 Series
Bulletin I27131 rev. C 09/97
90
120
100
80
60
40
20
0
180°
DC
180°
120°
90°
60°
30°
80
70
60
50
40
30
20
10
0
120°
90°
60°
30°
RMS Lim it
RMS Lim it
C ond uc tio n Perio d
C o nd uc tio n Ang le
IRK.56.. Se rie s
Pe r Junc tio n
IRK.56.. Serie s
Pe r Jun ct io n
T = 125°C
J
T
= 125°C
J
0
10
Avera g e O n-sta te Curre n t (A)
Fig. 12 - On-state Power Loss Characteristics
20
30
40
50
60
0
20
40
60
80
100
Ave ra g e O n-sta te C urre nt (A)
Fig. 13 - On-state Power Loss Characteristics
1200
1400
Ma xim um Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tio n. Contro l
Of Conduc tio n Ma y No t Be Ma inta ine d .
At Any Ra te d Loa d Condition And With
Ra te d V
Ap plie d Follo wing Surge .
RRM
1100
1000
900
Initia l T = 125°C
J
1200
1000
800
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Vo lta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
800
700
600
600
IRK.56.. Serie s
Per Junc tion
IRK.56.. Se rie s
Pe r Jun c tio n
500
400
0.01
1
10
100
0.1
1
Num b e r O f Eq ua l Amp litud e Ha lf Cyc le C urre nt Pulse s (N)
Pulse Tra in Dura tio n (s)
Fig. 15 - Maximum Non-Repetitive Surge Current
Fig. 14 - Maximum Non-Repetitive Surge Current
200
0
.
2
180°
K
180
/
W
120°
160
140
120
100
80
90°
60°
30°
0
1
.
7
K
/
W
K
/
W
Conduc tion Ang le
60
2
4
K
/
W
W
IRK.56.. Se rie s
Pe r Mod ule
40
K
/
20
T
= 125°C
J
0
0
20
40
60
80
100 120 140
Ma ximum Allo wa b le Amb ie nt Te m p e ra ture (°C)
Fig. 16 - On-state Power Loss Characteristics
20
40
60
80
100 120 140
Tota l RMS Outp ut Curre nt (A)
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8
IRK.41, .56 Series
Bulletin I27131 rev. C 09/97
450
400
350
300
250
200
150
100
50
0
.
2
K
/
W
180°
(Sine )
180°
(Re c t)
1
2
2 x IRK.56.. Se ries
Sin g le Pha se Brid g e
Con ne c te d
K
/
W
K
/ W
T
= 125°C
J
0
0
20
40
60
80
100 120 140
20
40
60
80
100 120 140
To ta l Outp ut Curre nt (A)
Ma xim um Allo wa b le Am b ie n t Te mp e ra ture (°C)
Fig. 17 - On-state Power Loss Characteristics
600
500
400
300
200
100
0
R
t
h
S
A
=
0
.
1
K
/
W
-
D
e
120°
(Re c t)
l
t
a
R
0
1
3 x IRK.56.. Se ries
Th re e Pha se Brid g e
Con ne c te d
. 7
K
/
W
K
/
W
T = 125°C
J
0
20 40 60 80 100 120 140 160 180
20
40
60
80
100 120 140
To ta l O utp ut Curre nt (A)
Ma ximum Allo w a b le Amb ie nt Te m p erat ure (°C)
Fig. 18 - On-state Power Loss Characteristics
1000
100
10
1000
100
10
T = 25°C
T = 25°C
J
J
T = 125°C
T = 125°C
J
J
IRK.56.. Se rie s
Pe r Junc tio n
IRK.41.. Se rie s
Pe r Junc tion
1
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
1
2
3
4
5
6
7
Insta n ta n e o us On -sta te Volta g e (V)
Fig. 19 - On-state Voltage Drop Characteristics
In sta nta ne o us O n-sta te Vo lta g e (V)
Fig. 20 - On-state Voltage Drop Characteristics
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9
IRK.41, .56 Series
Bulletin I27131 rev. C 09/97
500
110
100
90
I
= 200 A
IRK.41.. Se rie s
IRK.56.. Se rie s
TM
I
= 200 A
100 A
TM
450
T
= 125 °C
100 A
50 A
20 A
J
400
350
300
250
200
150
100
80
50 A
70
10 A
60
20 A
10 A
50
IRK.41.. Se rie s
IRK.56.. Se rie s
T = 125 °C
40
J
30
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te O f Fa ll Of Forwa rd C urre nt - d i/ d t (A/ µs)
Ra te Of Fa ll O f O n-sta te C urre n t - d i/ d t (A/ µs)
Fig. 21 - Recovery Charge Characteristics
Fig. 22 - Recovery Current Characteristics
1
Ste a d y Sta te Va lue :
R
R
= 0.46 K/ W
= 0.40 K/ W
thJC
thJC
(DC Op e ra tio n)
IRK.41.. Se rie s
IRK.56.. Se rie s
0.1
Pe r Junc tio n
0.01
0.001
0.01
0.1
Sq ua re Wa ve Pulse Dura tion (s)
1
10
Fig. 23 - Thermal Impedance ZthJC Characteristics
100
10
1
Rec ta ng ula r ga te p ulse
(1) PG M = 100 W, tp = 500 µs
a )Re c omm e nde d loa d line for
ra te d di/ d t: 20 V, 30 o hm s
tr = 0.5 µs, t p >= 6 µs
b)Re c om me nde d loa d line for
<= 30% ra te d d i/ dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(2) PG M = 50 W, tp = 1 ms
(3) PG M = 20 W, tp = 25 ms
(4) PG M = 10 W, tp = 5 ms
(a )
(b )
(4) (3) (2) (1)
VGD
IGD
0.01
IRK.41../.56.. Se rie s Fre q ue nc y Lim ite d b y PG(AV)
0.1 10 100
0.1
0.001
1
1000
In sta nta ne ous G a te C urre nt (A)
Fig. 24 - Gate Characteristics
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