IRKL57/06APBF [INFINEON]
Silicon Controlled Rectifier, 94.2A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-240AA, ADD-A-PAK-4;型号: | IRKL57/06APBF |
厂家: | Infineon |
描述: | Silicon Controlled Rectifier, 94.2A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-240AA, ADD-A-PAK-4 二极管 |
文件: | 总10页 (文件大小:234K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I27131 rev. G 10/02
IRK.41, .56 SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
ADD-A-pakTM GEN V Power Modules
Features
Benefits
High Voltage
Up to 1600V
45 A
60 A
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
UL E78996 approved
Al203 DBC insulator
Heatsink grounded
3500VRMS isolating voltage
Mechanical Description
The Generation V of Add-A-pak module combine the
excellentthermalperformanceobtainedbytheusageof
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solidCopperbaseplateatthebottomsideofthedevice.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltageapplicationssuchashighvoltageregulatedpower
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Major Ratings and Characteristics
Parameters IRK.41
IRK.56
Units
IT(AV)or IF(AV)
45
60
A
A
@ 85°C
IO(RMS) (*)
100
135
ITSM @50Hz
IFSM @60Hz
850
890
1310
1370
A
A
2
2
I t @50Hz
3.61
8.50
KA s
2
@60Hz
3.30
36.1
7.82
85.0
KA s
2
2
I √t
KA √s
V
RRM range
400 to 1600
V
TSTG
- 40 to 125
- 40 to125
oC
oC
TJ
(*) As AC switch.
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1
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
peak reverse voltage peak reverse voltage
VRSM , maximum
non-repetitive
VDRM , max. repetitive
peak off-state voltage,
gate open circuit
IRRM
IDRM
125°C
Voltage
Type number
Code
-
V
V
V
mA
04
06
08
400
500
400
600
700
600
800
900
800
IRK.41/ .56
10
12
14
16
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
On-state Conduction
Parameters
IRK.41
IRK.56
Units
Conditions
IT(AV) Max.average on-state
current (Thyristors)
45
45
60
60
180o conduction, half sine wave,
TC=85oC
IF(AV) Maximumaverage
forward current (Diodes)
IO(RMS Max.continuousRMS
)
on-state current.
As AC switch
100
135
or
I(RMS)
I(RMS)
A
ITSM
or
Max.peak,onecycle
non-repetitive on-state
or forward current
850
890
1310
1370
1100
1150
1450
1520
8.56
7.82
6.05
5.53
10.05
9.60
85.6
0.85
0.88
3.53
3.41
t=10ms No voltage
Sinusoidal
half wave,
InitialTJ =TJ max.
t=8.3ms reapplied
t=10ms 100%VRRM
t=8.3ms reapplied
t=10ms TJ =25oC,
IFSM
715
750
940
985
t=8.3ms no voltage reapplied
t=10ms No voltage
I2t
Max.I2tforfusing
3.61
3.30
2.56
2.33
4.42
4.03
36.1
0.88
0.91
5.90
5.74
t=8.3ms reapplied
InitialTJ =TJmax.
t=10ms 100%VRRM
KA2s
t=8.3ms reapplied
t=10ms TJ =25oC,
t=8.3ms no voltage reapplied
t=0.1 to 10ms, no voltage reapplied
I2√t
Max.I2√tforfusing (1)
KA2√s
VT(TO) Max.valueofthreshold
voltage (2)
Low level (3)
TJ = TJ max
High level (4)
V
r
Max.valueofon-state
Low level (3)
TJ = TJ max
High level (4)
t
mΩ
slope resistance (2)
Max.peakon-stateor
VTM
VFM
ITM=π xIT(AV)
TJ = 25°C
1.81
1.54
V
forward voltage
IFM=π xIF(AV)
di/dt Max.non-repetitive rate
of rise of turned on
TJ = 25oC, from 0.67 VDRM
TM =π x IT(AV), I = 500mA,
,
I
g
150
A/µs
mA
current
t < 0.5 µs, t > 6 µs
r p
TJ =25oC,anodesupply=6V,
IH
IL
Max. holding current
Max. latchingcurrent
200
400
resistive load, gate open circuit
TJ =25oC, anodesupply=6V,resistiveload
2
(1) I2t for time tx = I2√t x √tx
(4) I > π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
(3) 16.7% x π x IAV < I < π x IAV
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2
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
Triggering
Parameters
IRK.41
10
IRK.56
10
Units
Conditions
PGM Max.peakgatepower
W
A
PG(AV) Max.averagegatepower
2.5
2.5
IGM
Max.peakgatecurrent
2.5
2.5
-VGM Max.peaknegative
gate voltage
10
4.0
2.5
1.7
TJ =-40°C
TJ =25°C
TJ =125°C
V
VGT Max.gatevoltage
required to trigger
Anodesupply=6V
resistive load
270
150
80
TJ =-40°C
TJ =25°C
IGT
Max.gatecurrent
required to trigger
Anodesupply=6V
resistive load
mA
TJ =125°C
TJ =125oC,
ratedVDRMapplied
VGD Max.gatevoltage
thatwillnottrigger
0.25
6
V
TJ =125oC,
ratedVDRMapplied
IGD
Max.gatecurrent
thatwillnottrigger
mA
Blocking
Parameters
IRK.41
IRK.56
Units
mA
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
15
TJ = 125 oC, gate open circuit
2500 (1 min)
3500 (1 sec)
50 Hz, circuit to base, all terminals
shorted
VINS RMS isolation voltage
V
dv/dt Max. critical rate of rise
of off-state voltage (5)
TJ = 125oC, linear to 0.67 VDRM
gate open circuit
,
500
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT41/16AS90.
Thermal and Mechanical Specifications
Parameters
IRK.41
IRK.56
Units
°C
Conditions
TJ
T
Junction operating
temperature range
Storage temp. range
- 40 to 125
-40to125
stg
RthJC Max. internalthermal
resistance, junction
tocase
0.23
0.20
Permodule, DCoperation
K/W
Nm
RthCS Typicalthermalresistance
case to heatsink
Mounting surface flat, smooth and greased
0.1
T
Mounting torque ± 10%
to heatsink
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
5
3
busbar
wt
Approximateweight
110(4)
gr(oz)
Casestyle
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
Units
°C/W
180o
0.11
0.09
120o
0.13
0.11
90o
0.17
0.13
60o
0.23
0.18
30o
0.34
0.27
180o
0.09
0.07
120o
0.14
0.11
90o
0.18
0.14
60o
0.23
0.19
30o
0.34
0.28
IRK.41
IRK.56
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3
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
Ordering Information Table
Device Code
IRK.57 types
With no auxiliary cathode
IRK
T
56
/
16
A
S90
1
2
3
5
6
4
1
2
3
4
5
6
-
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration table below)
Current code * *
* * Available with no auxiliary cathode.
To specify change:
41 to 42
56 to 57
Voltage code (See Voltage Ratings table)
A : Gen V
e.g. : IRKT57/16A etc.
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Outline Table
Dimensions are in millimeters and [inches]
IRKN
IRKT
IRKH
IRKL
(1)
~
(1)
~
(1)
~
ꢀ1)
-
+
(2)
+
(2)
+
(2)
+
ꢀ2)
-
(3)
-
(3)
-
(3)
+
ꢀ3)
G1 K1
(4) (5)
G1
(4) (5)
K2 G2
(7) (6)
G1 K1
K2 G2
(7) (6)
K1
ꢀ4) ꢀ5)
NOTE: To order the Optional Hardware see Bulletin I27900
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4
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
130
120
110
100
90
130
120
110
100
90
IRK.41.. Se rie s
IRK.41.. Se rie s
(DC) = 0.46 K/W
R
(DC) = 0.46 K/W
R
thJC
thJC
C o nd uc tio n Angle
Co nd uc tio n Pe rio d
30°
60°
30°
60°
90°
90°
120°
120°
40
180°
180°
DC
60
80
80
0
10
20
30
40
50
0
20
80
Ave ra g e On-sta te Curre nt (A)
Ave ra g e On-sta te Curre nt (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
70
60
50
40
30
20
10
0
100
80
60
40
20
0
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Lim it
RMS Lim it
C o nd uc tio n Ang le
C ond uc tio n Pe rio d
IRK.41.. Se rie s
Pe r Junc tion
= 125°C
IRK.41.. Se rie s
Pe r Junc tion
= 125°C
T
T
J
J
0
10
20
30
40
50
0
20
40
60
80
Ave ra g e On-sta te Curre nt (A)
Ave ra g e O n-sta te Curre nt (A)
Fig. 4 - On-state Power Loss Characteristics
Fig. 3 - On-state Power Loss Characteristics
800
700
600
500
400
300
900
At Any Ra te d Loa d Cond ition And With
Ma ximum Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion. Control
Of Cond uc tio n Ma y Not Be Ma inta ine d .
Ra te d V
Ap p lie d Following Surg e .
RRM
Initia l T = 125°C
J
800
700
600
500
400
300
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initia l T = 125°C
J
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.41.. Se rie s
Pe r Junc tio n
IRK.41.. Se rie s
Pe r Junc tion
1
10
100
0.01
0.1
Pulse Tra in Dura tion (s)
1
Num b e r O f Eq ua l Am p litud e Ha lf C yc le Curre nt Pulse s (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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5
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
140
120
100
80
180°
120°
90°
60°
30°
60
Conduc tion Ang le
40
20
0
IRK.41.. Se rie s
Pe r Mod ule
T
= 125°C
J
0
20
40
60
80
100 20
40
60
80 100 120 140
Tota l RMS Outp ut Curre nt (A)
Ma xim um Allo wa b le Amb ie nt Te m p e ra ture (°C)
Fig. 7 - On-state Power Loss Characteristics
350
300
250
200
150
100
50
180°
(Sine )
180°
(Re c t)
2 x IRK.41.. Se rie s
Sing le Pha se Brid g e
C onne c te d
T
= 125°C
J
0
0
20
40
60
80
100 20
40
60
80 100 120 140
To ta l Outp ut Curre nt (A)
Ma xim um Allo wa b le Am b ie nt Te m p e ra ture (°C )
Fig. 8 - On-state Power Loss Characteristics
500
450
400
350
300
250
200
150
100
50
120°
(Re c t)
3 x IRK.41.. Se rie s
Thre e Pha se Brid g e
Co nne c te d
T
= 125°C
J
0
0
20
40
60
80 100 120 140
20
40
60
80 100 120 140
To ta l Outp ut Curre nt (A)
Ma xim um Allowa b le Am b ie nt Te m p e ra ture (°C )
Fig. 9 - On-state Power Loss Characteristics
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6
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
130
120
110
100
90
130
120
110
100
90
IRK.56.. Se rie s
IRK.56.. Se rie s
R
(DC) = 0.40 K/ W
C o nd uc tio n Pe rio d
R
(DC) = 0.40 K/ W
thJC
thJC
C o nd uc tio n Ang le
30°
60°
90°
90°
80
120°
180°
80
60°
120°
DC
80
30°
20
180°
70
70
0
10
20
30
40
50
60
70
0
40
60
100
Ave ra g e O n-sta te Curre nt (A)
Ave ra g e On-sta te Curre nt (A)
Fig. 10 - Current Ratings Characteristics
Fig. 11 - Current Ratings Characteristics
90
80
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Lim it
RMS Lim it
Co nd uc tio n Pe rio d
C o nd uc tio n Ang le
IRK.56.. Se rie s
Pe r Junc tion
IRK.56.. Se rie s
Pe r Junc tio n
T
= 125°C
J
T
= 125°C
J
0
10
Ave ra g e O n-sta te C urre nt (A)
Fig. 12 - On-state Power Loss Characteristics
20
30
40
50
60
0
20
40
60
80
100
Ave ra g e On-sta te C urre nt (A)
Fig. 13 - On-state Power Loss Characteristics
1200
1400
At Any Ra te d Loa d Cond ition And With
Ma ximum Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion. Control
Of Cond uc tio n Ma y Not Be Ma inta ine d .
Ra te d V
Ap p lie d Following Surg e .
RRM
1100
1000
900
800
700
600
500
Initia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1200
1000
800
Initia l T = 125°C
J
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
600
IRK.56.. Se rie s
Pe r Junc tion
IRK.56.. Se rie s
Pe r Junc tion
400
1
10
100
0.01
0.1
Pulse Tra in Dura tio n (s)
1
Num b e r O f Eq ua l Am p litud e Ha lf Cyc le Curre nt Pulse s (N)
Fig. 15 - Maximum Non-Repetitive Surge Current
Fig. 14 - Maximum Non-Repetitive Surge Current
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7
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
200
180
160
140
120
100
80
R
0
0
.
.
3
2
180°
120°
90°
60°
30°
K
K
0
/
/
.
W
4
W
K
=
/
W
0
.
1
K
/
W
-
D
e
l
t
a
R
1
2
K
/
W
W
Cond uc tion Ang le
60
40
20
0
K
/
IRK.56.. Se rie s
Pe r Mod ule
T
= 125°C
J
0
20
40
60
80
100 120 140
20
40
60
80
100 120 140
Tota l RMS Outp ut Curre nt (A)
Ma xim um Allo wa b le Am b ie nt Te m p e ra ture (°C )
Fig. 16 - On-state Power Loss Characteristics
450
400
350
300
250
200
150
100
50
0
.
2
K
/
W
180°
(Sine )
180°
(Re c t)
0
.
5
K
/
W
1
K
/
2 x IRK.56.. Se rie s
Sing le Pha se Brid g e
C onne c te d
W
2
K
/
W
T
= 125°C
J
0
0
20
40
To ta l Outp ut Curre nt (A)
Fig. 17 - On-state Power Loss Characteristics
60
80
100 120 140 20
40
60
80
100 120 140
Ma xim um Allo wa b le Am b ie nt Te m p e ra ture (°C )
600
500
400
300
200
100
0
120°
(Re c t)
3 x IRK.56.. Se rie s
Thre e Pha se Brid g e
C onne c te d
T
= 125°C
J
0
20 40 60 80 100 120 140 160 180
20
40
60
80 100 120 140
To ta l Outp ut Curre nt (A)
Ma xim um Allo wa b le Amb ie nt Te m p e ra ture (°C)
Fig. 18 - On-state Power Loss Characteristics
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8
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
1000
100
10
1000
100
10
T = 25°C
J
T = 25°C
J
T = 125°C
J
T = 125°C
J
IRK.56.. Se rie s
Pe r Junc tion
IRK.41.. Se rie s
Pe r Junc tio n
1
1
0
1
2
3
4
5
6
7
0.5
1
1.5
Insta nta ne o us O n-sta te Volta g e (V)
Fig. 20 - On-state Voltage Drop Characteristics
2
2.5
3
3.5
4
4.5
Insta nta ne o us On-sta te Vo lta g e (V)
Fig. 19 - On-state Voltage Drop Characteristics
500
450
400
350
300
250
200
150
100
110
100
90
I
= 200 A
IRK.41.. Se rie s
IRK.56.. Se rie s
TM
I
= 200 A
100 A
TM
100 A
50 A
20 A
T
= 125 °C
J
80
50 A
70
10 A
60
20 A
10 A
50
IRK.41.. Se rie s
IRK.56.. Se rie s
= 125 °C
T
J
40
30
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Forwa rd Curre nt - d i/d t (A/µs)
Ra te O f Fa ll Of On-sta te Curre nt - d i/ dt (A/ µs)
Fig. 21 - Recovery Charge Characteristics
Fig. 22 - Recovery Current Characteristics
1
Ste a d y Sta te Va lue :
R
R
= 0.46 K/W
= 0.40 K/W
thJC
thJC
(DC Op e ra tion)
IRK.41.. Se rie s
IRK.56.. Se rie s
0.1
Pe r Junc tion
0.01
0.001
0.01
0.1
Sq ua re Wa ve Pulse Dura tion (s)
1
10
Fig. 23 - Thermal Impedance ZthJC Characteristics
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9
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
100
Re c ta ng ula r g a te p ulse
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
a )Re c o m m e nd e d lo a d line for
ra te d d i/ d t: 20 V, 30 ohm s
tr = 0.5 µs, tp >= 6 µs
b )Re c o m m e nd e d loa d line fo r
<= 30% ra te d d i/ d t: 20 V, 65 o hm s
tr = 1 µs, tp >= 6 µs
10
1
(a )
(b )
(4)
(2) (1)
(3)
VGD
IGD
0.01
IRK.41../.56.. Se rie s Fre q ue nc y Lim ite d b y PG(AV)
0.1 10 100 1000
0.1
0.001
1
Insta nta ne ous Ga te Curre nt (A)
Fig. 24 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02
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10
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INFINEON
IRKL57/08APBF
Silicon Controlled Rectifier, 94.2A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-240AA, ADD-A-PAK-4
VISHAY
IRKL57/08P
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-240AA, LEAD FREE, POWER, ADD-A-PAK-5
VISHAY
IRKL57/08S90P
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-240AA, LEAD FREE, POWER, ADD-A-PAK-5
VISHAY
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