IRHY57230CMSE [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA); 抗辐射功率MOSFET直通孔（ TO- 257AA ）
| 型号： | IRHY57230CMSE |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| 文件： | 总8页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
PD - 93822B
IRHY57230CMSE
RADIATION HARDENED
POWER MOSFET
JANSR2N7489T3
200V, N-CHANNEL
THRU-HOLE (TO-257AA)
REF:MIL-PRF-19500/705
TECHNOLOGY
5
Product Summary
Part Number
IRHY57230CMSE 100K Rads (Si)
Radiation Level RDS(on)
0.23Ω
ID
QPL Part Number
12A JANSR2N7489T3
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
TO-257AA
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
12
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
7.6
48
C
I
Pulsed Drain Current À
Max. Power Dissipation
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
60
GS
E
mJ
A
AS
I
12
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
5.4
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
For footnotes refer to the last page
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1
06/10/04
IRHY57230CMSE, JANSR2N7489T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
200
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.26
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.23
Ω
V
= 12V, I = 7.6A
GS D
Ã
DS(on)
2.5
6.0
—
—
—
—
—
4.5
—
10
25
V
S ( )
V
DS
= V , I = 1.0mA
GS(th)
fs
GS
D
Ω
g
V
> 15V, I
= 7.6A Ã
DS
V
DS
I
= 160V ,V =0V
DSS
DS GS
µA
—
V
= 160V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
28
9.0
12
25
100
35
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 12A
g
gs
gd
d(on)
r
GS D
V
DS
= 100V
t
t
t
t
V
= 100V, I = 12A,
=12V, R = 7.5Ω
DD
GS
D
G
V
ns
d(off)
f
30
—
L
+ L
Measured from drain lead (6mm
0.25in. from package) to source
lead (6mm/0.25in. from package)
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1000
184
11
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
—
—
—
—
12
48
S
SM
A
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.2
300
3.2
V
nS
µC
T = 25°C, I = 12A, V
= 0V Ã
j
SD
rr
RR
S
GS
T = 25°C, I = 12A, di/dt ≤100A/µs
j
F
V
DD
≤ 25V Ã
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-Ambient
—
—
—
—
1.67
80
thJC
thJA
°C/W
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHY57230CMSE, JANSR2N7489T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads (Si)
Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-257AA)
200
2.0
—
—
—
—
4.5
100
-100
10
V
= 0V, I = 1.0mA
DSS
GS D
V
V
V
GS
= V , I = 1.0mA
GS(th)
DS
D
I
I
V
GS
= 20V
GSS
nA
µA
V
= -20V
GS
GSS
I
V
=160V, V =0V
GS
DSS
DS
GS
GS
R
DS(on)
—
0.232
Ω
V
= 12V, I = 7.6A
D
R
V
DS(on)
—
—
0.23
1.2
Ω
V
= 12V, I = 7.6A
D
Diode Forward Voltage
V
V
= 0V, I = 12A
D
GS
SD
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
36.7
Energy
(MeV)
309
341
350
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
I
Au
39.5
32.5
28.4
200
200
200
200
200
200
200
200
150
200
185
50
200
120
25
59.8
82.3
250
200
150
100
50
Br
I
Au
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY57230CMSE, JANSR2N7489T3
Pre-Irradiation
100
10
1
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
10
1
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
0.1
5.0V
20µs PULSE WIDTH
°
20µs PULSE WIDTH
°
T = 150 C
J
T = 25 C
J
0.1
0.1
0.01
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
100
10
1
12A
=
I
D
2.0
°
T = 150 C
J
1.5
1.0
0.5
0.0
°
T = 25 C
J
V
=50V
DS
20µs PULSE WIDTH
V
=12V
GS
0.1
5.0
6.0
7.0
8.0 9.0
10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
4
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Pre-Irradiation
IRHY57230CMSE, JANSR2N7489T3
2000
20
15
10
5
V
= 0V,
f = 1MHz
C
GS
I
D
= 12A
C
= C + C
gs
SHORTED
ds
V
V
V
= 160V
= 100V
= 40V
iss
gd ,
DS
DS
DS
C
= C
gd
= C + C
rss
C
1600
1200
800
400
0
oss ds
gd
C
iss
C
oss
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
10
20
30 40
50
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED BY
RDS(on)
°
T = 150 C
J
100µs
1ms
°
T = 25 C
J
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0 V
GS
0.1
0.1
0.3
1.0
10
100
1000
0.6
0.9
1.2
1.5
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
IRHY57230CMSE, JANSR2N7489T3
Pre-Irradiation
RD
12
10
8
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
4
Fig 10a. Switching Time Test Circuit
V
DS
2
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
SINGLE PULSE
0.02
0.01
t
1
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHY57230CMSE, JANSR2N7489T3
100
I
D
TOP
5.4A
9.6A
15V
80
60
40
20
0
BOTTOM 12A
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHY57230CMSE, JANSR2N7489T3
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á V
= 50V, starting T = 25°C, L= 0.82 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 12A, V
= 12V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
≤ 12A, di/dt ≤ 366A/µs,
DS
applied and V = 0 during
GS
SD
DD
160 volt V
V
≤ 200V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 06/2004
8
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