IRHY57234CMSEPBF [INFINEON]
Power Field-Effect Transistor, 9.6A I(D), 250V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3;
| 型号： | IRHY57234CMSEPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 9.6A I(D), 250V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
PD - 93823B
IRHY57234CMSE
RADIATION HARDENED
POWER MOSFET
JANSR2N7490T3
250V, N-CHANNEL
THRU-HOLE (TO-257AA)
REF: MIL-PRF-19500/705
TECHNOLOGY
5
Product Summary
Part Number
Radiation Level RDS(on)
ID QPL Part Number
IRHY57234CMSE 100K Rads (Si)
0.41Ω 9.6A JANSR2N7490T3
TO-257AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
9.6
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
6.0
38.4
75
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
W
W/°C
V
D
C
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
59
mJ
A
AS
I
9.6
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
2.4
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3( Typical )
For footnotes refer to the last page
www.irf.com
1
06/16/04
IRHY57234CMSE, JANSR2N7490T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
250
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.30
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.41
Ω
V
= 12V, I = 6.0A
GS D
Ã
DS(on)
2.5
6.0
—
—
—
—
—
4.5
—
10
25
V
S ( )
V
DS
= V , I = 1.0mA
GS(th)
fs
GS
D
Ω
g
V
> =15V, I
= 6.0A Ã
DS
V
DS
I
= 200V ,V =0V
DSS
DS GS
µA
—
V
= 200V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
28
7.4
12
25
100
35
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 9.6A
g
gs
gd
d(on)
r
GS D
V
DS
= 125V
t
t
t
t
V
DD
V
GS
= 125V, I = 9.6A,
=12V, R = 7.5Ω
D
G
ns
d(off)
f
30
—
Measured from drain lead (6mm
0.25in. from package) to source
lead (6mm/0.25in. from package)
L
+ L
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1016
157
9.0
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
—
—
—
—
9.6
38.4
S
SM
A
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.2
300
3.1
V
nS
µC
T = 25°C, I = 9.6A, V
= 0V Ã
j
SD
rr
RR
S
GS
T = 25°C, I = 9.6A, di/dt ≤ 100A/µs
j
F
V
DD
≤ 25V Ã
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-Ambient
—
—
—
—
1.67
80
thJC
thJA
°C/W
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHY57234CMSE, JANSR2N7490T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads (Si)
Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
250
2.0
—
—
—
—
4.5
100
-100
10
V
= 0V, I = 1.0mA
DSS
GS D
V
V
V
GS
= V , I = 1.0mA
GS(th)
DS
D
I
I
V
GS
= 20V
GSS
nA
µA
V
= -20V
GS
GSS
I
V
= 200V, V =0V
DS GS
DSS
R
DS(on)
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (T0-257AA)
—
0.414
Ω
V
= 12V, I = 6.0A
D
GS
GS
R
DS(on)
—
—
0.41
1.2
Ω
V
= 12V, I = 6.0A
D
V
SD
Diode Forward Voltage
V
V
= 0V, I = 9.6A
D
GS
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
36.7
Energy
(MeV)
309
341
350
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
I
Au
39.5
32.5
28.4
250
250
250
250
250
250
250
250
225
250
250
175
250
240
50
59.8
82.3
300
250
200
150
100
50
Br
I
Au
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY57234CMSE, JANSR2N7490T3
Pre-Irradiation
100
100
10
VGS
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
10
1
BOTTOM5.0V
BOTTOM 5.0V
5.0V
1
0.1
5.0V
0.1
0.01
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.001
0.01
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
10A
9.6A
=
I
D
°
T = 150 C
J
°
T = 25 C
J
= 50V
V
DS
20µs PULSE WIDTH
V
=12V
GS
0.1
5
6
7
8
9
10
11
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
4
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Pre-Irradiation
IRHY57234CMSE, JANSR2N7490T3
2000
20
V
= 0V,
f = 1MHz
C SHORTED
ds
9.6A
=
I
D
GS
C
= C + C
iss
gs
gd ,
V
V
V
= 200V
= 125V
= 50V
DS
DS
DS
C
= C
rss
gd
C
= C + C
1600
1200
800
400
0
oss
ds
gd
15
10
5
C
iss
C
oss
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED BY
R
(on)
DS
°
T = 150 C
J
100µs
1ms
°
T = 25 C
J
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0 V
GS
0.1
0.1
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
IRHY57234CMSE, JANSR2N7490T3
Pre-Irradiation
10.0
8.0
6.0
4.0
2.0
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
0.01
SINGLE PULSE
t
1
0.02
0.01
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
2. Peak T =P
t / t
1
x Z
+ T
C
J
DM
thJC
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHY57234CMSE, JANSR2N7490T3
100
I
D
TOP
4.3A
6.1A
15V
80
60
40
20
0
BOTTOM 9.6A
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temp(C)re
V
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHY57234CMSE, JANSR2N7490T3
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á V
= 50V, starting T = 25°C, L= 1.3mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 9.6A, V
= 12V
L
GS
Å Total Dose Irradiation with V
Bias.
Â
I
V
≤ 9.6A, di/dt ≤ 394A/µs,
DS
applied and V = 0 during
GS
SD
DD
200 volt V
≤ 250V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — TO-257AA
0.13 [.005]
A
5.08 [.200]
4.83 [.190]
3.81 [.150]
3.56 [.140]
10.66 [.420]
10.42 [.410]
3X Ø
1.14 [.045]
0.89 [.035]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
B
10.92 [.430]
10.42 [.410]
1
2
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
0.88 [.035]
0.64 [.025]
3X Ø
3.05 [.120]
Ø 0.50 [.020]
C A
B
NOT ES:
LEGEND
1 = DRAIN
2 = SOURCE
3 = GATE
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TOJEDECOUTLINE TO-257AA.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 06/04
8
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