IRHY4130CM [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA); 抗辐射功率MOSFET直通孔( TO- 257AA )型号: | IRHY4130CM |
厂家: | Infineon |
描述: | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
文件: | 总8页 (文件大小:108K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 91274D
IRHY7130CM
JANSR2N7380
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
REF: MIL-PRF-19500/614
RAD-Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
RDS(on)
ID
QPL Part Number
IRHY7130CM 100K Rads (Si) 0.18Ω 14.4A JANSR2N7380
IRHY3130CM 300K Rads (Si) 0.18Ω 14.4A JANSF2N7380
IRHY4130CM 600K Rads (Si) 0.18Ω 14.4A JANSG2N7380
IRHY8130CM 1000K Rads (Si) 0.18Ω 14.4A JANSH2N7380
TO-257AA
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
Features:
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for bothTotal Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
14.4
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
9.1
58
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
±20
150
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
mJ
A
AS
I
AR
—
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
mJ
V/ns
AR
dv/dt
—
6.0
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
300 ( 0.063 in.(1.6mm) from case for 10s)
7.0 (Typical )
Lead Temperature
Weight
For footnotes refer to the last page
www.irf.com
1
12/17/01
IRHY7130CM
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
100
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.11
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.18
0.20
4.0
—
V
= 12V, I =9.1A
D
DS(on)
GS
= 12V, I = 14.4A
➀
Ω
V
GS
D
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
2.5
—
V
S ( )
V
V
= V , I = 1.0mA
GS(th)
fs
DS
DS
V
GS
D
Ω
g
> 15V, I
= 9.1A ➀
DS
I
25
= 80V ,V =0V
DS GS
DSS
µA
—
250
V
= 80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Q
Q
Q
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
50
V
= 20V
GSS
GSS
GS
nA
nC
V
GS
= -20V
V
=12V, I =14.4A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
10
V
= 50V
DS
20
35
t
t
t
t
V
DD
V
= 50V, I =14.4A
D
75
=12V, R = 7.5Ω
GS G
ns
Turn-Off Delay Time
FallTime
70
60
d(off)
f
L
+ L
Total Inductance
—
S
D
nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
C
C
C
Input Capacitance
Output Capacitance
—
—
—
960
340
85
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
14.4
58
1.8
275
2.5
S
A
SM
V
T = 25°C, I = 14.4A, V
= 0V ➀
GS
j
SD
rr
S
Reverse Recovery Time
nS
µC
T = 25°C, I = 14.4A, di/dt ≤ 100A/µs
j
F
V
Q
Reverse Recovery Charge
≤ 50V ➀
DD
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
1.67
80
thJC
thJA
°C/W
Junction-to-Ambient
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHY7130CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
1
Parameter
100KRads(Si)
300 - 1000K Rads (Si)2 Units
Min Max
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
2.0
—
—
4.0
100
-100
25
100
1.25
—
—
4.5
100
-100
25
V
= 0V, I = 1.0mA
DSS
GS D
V
V
V = V , I = 1.0mA
GS
DS D
GS(th)
I
V
= 20V
GS
GSS
nA
I
—
—
V
= -20 V
GSS
GS
I
—
—
—
—
µA
Ω
V
V
=80V, V
=0V
GS
DSS
DS
GS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-257AA)
Diode Forward Voltage
➀
0.18
0.24
= 12V, I =9.1A
D
R
DS(on)
➀
—
—
0.18
1.8
—
—
0.24
1.8
Ω
V
= 12V, I =9.1A
D
GS
GS
V
SD
➀
V
V
= 0V, I = 14.4A
S
1. Part number IRHY7130, (JANSR2N7380)
2. Part numbers IRHY3130 , IRHY4130 and IRHY8130 (JANSF2N7380, JANSG2N7380 and JANSH2N7380)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS(V)
LET
MeV/(mg/cm²))
Energy Range
Ion
(MeV)
(µm)
@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
Br
28
285
305
43
39
100
100
100
90
100
70
80
50
60
36.8
—
120
100
80
60
40
20
0
Cu
Br
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHY7130CM
Pre-Irradiation
100
10
1
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
10
5.0V
5.0V
1
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.5
14.4A
=
I
D
°
T = 25 C
J
2.0
°
T = 150 C
J
1.5
1.0
0.5
0.0
V
= 50V
20µs PULSE WIDTH
DS
V
= 10V
GS
0.1
5
7
9
11 13
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
www.irf.com
Pre-Irradiation
IRHY7130CM
20
16
12
8
2000
1500
1000
500
I
D
= 14 A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C + C
iss
gs
gd ,
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
= C
rss
gd
C
= C + C
gd
oss
ds
C
iss
C
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
0
1
0
10
20
30
40
50
60
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
100
10
1
°
T = 25 C
J
100us
1ms
°
T = 25 C
C
J
10ms
°
T = 150 C
V
= 0 V
Single Pulse
GS
2.0
0.1
0.0
1
10
100
1000
0.5
1.0
1.5
2.5
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
www.irf.com
5
IRHY7130CM
Pre-Irradiation
15
12
9
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig10a. Switching Time Test Circuit
V
3
DS
90%
0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHY7130CM
400
300
200
100
0
I
D
TOP
6.4A
9.1A
BOTTOM 14A
15V
DRIVER
L
V
D S
D.U.T
AS
R
G
+
V
D D
-
I
A
V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR)D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig13a. Basic Gate Charge Waveform
www.irf.com
7
IRHY7130CM
Foot Notes:
Pre-Irradiation
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀ V
= 25V, starting T = 25°C, L=1.45mH
GS
DS
DD
J
irradiation per MIL-STD-750, method 1019, condition A.
Peak I = 14.4A, V
=12V
GS
L
➀ Total Dose Irradiation with V Bias.
➀ I
SD
≤ 14.4A, di/dt ≤ 395A/µs,
DS
= 0 during
80 volt V
applied and V
GS
V
DD
≤ 100V, T ≤ 150°C
DS
J
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions —TO-257AA
0.13 [.005]
A
5.08 [.200]
4.83 [.190]
3.81 [.150]
3.56 [.140]
10.66 [.420]
10.42 [.410]
3X Ø
1.14 [.045]
0.89 [.035]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
B
10.92 [.430]
10.42 [.410]
1
2
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
0.88 [.035]
0.64 [.025]
3X Ø
3.05 [.120]
Ø 0.50 [.020]
C
A
B
NOTES:
PIN AS S IGNMENTS
1. DIMENSIONING & TOLERANCING PER ANS I Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
1
2
3
=
=
=
DRAIN
SOURCE
GATE
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONFORMS TO JEDEC OUT LINE TO-257AA.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/01
8
www.irf.com
相关型号:
IRHY4130CMPBF
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN
INFINEON
IRHY53034CMPBF
Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3
INFINEON
IRHY53130CMPBF
Power Field-Effect Transistor, 18A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN
INFINEON
IRHY54034CMPBF
Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3
INFINEON
©2020 ICPDF网 联系我们和版权申明