IRHY4130CMPBF [INFINEON]
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN;
| 型号： | IRHY4130CMPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91274E
IRHY7130CM
JANSR2N7380
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
REF: MIL-PRF-19500/614
RAD-Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHY7130CM 100K Rads (Si)
IRHY3130CM 300K Rads (Si)
IRHY4130CM 500K Rads (Si)
IRHY8130CM 1000K Rads (Si)
RDS(on)
ID
QPL Part Number
0.18Ω 14.4A JANSR2N7380
0.18Ω 14.4A JANSF2N7380
0.18Ω 14.4A JANSG2N7380
0.18Ω 14.4A JANSH2N7380
International Rectifier’s RAD-HardTM HEXFET®technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rds(on) and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-257AA
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
= 12V, T = 25°C Continuous Drain Current
14.4
D
D
GS
GS
C
A
I
@ V
= 12V, T = 100°C Continuous Drain Current
9.1
58
C
I
Pulsed Drain Current À
Max. Power Dissipation
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
±20
150
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
GS
E
mJ
A
AS
I
AR
14.4
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
mJ
V/ns
AR
dv/dt
7.5
6.0
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
300 (0.063 in.(1.6mm) from case for 10s)
7.0 (Typical)
Lead Temperature
Weight
For footnotes refer to the last page
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1
05/02/06
IRHY7130CM, JANSR2N7380
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
100
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.11
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.18
0.20
4.0
—
V
= 12V, I =9.1A
D
Ã
DS(on)
GS
= 12V, I = 14.4A
Ω
V
GS
D
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
2.5
—
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
> 15V, I
= 9.1A Ã
DS
V
DS
I
25
= 80V ,V =0V
DS GS
DSS
µA
—
250
V
= 80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
50
V
= 20V
GSS
GSS
GS
nA
nC
V
= -20V
GS
Q
Q
Q
V
=12V, I =14.4A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
10
V
= 50V
DS
20
t
t
t
t
35
75
V
= 50V, I =14.4A
D
=12V, R = 7.5Ω
DD
V
GS
G
ns
Turn-Off Delay Time
Fall Time
70
d(off)
60
f
L
+ L
Total Inductance
—
S
D
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
nH
C
C
C
Input Capacitance
—
—
—
960
340
85
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
pF
oss
rss
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
14.4
58
S
A
SM
V
1.8
275
2.5
V
T = 25°C, I = 14.4A, V
= 0V Ã
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
ns
µC
T = 25°C, I = 14.4A, di/dt ≤ 100A/µs
j
rr
RR
F
V
≤ 50V Ã
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
—
—
—
—
1.67
80
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHY7130CM, JANSR2N7380
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100KRads(Si)1
300 - 1000K Rads (Si)2 Units
Min Max
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
100
2.0
—
—
4.0
100
1.25
—
—
4.5
V
= 0V, I = 1.0mA
GS D
DSS
V
V
V = V , I = 1.0mA
GS
DS D
GS(th)
I
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
25
100
-100
25
V
= 20V
GS
GSS
GSS
DSS
nA
—
—
V
GS
= -20 V
—
—
µA
V
V
=80V, V
=0V
GS
DS
GS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-257AA)
Diode Forward Voltage
Ã
—
0.18
—
0.24
Ω
= 12V, I =9.1A
D
R
DS(on)
Ã
—
—
0.18
1.8
—
—
0.24
1.8
Ω
V
= 12V, I =9.1A
D
GS
GS
V
SD
Ã
V
V
= 0V, I = 14.4A
S
1. Part number IRHY7130CM (JANSR2N7380)
2. Part numbers IRHY3130CM (JANSF2N7380), IRHY4130CM (JANSG2N7380) and IRHY8130CM (JANSH2N7380)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
(µm)
43
VDS(V)
(MeV/(mg/cm2)) (MeV)
@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
Br
28
285
305
100
100
100
90
100
70
80
50
60
—
36.8
39
120
100
80
60
40
20
0
Cu
Br
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHY7130CM, JANSR2N7380
Pre-Irradiation
100
10
1
VGS
15V
100
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM5.0V
BOTTOM 5.0V
10
5.0V
5.0V
1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 150 C
J
°
T = 25 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.5
14.4A
=
I
D
°
T = 25 C
J
2.0
°
T = 150 C
J
1.5
1.0
0.5
0.0
V
= 50V
20µs PULSE WIDTH
DS
V
= 10V
GS
0.1
5
7
9
11 13
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHY7130CM, JANSR2N7380
20
16
12
8
2000
1500
1000
500
I = 14 A
D
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C + C
iss
gs
gd ,
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
= C
rss
gd
C
= C + C
gd
oss
ds
C
iss
C
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
0
1
0
10
20
30
40
50
60
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
100
10
1
°
T = 25 C
J
100us
1ms
°
T = 25 C
C
J
10ms
°
T = 150 C
V
= 0 V
Single Pulse
GS
0.1
0.0
1
10
100
1000
0.5
1.0
1.5
2.0
2.5
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHY7130CM, JANSR2N7380
Pre-Irradiation
15
12
9
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig10a. Switching Time Test Circuit
V
3
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
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Pre-Irradiation
IRHY7130CM, JANSR2N7380
400
300
200
100
0
I
D
TOP
6.4A
9.1A
BOTTOM 14A
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig13a. Basic Gate Charge Waveform
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7
IRHY7130CM, JANSR2N7380
Foot Notes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
DS
Á
V
= 25V, starting T = 25°C, L=1.45mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DD
Peak I = 14.4A, V
=12V
L
GS
Å Total Dose Irradiation with V Bias.
Â
I
SD
≤ 14.4A, di/dt ≤ 395A/µs,
≤ 100V, T ≤ 150°C
J
DS
= 0 during
80 volt V
applied and V
GS
V
DS
irradiation per MlL-STD-750, method 1019, condition A.
DD
Case Outline and Dimensions — TO-257AA
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2006
8
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