IRGR2B60KDTRRPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE;
| 型号： | IRGR2B60KDTRRPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE 软恢复二极管 快速软恢复二极管 |
| 文件： | 总12页 (文件大小：751K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRGR2B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST
SOFT RECOVERY DIODE
Features
Low VCE (ON) Non Punch Through IGBT technology
Low Diode VF
10µs Short Circuit Capability
Square RBSOA
Ultra-soft Diode Reverse Recovery Characteristics
Positive VCE (ON) temperature co-efficient
Lead-free
C
Benefits
Benchmark Efficiency for Motor Control
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Low EMI
E
G
D-Pak
G
Gate
C
E
Emitter
Collector
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
75
IRGR2B60KDPbF
D-Pak
Tube
IRGR2B60KDPbF
IRGR2B60KDTRPbF
IRGR2B60KDTRLPbF
IRGR2B60KDTRRPbF
Tape and Reel
2000
3000
3000
Tape and Reel Left
Tape and Reel Right
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
Max.
600
6.3
3.7
8.0
8.0
6.3
3.7
8.0
±20
35
Units
V
VCES
ICM
ILM
A
IFM
VGE
V
W
14
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
°C
300
(0.063 in.(1.6mm) from case)
Thermal Resistance
Parameter
Min.
–––
–––
–––
Typ.
–––
–––
–––
Max.
3.56
7.70
50
Units
RθJC (IGBT) Junction-to-Case (IGBT)
RθJC (Diode) Junction-to-Case (Diode)
°C/W
RθJA
Junction-to-Ambient (PCB Mount)
1
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© 2012 International Rectifier
January 8, 2013
IRGR2B60KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
600
—
Typ.
—
Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
—
—
V
VGE = 0V, IC = 500µA
0.49
1.95
2.28
—
V/°C VGE = 0V, IC = 1mA (25°C-150°C)
V(BR)CES/TJ
VCE(on)
—
—
2.25
—
V
IC = 2.0A, VGE = 15V, TJ = 25°C
IC = 2.0A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
gfe
Gate Threshold Voltage
4.0
—
6.0
—
V
S
Forward Transconductance
Collector-to-Emitter Leakage Current
1.2
0.5
23
VCE = 50V, IC = 2.0A, PW = 20µs
ICES
—
25
µA
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IF = 2.0A
—
—
VFM
IGES
Diode Forward Voltage Drop
—
—
1.3
1.1
—
1.6
—
V
IF = 2.0A, TJ = 150°C
Gate-to-Emitter Leakage Current
—
±100
nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
8.0
1.3
4.0
74
Max. Units
Conditions
Qg
12
IC = 2.0A
nC VGE = 15V
VCC = 400V
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
2.0
6.0
160
120
280
30
25
170
75
—
µJ
ns
IC = 2.0A, VCC = 400V, VGE = 15V
RG = 100, L = 7.1mH, TJ = 25°C
Energy losses include tail & diode
reverse recovery
39
113
11
8.7
150
56
td(off)
tf
Turn-Off delay time
Fall time
Eon
Eoff
Etot
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
120
68
µJ
ns
IC = 2.0A, VCC =400V, VGE=15V
—
188
13
—
RG = 100, L = 7.1mH, TJ = 150°C
Energy losses include tail & diode
reverse recovery
—
6.8
170
110
110
17
—
td(off)
tf
Turn-Off delay time
Fall time
—
—
Cies
Coes
Cres
Input Capacitance
—
VGE = 0V
pF
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
—
f = 1.0Mhz
4.0
—
TJ = 150°C, IC = 8.0A
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
VCC = 480V, Vp ≤ 600V
Rg = 100, VGE = +20V to 0V
TJ = 150°C, Vp ≤ 600V, Rg=330
10
—
—
µs
V
CC = 360V, VGE = +15V to 0V
TJ = 150°C
CC = 400V, IF = 2.0A, L = 7.1mH
VGE = 15V, Rg = 100
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
19
45
30
68
µJ
ns
A
V
Irr
Diode Peak Reverse Recovery Current
5.8
8.7
Notes:
VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 100.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
R is measured at TJ of approximately 90°C.
FBSOA operating conditions only.
When mounted on 1” square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note #AN-994.
2
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© 2012 International Rectifier
January 8, 2013
IRGR2B60KDPbF
6
5
4
3
2
1
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 14W
Square Wave:
VCC
I
Diode as specified
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
35
7
6
5
4
3
2
1
0
30
25
20
15
10
5
0
25
50
75
100
(°C)
125
150
25
50
75
100
(°C)
125
150
T
T
C
C
Fig. 3 - Power Dissipation vs.
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
10
10
10µsec
100µsec
1msec
1
0.1
DC
Tc = 25°C
Tj = 150°C
Single Pulse
1
0.01
10
100
1000
1
10
100
1000
V
(V)
V
(V)
CE
CE
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 150°C; VGE = 15V
Fig. 5 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
3
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© 2012 International Rectifier
January 8, 2013
IRGR2B60KDPbF
10
8
10
8
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
6
4
4
2
2
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
TJ = 25°C; tp = 20µs
10
8
10
V
= 18V
GE
8
6
4
2
0
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
-40°C
25°C
150°C
6
4
2
0
0
2
4
6
8
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
(V)
V
(V)
F
CE
Fig. 9 - Typ. Diode Forward Voltage Drop
Fig. 8 - Typ. IGBT Output Characteristics
Characteristics
TJ = 150°C; tp = 20µs
10
10
8
8
6
4
2
0
I
I
I
= 1.0A
= 2.0A
= 4.0A
CE
CE
CE
I
I
I
= 1.0A
= 2.0A
= 4.0A
CE
CE
CE
6
4
2
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
4
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© 2012 International Rectifier
January 8, 2013
IRGR2B60KDPbF
10
8
12
10
8
I
I
I
= 1.0A
= 2.0A
= 4.0A
CE
CE
CE
6
6
4
T
= 25°C
J
4
T
= 150°C
J
2
2
0
0
5
10
15
20
4
6
8
10
12
14
16
V
(V)
V
(V)
GE
GE
Fig. 13 - Typ. Transfer Characteristics
CE = 50V; tp = 20µs
Fig. 12 - Typical VCE vs. VGE
V
TJ = 150°C
250
200
150
100
50
1000
100
10
td
OFF
E
ON
t
F
td
ON
E
OFF
t
R
0
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
(A)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
(A)
I
I
C
C
Fig. 14 - Typ. Energy Loss vs. IC
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; L = 7.1mH; VCE = 400V, RG = 100; VGE = 15V
TJ = 150°C; L = 7.1mH; VCE = 400V, RG = 100; VGE = 15V
220
200
1000
td
OFF
180
100
E
ON
160
140
120
100
80
t
F
td
ON
E
OFF
10
t
R
60
1
0
100
200
300
400
500
0
100
200
300
400
500
( )
R
( )
R
G
G
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; L = 7.1mH; VCE = 400V, ICE = 2.0A; VGE = 15V
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 7.1mH; VCE = 400V, ICE = 2.0A; VGE = 15V
5
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January 8, 2013
IRGR2B60KDPbF
6.0
5.0
4.0
3.0
2.0
7.0
6.0
5.0
4.0
3.0
2.0
100
R
R
G =
200
330
G =
R
G =
R
470
G =
100 150 200 250 300 350 400 450 500
0.0
1.0
2.0
3.0
(A)
4.0
5.0
I
R
(
F
G
Fig. 19 - Typical Diode IRR vs. RG
Fig. 18 - Typical Diode IRR vs. IF
TJ = 150°C; IF = 2.0A
TJ = 150°C
6.0
5.0
4.0
3.0
2.0
350
300
250
200
150
100
50
4.0A
200
330
100
470
2.0A
1.0A
50
100
150
200
250
300
40
80
120
160
200
240
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 21 - Typical Diode QRR
CC = 400V; VGE = 15V; TJ = 150°C
Fig. 20 - Typical Diode IRR vs. diF/dt
CC = 400V; VGE = 15V; IF = 2.0A; TJ = 150°C
V
V
35
30
25
20
15
10
5
1000
100
10
= 100
R
G
Cies
= 200
R
G
= 330
R
G
Coes
Cres
R
= 470
G
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
(A)
0
100
200
V
300
(V)
400
500
I
F
CE
Fig. 23 - Typ. Capacitance vs. VCE
Fig. 22 - Typ. Diode ERR vs. IF
VGE= 0V; f = 1MHz
TJ = 150°C
6
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© 2012 International Rectifier
January 8, 2013
IRGR2B60KDPbF
16
14
12
10
8
V
V
= 400V
= 300V
CES
CES
6
4
2
0
0
1
2
3
4
5
6
7
8
Q
, Total Gate Charge (nC)
G
Fig. 23 - Typical Gate Charge vs. VGE
ICE = 2.0A
10
D = 0.50
1
0.20
0.10
0.05
Ri (°C/W)
i (sec)
0.000004
0.000072
0.000715
0.005046
R1
R1
R2
R2
R3
R3
R4
R4
0.073623
1.265403
1.345162
0.877346
J J
CC
1 1
2 2
3 3
4 4
0.02
0.01
0.1
0.01
10
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig. 24 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
D = 0.50
0.20
1
Ri (°C/W)
i (sec)
0.000051
0.000119
0.001799
0.014349
0.10
R1
R1
R2
R2
R3
R3
R4
R4
0.510125
2.282292
3.175748
1.735309
0.05
J J
CC
1 1
2 2
3 3
4 4
0.02
0.01
Ci= iRi
Ci= iRi
0.1
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 25 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
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© 2012 International Rectifier
January 8, 2013
IRGR2B60KDPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
4X
DC
DUT
VCC
-5V
DUT /
DRIVER
VCC
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
R = VCC
ICM
VCC
DUT
Rg
Fig. C.T.5 - Resistive Load Circuit
8
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© 2012 International Rectifier
January 8, 2013
IRGR2B60KDPbF
500
400
300
200
100
0
10
8
500
400
300
200
100
0
10
8
tr
tf
TEST
CURRENT
6
6
4
4
90% ICE
90% ICE
2
2
10% ICE
5% VCE
5% VCE
5% ICE
0
0
Eon Loss
-2
Eoff Loss
-100
-100
-2
-0.3
-0.1
0.1
0.3
0.5
-1.5
-0.5
0.5
time(µs)
1.5
2.5
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.4
500
400
300
200
100
0
50
3
QRR
tRR
2
1
VCE
40
0
-1
-2
30
20
ICE
10%
Peak
IRR
-3
Peak
IRR
10
0
-4
-5
-6
-7
-100
-10
-5
0
5
10
15
-0.10
0.00
0.10
0.20
time (µs)
time (µs)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
@ TJ = 150°C using Fig. CT.4
9
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© 2012 International Rectifier
January 8, 2013
IRGR2B60KDPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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© 2012 International Rectifier
January 8, 2013
IRGR2B60KDPbF
D-Pak (TO-252AA) Tape and Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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© 2012 International Rectifier
January 8, 2013
IRGR2B60KDPbF
Qualification Information†
Qualification Level
Industrial†
MSL1
D-Pak
Moisture Sensitivity Level
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
12
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© 2012 International Rectifier
January 8, 2013
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