IRFY9240MPBF [INFINEON]

Power Field-Effect Transistor, 9.4A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN;


型号：	IRFY9240MPBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 9.4A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN 晶体晶体管开关脉冲局域网
文件：	总6页 (文件大小：241K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Previous Datasheet

Index

Next Data Sheet

Provisional Data Sheet No. PD 9.1295A

IRFY9240CM

HEXFET^®POWERMOSFET

P-CHANNEL

-200Volt, 0.51Ω HEXFET

Product Summary

International Rectifier’s HEXFET technology is the key to

its advanced line of power MOSFET transistors.The effi-

cient geometry design achieves very low on-state resis-

tance combined with high transconductance.

Part Number

DSS

DS(on)

IRFY9240CM

-200V

0.51Ω

-9.4A

Features

HEXFET power MOSFETs also feature all of the well-

established advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and electri-

cal parameter temperature stability.They are well-suited

for applications such as switching power supplies, motor

controls, inverters, choppers, audio amplifiers, high en-

ergy pulse circuits, and virtually any application where

high reliability is required.

n Hermetically Sealed

n Electrically Isolated

n Simple Drive Requirements

n Ease of Paralleling

The HEXFET power MOSFET’s totally isolated package

eliminates the need for additional isolating material between

the device and the heatsink.This improves thermal effi-

ciency and reduces drain capacitance.

Absolute Maximum Ratings

Parameter

IRFY9240CM

Units

@ V = -10V, T = 25°C

Continuous Drain Current

-9.4

-6.0

@ V = -10V, T = 100°C Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

-36

@ T = 25°C

100

W/Kꢀ

0.8

Gate-to-Source Voltage

Single Pulse Avalance Energy

Avalance Current

±20

700

-9.4

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

V/ns

dv/dt

-5.5

-55 to 150

Storage Temperature Range

°C

stg

LeadTemperature

Weight

300 (0.063 in (1.6mm) from case for 10 sec)

4.3(typical)

* I_Dcurrent limited by pin diameter

To Order

Previous Datasheet

Index

Next Data Sheet

IRFY9240CM Device

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

-200

—

= 0V, I = -1.0mA

DSS

V/°C Reference to 25°C, I = -1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

-0.20

DSS

Voltage

Static Drain-to-Source

On-State Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

0.51

0.52

-4.0

—

= -10V, I = -6.0A

DS(on)

Ω

= -10V, I = -9.4A

-2.0

4.0

—

= V , I

-250µA

GS(th)

Ω

S ( )

≥ -15V, I

= -6.0A

-25

= 0.8 x max. rating,V

= 0V

DSS

µA

—

-250

= 0.8 x max. rating

= 0V, T = 125°C

= -20V

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

8.7

-100

100

GSS

= 20V

3.0

4.5

—

= -10V, I = -9.4A

= Max. Rating x 0.5

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

see figures 6 and 13

V = -100V, I = -9.4A

d(on)

= 9.1Ω, V

Rise Time

—

= -10V

Turn-Off Delay Time

—

d(off)

FallTime

—

see figure 10

Internal Drain Inductance

—

Measured from the drain

lead, 6mm (0.25 in.) from

package to center of die.

symbol

Modified MOSFET

showing the internal

inductances.

Internal Source Inductance

—

8.7

—

Measured from the

source lead, 6mm (0.25

in.) from package to

source bonding pad.

Input Capacitance

—

1200

570

—

= 0v, V = -25V

iss

Output Capacitance

pF f = 1.0MHz.

oss

rss

Reverse Transfer Capacitance

see figure 5

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

symbol showing the

Modified MOSFET

integral reverse p-n junction rectifier.

Continuous Source Current (Body Diode)

—

-9.4

-36

Pulse Source Current (Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

-4.6

440

7.2

T = 25°C, I = -9.4A, V

= 0V

ns T = 25°C, I = -9.4A, di/dt ≤ -100 A/µs

µC

≤ -50 V

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Junction-to-Ambient

Case-to-Sink

—

1.25

thJC

thJA

thCS

80 K/Wꢀ

—

Typical socket mount

0.21

Mounting surface flat, smooth

To Order

Previous Datasheet

Index

Next Data Sheet

IRFY9240CM Device

Fig. 1 — Typical Output Characteristics

T_C= 25°C

Fig. 2 —Typical Output Characteristics

T_C= 150°C

-9.4

Fig. 3 — Typical Transfer Characteristics

Fig. 4 — Normalized On-Resistance vs. Temperature

-9.4

Fig. 5 — Typical Capacitance vs. Drain-to-Source

Voltage

Fig. 6 — Typical Gate Charge vs. Gate-to-Source

Voltage

To Order

Previous Datasheet

Index

Next Data Sheet

IRFY9240CM Device

1 0 0

1 0

O P E R AT IO N IN T H IS A R E A L IM IT E D

B Y

D S(on)

100µs

1m s

2 5 °C

1 5 0 °C

S ing le P uls e

10ms

1 0

1 0 0

1 0 0 0

-V

, D ra in -to -So u rce Vo lta g e (V)

D S

Fig. 7 — Typical Source-to-Drain Diode Forward

Voltage

Fig. 8 — Maximum Safe Operating Area

1 0

1 5 0

2 5

5 0

7 5

1 0 0

1 2 5

, C ase Te m p era tu re (°C )

Fig. 9 — Maximum Drain Current vs. Case Tempera-

ture

Fig. 10a — Switching Time Test Circuit

Fig. 10b — Switching Time Waveforms

To Order

Previous Datasheet

Index

Next Data Sheet

IRFY9240CM Device

1 0

0 . 50

0 .2 0

0 .1 0

0 .0 5

0. 1

0 .0 2

0 .0 1

S IN G L E P U L S E

( T H E R M A L R E S P O N S E )

0 . 0 1

0 . 0 0 0 0 1

0 . 0 0 0 1

0 . 0 0 1

0 . 0 1

0. 1

t₁, Re ctang ular Puls e Duratio n (sec )

Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

Fig. 12a — Unclamped Inductive Test Circuit

Fig. 12b — Unclamped Inductive Waveforms

8 0 0

6 0 0

4 0 0

2 0 0

-1 1A

-50 V

1 5 0

2 5

5 0

7 5

1 0 0

1 2 5

Sta rtin g

T , Jun ction Te m p e ra ture (°C )

Fig. 12c — Max. Avalanche Energy vs. Current

Fig. 13a — Gate ChargeTest Circuit

To Order

Previous Datasheet

Index

Next Data Sheet

Notes:

IRFY9240CM Device

Repetitive Rating; Pulse width limited by maximum

junction temperature (see figure 11).

@ V

= -50V, Starting T = 25°C,

= [0.5

(

)

[BV

/(BV

-V )]

DSS DD

DSS

Peak I = -9.4A, V

= -10V, 25 ≤ R ≤ 200Ω

≤ -9.4A, di/dt ≤ -150A/µs, V

≤ BV

, T ≤ 150°C

DSS J

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

ꢀ K/W = °C/W W/K = W/°C

Fig. 13b — Basic Gate Charge Waveform

Case Outline and Dimensions

Pin 1 - Drain

Pin 2 - Source

Pin 3 - Gate

TO-257AA

NON-STANDARD PIN CONFIGURATION

NOTES:

Pin 1 - Gate

Pin 2 - Drain

Pin 3 - Source

1. Dimensioning and tolerancing per ANSI Y14.5M-1982

2. Controlling dimension: Inch

3. Dimensions are shown in millimeters (Inches)

4. Outline conforms to JEDEC outline TO-257AA

Order Part Type IRFY9240C

CAUTION

BERYLLIAWARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted,

machined or have other operations performed on them which

will produce beryllia or beryllium dust.Furthermore, beryllium

oxide packages shall not be placed in acids that will produce

fumes containing beryllium.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44(0) 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.8/96

To Order

IRFY9240MPBF [INFINEON]

相关型号：

IRFY9240SCV

IRFY9310F

IRFZ10

IRFZ10

IRFZ10

IRFZ10-001

IRFZ10-001PBF

IRFZ10-002

IRFZ10-003

IRFZ10-003PBF

IRFZ10-004PBF

IRFZ10-005