IRFY9310F [ETC]
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | TO-220VAR ; 晶体管| MOSFET | P沟道| 400V V（ BR ） DSS | TO- 220VAR\n
| 型号： | IRFY9310F |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | TO-220VAR
|
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFY9310F
MECHANICAL DATA
Dimensions in mm (inches)
P–CHANNEL
POWER MOSFET
FOR HI–REL
4.50
4.81
10.40
10.80
0.75
0.95
APPLICATIONS
3.50
3.70
Dia.
VDSS
400V
1.8A
7.0
1 2 3
ID(cont)
RDS(on)
➀
➀
1.0 dia.
3 places
FEATURES
• HERMETICALLY SEALED TO–220 METAL
PACKAGE WITH FLEXIBLE LEADS
0.75
0.85
2.54
BSC
2.65
2.96
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
TO220 FLEX
PIN1 – Gate
PIN 2 – Drain
PIN 3 – Source
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
V
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
±20V
GS
I
I
I
(V = 0 , T
= 25°C)
A
1.1A
D
GS
case
case
(V = 0 , T
= 100°C)
D
GS
1
Pulsed Drain Current
7.2A
DM
P
Power Dissipation @ T = 25°C
case
50W
D
Linear Derating Factor
0.4W/°C
–55 to 150°C
300°C
T , T
Operating and Storage Temperature Range
J
stg
T
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
L
R
2.5°C/W max.
JC
Notes
1) Pulse Test: Pulse Width 300ms,
2%
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 9/00
IRFY9310F
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
amb
Parameter
Test Conditions
Min.
Typ.
Max. Unit
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
BV
V
= 0
I = - 250 A
- 400
V
DSS
GS
D
BV
Reference to 25°C
I = - 1mA
DSS
- 0.41
V/°C
T
J
D
Static Drain – Source On–State
R
V
= - 10V
I = - 1.1A
7.0
DS(on)
GS
D
1
Resistance
V
Gate Threshold Voltage
V
V
V
V
V
V
= V
I = -250 A
- 2
- 4
V
S
GS(th)
DS
DS
DS
DS
GS
GS
GS
D
g
Forward Transconductance
-50V
I = -1.1A
0.91
fs
D
= - 400V
= - 320V
= 20V
V
= 0
-100
-500
100
GS
I
Drain-to-Source Leakage Current
A
DSS
T = 125°C
J
I
I
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
GSS
nA
= –20V
-100
GSS
DYNAMIC CHARACTERISTICS
Input Capacitance
C
C
C
V
V
= 0
270
50
iss
GS
DS
Output Capacitance
= - 25V
pF
nC
oss
rss
Reverse Transfer Capacitance
f = 1MHz
8.0
1
Q
Q
Q
Total Gate Charge
13
3.2
5
g
V
V
= -10V
I = 1.1A
GS
D
1
Gate – Source Charge
gs
= -320V
DS
1
Gate – Drain (“Miller”) Charge
gd
1
t
t
t
t
Turn–On Delay Time
V
= 200V
11
10
25
24
d(on)
r
DD
1
Rise Time
I = - 1.1A
D
ns
1
Turn–Off Delay Time
R = 21
G
d(off)
f
1
Fall Time
R = 180
D
SOURCE – DRAIN DIODE CHARACTERISTICS
D
S
I
I
Continuous Source Current
Pulse Source Current
Mosfet symbol showing the
- 1.8
- 7.2
S
A
V
G
integral reverse p-n junction diode
SM
I = - 1.1A
T = 25°C
J
S
1
V
Diode Forward Voltage
- 4
SD
V
= 0V
GS
1
t
Reverse Recovery Time
I = -1.1A
T = 25°C
170
640
260
960
ns
C
rr
F
J
1
Q
t
Reverse Recovery Charge
d / d 100A/ s V
DD
50V
rr
i
t
Forward Turn–On Time
Negligible
on
PACKAGE CHARACTERISTICS
L
L
Internal Drain Inductance (6mm down drain lead to centre of die)
Internal Source Inductance (6mm down source lead to centre of source bond pad)
4.5
7.5
D
nH
S
Notes
1) Pulse Test: Pulse Width 300ms,
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 9/00
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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