IRFS41N15DTRLP [INFINEON]
Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3;
| 型号： | IRFS41N15DTRLP |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总13页 (文件大小：699K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFB41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFSL41N15DPbF
HEXFET® Power MOSFET
Applications
High frequency DC-DC converters
VDSS
RDS(on) max
ID
150V
Benefits
0.045
Low Gate-to-Drain Charge to Reduce
Switching Losses
41A
Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See App.
Note AN1001)
D
D
Fully Characterized Avalanche Voltage
and Current
Lead-Free
S
D
S
S
S
D
D
G
G
G
G
TO-262 Pak
IRFSL41N15DPbF
TO-220 Full-Pak
IRFB41N15DPbF
TO-220AB
IRFB41N15DPbF
G
D
S
Gate
Drain
Source
Standard Pack
Form
Base part number
Package Type
Orderable Part Number
Quantity
IRFB41N15DPbF
IRFSL41N15DPbF
IRFIB41N15DPbF
TO-220
TO-262
Tube
50
50
IRFB41N15DPbF
IRFSL41N15DPbF
Tube
TO-220 Full-Pak
Tube
Tube
Tape and Reel Left
50
50
800
IRFIB41N15DPbF
IRFS41N15DPbF
IRFS41N15DTRLPbF
IRFS41N15DPbF
D2-Pak
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
41
A
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
29
164
3.1
200
48
PD @TA = 25°C
PD @TC = 25°C
PD @TC = 25°C
Maximum Power Dissipation D2-Pak
Maximum Power Dissipation TO-220
Maximum Power Dissipation TO-220 Full-Pak
Linear Derating FactorTO-220
W
1.3
W/°C
Linear Derating FactorTO-220 Full-Pak
Gate-to-Source Voltage
0.32
± 30
VGS
V
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
2.7
V/ns
-55 to + 175
TSTG
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ.
–––
–––
0.50
–––
–––
–––
Max.
Units
0.75
3.14
–––
62
RJC
RJC
RCS
RJA
RJA
RJA
Junction-to-Case, TO-220 Full-Pak
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient,TO-220
Junction-to-Ambient,D2-Pak
Junction-to-Ambient, TO-220 Full-Pak
°C/W
40
65
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IRFB/IB/S/SL41N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
150 ––– –––
––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
VGS = 0V, ID = 250µA
––– ––– 0.045
VGS = 10V, ID = 25A
VGS(th)
3.0
–––
5.5
25
250
100
-100
V
VDS = VGS, ID = 250µA
––– –––
––– –––
––– –––
–––
V
DS = 150 V, VGS = 0V
VDS = 120V,VGS = 0V,TJ =150°C
GS = 30V
VGS = -30V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Forward Trans conductance
Total Gate Charge
18
–––
72
21
35
16
63
25
14
–––
110
31
S
V
DS = 50V, ID = 25A
ID = 25A
nC VDS = 120V
GS = 10V
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
52
V
–––
–––
–––
–––
VDD = 75V
ID = 25A
RG= 2.5
ns
VGS = 10V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 2520 –––
V
GS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 510
––– 110
–––
–––
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 120V ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V
pF
––– 3090 –––
––– 230
––– 250
–––
–––
Avalanche Characteristics
Parameter
Typ.
–––
–––
–––
Max.
470
25
Units
mJ
A
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
EAR
Repetitive Avalanche Energy
20
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS
––– –––
––– –––
41
A
ISM
164
VSD
trr
Qrr
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– –––
––– 170
1.3
260
1.9
V
TJ = 25°C,IS = 25A,VGS = 0V
ns TJ = 25°C ,IF = 25A
di/dt = 100A/µs
–––
1.3
C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
starting TJ = 25°C, L = 1.5mH, RG = 25, IAS = 25A.
ISD 25A, di/dt 340A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
This is only applied to TO-220AB package.
.
This is applied to D2Pak, when mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
2
2017-04-27
IRFB/IB/S/SL41N15DPbF
1000
100
10
1000
100
10
VGS
15V
VGS
TOP
TOP
15V
10V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
BOTTOM 6.0V
6.0V
20µs PULSE WIDTH
6.0V
1
20µs PULSE WIDTH
°
T = 25
J
C
°
T = 175
J
C
1
0.1
1
0.1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
3.0
1000
41A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
°
T = 175 C
J
°
T = 25 C
J
V
= 25V
DS
20µs PULSE WIDTH
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
6
7
8
9
10
11
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig. 4 Normalized On-Resistance
Fig. 3 Typical Transfer Characteristics
vs. Temperature
3
2017-04-27
IRFB/IB/S/SL41N15DPbF
20
16
12
8
100000
10000
1000
100
I = 25A
D
V
= 0V,
= C
f = 1 MHZ
+ C
GS
C
C
C
,
C
SHORTED
iss
gs
gd
ds
V
V
V
= 120V
= 75V
= 30V
DS
DS
DS
= C
rss
oss
gd
= C + C
ds
gd
Ciss
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
0
20
40
60
80 100
120
1
10
100
1000
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs.
Fig 6. Typical Gate Charge vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BYR
DS(on)
10us
°
T = 175 C
J
100us
1ms
°
T = 25 C
J
1
10ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
1
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
1.8
V
, Drain-to-Source Voltage (V)
DS
V
,Source-to-Drain Voltage (V)
SD
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
2017-04-27
4
IRFB/IB/S/SL41N15DPbF
50
40
30
20
10
0
Fig 10a. Switching Time Test Circuit
25
50
75
100
125
150
175
°
( C)
T , Case Temperature
C
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
2
DM
0.1
0.10
0.05
t
1
t
2
0.02
0.01
Notes:
1. Dutyfactor D = t / t
SINGLE PULSE
(THERMAL RESPONSE)
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2017-04-27
IRFB/IB/S/SL41N15DPbF
1200
1000
800
600
400
200
0
I
D
15V
TOP
10A
21A
25A
BOTTOM
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
°
Starting T , Junction Temperature
( C)
V
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
2017-04-27
6
IRFB/IB/S/SL41N15DPbF
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
7
2017-04-27
IRFB/IB/S/SL41N15DPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
E X A M P L E :
T H IS IS A N IR F 1 0 1 0
L O C O D E 1 7 8 9
A S S E M B L E D
IN T H E A S S E M B L Y L IN E "C "
P A R T N U M B E R
D A T E C O D E
T
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
O
N
W
W
1 9 , 2 0 0 0
Y E A R
E E K 1 9
L IN E
0
=
2 0 0 0
N o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d F r e e "
A S S E M B L Y
W
-
L O
T C O D E
C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to website at http://www.irf.com/package/
8
2017-04-27
IRFB/IB/S/SL41N15DPbF
TO-220 Full-Pak Package Outline (Dimensions are shown in millimeters (inches))
TO-220 Full-Pak Part Marking Information
TO-220AB Full-Pak packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to website at http://www.irf.com/package/
9
2017-04-27
IRFB/IB/S/SL41N15DPbF
(Dimensions are
D2-Pak (TO-263AB) Package Outline
shown in millimeters (inches))
D2-Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
F530S
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
DATE CODE
YEAR 0 = 2000
WEEK 02
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
F530S
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
ASSEMBLY
LOT CODE
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to website at http://www.irf.com/package/
10
2017-04-27
IRFB/IB/S/SL41N15DPbF
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOTCODE 1789
PART NUMBER
INTERNATIONAL
ASSEMBLED ON WW19, 1997
RECTIFIER
IN THE ASSEMBLY LINE "C"
LOGO
DATE CODE
YEAR7 = 1997
WEEK 19
ASSEMBLY
LOT CODE
LINE C
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR7 = 1997
ASSEMBLY
LOT CODE
WEEK 19
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to website at http://www.irf.com/package/
11
2017-04-27
IRFB/IB/S/SL41N15DPbF
D2-Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
2017-04-27
IRFB/IB/S/SL41N15DPbF
Qualification Information
Qualification Level
Industrial
(per JEDEC JESD47F) †
TO-220AB
N/A
TO-220 Full-Pak
TO-262
Moisture Sensitivity Level
RoHS Compliant
MSL1
D2-Pak
(per JEDEC J-STD-020D) ††
Yes
†
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Changed datasheet with Infineon logo - all pages.
Corrected Package Outline on page 8,9,10,11.
Added disclaimer on last page.
04/27/2017
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,
CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
WARNINGS
Due to technical requirements products may
In addition, any information given in this contain dangerous substances. For information on
document is subject to customer’s compliance the types in question please contact your nearest
with its obligations stated in this document and Infineon Technologies office.
any applicable legal requirements, norms and
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Except as otherwise explicitly approved by Infineon
any use of the product of Infineon Technologies in
Technologies in a written document signed by
customer’s applications.
Document reference
ifx1
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products
may not be used in any applications where a
failure of the product or any consequences of the
use thereof can reasonably be expected to result in
personal injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility
of
customer’s
technical
departments to evaluate the suitability of the
product for the intended application and the
completeness of the product information given in
this document with respect to such application.
13
2017-04-27
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