IRFS4227 [ISC]
N-Channel MOSFET Transistor;![IRFS4227](http://pdffile.icpdf.com/pdf2/p00322/img/icpdf/IRFS4227_1980343_icpdf.jpg)
型号: | IRFS4227 |
厂家: | ![]() |
描述: | N-Channel MOSFET Transistor |
文件: | 总2页 (文件大小:334K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRFS4227, IIRFS4227
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤22mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VDSS
VGS
ID
PARAMETER
VALUE
200
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
62
V
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation @TC=25℃
Max. Operating Junction Temperature
Storage Temperature
A
IDM
260
A
PD
330
W
℃
℃
175
Tj
-40~175
Tstg
·THERMAL CHARACTERISTICS
SYMBOL
Rth(j-c)
PARAMETER
MAX
UNIT
Channel-to-case thermal resistance
℃/W
℃/W
0.45
40
Channel-to-ambient thermal resistance
Rth(j-a)
1
isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRFS4227, IIRFS4227
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
BVDSS
VGS(th)
RDS(on)
IGSS
PARAMETER
CONDITIONS
MIN
200
3
TYP
MAX
UNIT
V
Drain-Source Breakdown Voltage VGS=0V; ID=250μA
Gate Threshold Voltage
5
22
V
VDS=VGS; ID=250μA
VGS=10V; ID=46A
VGS= ±20V
Drain-Source On-Resistance
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
mΩ
μA
μA
V
±0.1
20
IDSS
VDS=200V; VGS= 0V
Is=46A, VGS = 0V
VSD
1.3
2
isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
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