IRFR9120NTRLPBF [INFINEON]
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3;
| 型号： | IRFR9120NTRLPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95020A
IRFR9120NPbF
IRFU9120NPbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel
D
VDSS = -100V
RDS(on) = 0.48Ω
ID = -6.6A
l Surface Mount (IRFR9120N)
l StraightLead(IRFU9120N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
and reliable device for use in a wide variety of applications.
D-Pak
I-Pak
TO-251AA
TO-252AA
The D-Pak is designed for surface mounting using vapor
phase, infrared, orwavesolderingtechniques. Thestraight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-6.6
-4.2
-26
A
PD @TC = 25°C
Power Dissipation
40
W
W/°C
V
Linear Derating Factor
0.32
± 20
100
-6.6
4.0
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
-5.0
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
3.1
Units
RθJC
RθJA
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
50
°C/W
RθJA
110
www.irf.com
1
12/14/04
IRFR/U9120NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-100
Conditions
VGS = 0V, ID = -250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient -0.11 V/°C Reference to 25°C, ID = -1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance 0.48
Ω
V
S
VGS = -10V, ID = -3.9A
VDS = VGS, ID = -250µA
VDS = -50V, ID = -4.0A
VDS = -100V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
-2.0 -4.0
1.4
Forward Transconductance
-25
-250
100
-100
27
5.0
15
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = -4.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = -80V
VGS = -10V, See Fig. 6 and 13
14
47
28
31
VDD = -50V
RiseTime
ID = -4.0A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 12 Ω
RD =12 Ω, See Fig. 10
Between lead,
6mm (0.25in.)
D
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
nH
pF
G
from package
7.5
and center of die contactꢀ
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
350
110
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
70
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
-6.6
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
-26
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
-1.6
100 150
420 630
V
TJ = 25°C, IS = -3.9A, VGS = 0V
ns
TJ = 25°C, IF = -4.0A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 13mH
ꢀThis is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
RG = 25Ω, IAS = -3.9A. (See Figure 12)
ISD ≤ -4.0A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
Uses IRF9520N data and test conditions.
,
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
IRFR/U9120NPbF
100
10
1
100
10
1
VGS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
TOP
BOTTOM -4.5V
BOTTOM -4.5V
-4.5V
20µs PULSE WIDTH
-4.5V
20µs PULSE WIDTH
T = 25 C
J
°
T = 150 C
J
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.5
-6.7A
=
I
D
2.0
°
T = 25 C
J
10
1.5
1.0
0.5
0.0
°
T = 150 C
J
1
V
= -50V
DS
20µs PULSE WIDTH
V
=-10V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
4
5
6
7
8
9
10
T , Junction Temperature ( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRFR/U9120NPbF
20
16
12
8
800
I
D
= -4.0 A
V
= 0V,
f = 1MHz
C
GS
V
V
V
=-80V
=-50V
=-20V
DS
DS
DS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
C
= C
gd
rss
C
= C + C
ds
oss
600
400
200
0
C
iss
C
C
oss
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
5
10
15
20
25
1
10
100
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 150 C
J
10
°
T = 25 C
100us
J
1ms
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
0.2
1
10
100
1000
0.8
1.4
2.0
2.6
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRFR/U9120NPbF
RD
8.0
6.0
4.0
2.0
0.0
VDS
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
2
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
thJC C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFR/U9120NPbF
L
V
DS
250
200
150
100
50
I
D
TOP
-1.7A
-2.5A
BOTTOM -3.9A
D.U.T
AS
-
+
R
G
V
DD
A
I
DRIVER
-20V
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
I
AS
0
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRFR/U9120NPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
IRFR/U9120NPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S EMBL Y
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WE E K 16
IRFU120
916A
ASSEMBLED ON WW16, 1999
IN THE ASSEMBLY LINE "A"
12
34
LINE A
Note: "P" in assembly line position
AS S E MB L Y
LOT CODE
indicates "L ead-F ree"
OR
PART NUMBER
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12 34
YEAR 9 = 1999
AS S E MB L Y
LOT CODE
WEE K 16
A= ASSEMBLYSITE CODE
IRFR/U9120NPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
WIT H AS S E MBL Y
DATE CODE
YEAR 9 = 1999
WEEK 19
RECTIFIER
LOGO
IRFU120
919A
78
LOT CODE 5678
ASS EMBLED ON WW 19, 1999
IN THE ASSEMBLY LINE "A"
56
LINE A
AS S E MB L Y
LOT CODE
Note: "P" in assembly line
pos ition i ndicates "L ead-F ree"
OR
PART NUMBER
DAT E CODE
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56 78
YEAR 9 = 1999
AS S E MB LY
LOT CODE
WE EK 19
A = AS S E MB L Y S IT E CODE
IRFR/U9120NPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
IRFR9120NTRRPBF
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
INFINEON
IRFR9120TR
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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