IRFL110PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFL110PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95317
IRFL110PbF
HEXFET® Power MOSFET
ꢀ Surface Mount
D
ꢀ Available in Tape & Reel
ꢀ Dynamic dv/dt Rating
ꢀ Repetitive Avalanche Rated
ꢀ Fast Switching
VDSS = 100V
R
DS(on) = 0.54Ω
ꢀ Ease of Paralleling
ꢀ Simple Drive Requirements
ꢀ Lead-Free
G
ID = 1.5A
S
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
andcost-effectiveness.
TheSOT-223packageisdesignedforsurface-mountusing
vapor phase, infra red, or wave soldering techniques. Its
uniquepackagedesignallowsforeasyautomaticpick-and-
place as with other SOT or SOIC packages but has the
addedadvantageofimprovedthermalperformancedueto
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.
SOT-223
Absolute Maximum Ratings
Parameter
Max.
1.5
Units
ID @ Tc = 25°C
ID @ Tc = 100°C
IDM
Continuous Drain Current, VGS @ 10 V
Continuous Drain Current, VGS @ 10 V
Pulsed Drain Current ꢀ
0.96
12
A
PD @Tc = 25°C
PD @TA = 25°C
PowerDissipation
3.1
Power Dissipation (PCB Mount)**
LinearDeratingFactor
2.0
W
0.025
0.017
-/+20
150
1.5
Linear Derating Factor (PCB Mount)**
Gate-to-SourceVoltage
W/°C
V
VGS
EAS
Single Pulse Avalanche Energyꢁ
AvalancheCurrentꢀ
mJ
A
IAR
EAR
RepetitiveAvalancheEnergyꢀ
Peak Diode Recovery dv/dt ꢂ
JunctionandStorageTemperatureRange
Soldewring Temperature, for 10 seconds
0.31
5.5
mJ
V/ns
dv/dt
TJ, TSTG
-55 to + 150
300 (1.6mm from case)
°C
Thermal Resistance
Parameter
Junction-to-PCB
Typ.
–––
–––
Max.
40
Units
RθJC
RθJA
°C/W
Junction-to-Ambient.(PCBMount)**
60
** When mounted on 1'' square pcb (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
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1
05/26/04
IRFL110PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
––– 0.63 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-SourceBreakdownVoltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ BreakdownVoltageTemp.Coefficient
RDS(on)
VGS(th)
gfs
StaticDrain-to-SourceOn-Resistance
GateThresholdVoltage
––– ––– 0.54
Ω
V
S
VGS = 10V, ID = 0.90A ꢀ
VDS = VGS, ID = 250µA
2.0
1.1
––– 4.0
––– –––
ForwardTransconductance
VDS = 50V, ID = 0.90Aꢀ
VDS = 100V, VGS = 0V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 8.3
––– ––– 2.3
––– ––– 3.8
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
VDS = 80V, VGS = 0V, TJ = 125°C
Gate-to-SourceForwardLeakage
Gate-to-SourceReverseLeakage
Total Gate Charge
VGS = 20V
VGS = -20V
ID = 5.6A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-On Delay Time
Rise Time
nC VDS = 80V
VGS = 10V, See Fig. 6 and 13 ꢀ
–––
–––
–––
–––
6.9 –––
16 –––
15 –––
VDD = 50V
ID = 5.6A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 24 Ω
RD = 8.4 Ω, See Fig. 10 ꢀ
9.4
–––
D
Betweenlead,6mm(0.25in)
from package and center
of die contact.
LD
InternalDrainInductance
–––
4.0 –––
nH
G
LS
InternalSourceInductance
–––
6.0 –––
S
Ciss
Coss
Crss
InputCapacitance
––– 180 –––
VGS = 0V
OutputCapacitance
–––
–––
81 –––
15 –––
pF
VDS = 25V
ReverseTransferCapacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
ContinuousSourceCurrent
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
IS
––– ––– 1.5
A
ISM
Pulsed Source Current
(Body Diode) ꢁ
integralreverse
–––
12
–––
p-njunctiondiode.
VSD
trr
DiodeForwardVoltage
Reverse Recovery Time
Reverse RecoveryCharge
ForwardTurn-OnTime
––– ––– 2.5
––– 100 200
––– 0.44 0.88
V
TJ = 25°C, IS = 1.5A, VGS = 0V ꢀ
TJ = 25°C, IF = 5.6A
ns
µC
Qrr
ton
di/dt = 100A/µsꢀ
Intrinsicturn-ontimeisnegligible(turn-onisdominatedbyLS+LD)
Notes:
ꢀ Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ꢁ ISD ≤ 5.6A, di/dt ≤ 75A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
ꢂ VDD=25V, starting TJ = 25°C, L = 25 mH
RG = 25Ω, IAS = 3.0A (See Figure 12)
ꢃ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRFL110PbF
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3
IRFL110PbF
4
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IRFL110PbF
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IRFL110PbF
6
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IRFL110PbF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
THIS IS AN IRFL014
LOT CODE
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
FL014
314P
AXXXX
A = ASSEMBLY SITE
CODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
BOTTOM
TOP
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
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IRFL110PbF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161)
0.35 (.013)
0.25 (.010)
1.85 (.072)
3.90 (.154)
2.05 (.080)
1.95 (.077)
1.65 (.065)
TR
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
12.10 (.475)
11.90 (.469)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
50.00 (1.969)
MIN.
18.40 (.724)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
14.40 (.566)
12.40 (.488)
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/04
8
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