IRFH8324 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;型号: | IRFH8324 |
厂家: | Infineon |
描述: | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
文件: | 总10页 (文件大小:268K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRFH8324PbF
HEXFET® Power MOSFET
VDS
30
V
V
Vgs max
± 20
RDS(on) max
(@VGS = 10V)
4.1
m
Ω
(@VGS = 4.5V)
6.3
14
Qg typ.
nC
A
PQFN 5X6 mm
ID
50
(@Tc(Bottom) = 25°C)
Applications
• Synchronous MOSFET for high frequency buck converters
FeaturesandBenefits
Features
Benefits
Low Thermal Resistance to PCB (< 2.3°C/W)
Low Profile (<1.2mm)
Enable better thermal dissipation
results in Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
Easier Manufacturing
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
Standard Pack
Note
Form
Tape and Reel
Tape and Reel
Quantity
4000
IRFH8324TRPBF
IRFH8324TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
400
EOL notice #259
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
30
± 20
23
V
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
I
I
I
I
I
I
@ TA = 25°C
D
D
D
D
D
@ TA = 70°C
18
90
57
50
@ TC(Bottom) = 25°C
@ TC(Bottom) = 100°C
@ TC = 25°C
A
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
200
3.6
54
DM
Power Dissipation
P
P
@TA = 25°C
D
D
W
Power Dissipation
@TC(Bottom) = 25°C
0.029
-55 to + 150
Linear Derating Factor
Operating Junction and
W/°C
°C
T
T
J
Storage Temperature Range
STG
Notes through are on page 9
1
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
June 2, 2015
IRFH8324PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
4.1
V
ΔΒVDSS/ΔTJ
RDS(on)
––– 0.019
V/°C Reference to 25°C, ID = 1.0mA
–––
–––
1.35
–––
–––
–––
–––
–––
72
3.3
5.0
1.8
-6.2
–––
–––
–––
–––
–––
31
VGS = 10V, ID = 20A
mΩ
6.3
VGS = 4.5V, ID = 16A
VGS(th)
Gate Threshold Voltage
2.35
V
VDS = VGS, ID = 50μA
Δ
VGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
1.0
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 24V, VGS = 0V
μA
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = 20V
nA
S
VGS = -20V
gfs
Qg
Qg
VDS = 10V, ID = 20A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC VGS = 10V, VDS = 15V, ID = 20A
Total Gate Charge
14
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
4.4
2.2
3.5
3.9
5.7
13
VDS = 15V
Qgs2
Qgd
VGS = 4.5V
nC
ID = 20A
Qgodr
Gate Charge Overdrive
Qsw
Switch Charge (Qgs2 + Qgd
Output Charge
)
Qoss
RG
nC VDS = 16V, VGS = 0V
Ω
Gate Resistance
Turn-On Delay Time
Rise Time
1.1
13
–––
–––
td(on)
tr
td(off)
tf
VDD = 15V, VGS = 4.5V
26
–––
–––
–––
–––
–––
–––
ID = 20A
ns
Ω
RG=1.8
Turn-Off Delay Time
Fall Time
14
8.5
2380
500
205
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VGS = 0V
pF
VDS = 10V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
94
20
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
MOSFET symbol
–––
–––
50
showing the
integral reverse
(Body Diode)
Pulsed Source Current
A
G
ISM
–––
–––
200
S
p-n junction diode.
(Body Diode)
VSD
trr
T = 25°C, I = 20A, V = 0V
Diode Forward Voltage
–––
–––
–––
–––
16
1.0
24
38
V
J
S
GS
T = 25°C, I = 20A, VDD = 15V
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
J
F
Qrr
ton
di/dt = 360 A/μs
25
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
2.3
32
Units
Junction-to-Case
RθJC (Bottom)
RθJC (Top)
RθJA
Junction-to-Case
°C/W
Junction-to-Ambient
Junction-to-Ambient
35
RθJA (<10s)
23
2
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
June 2, 2015
IRFH8324PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
BOTTOM
BOTTOM
2.5V
2.5V
1
60μs PULSE WIDTH
Tj = 150°C
≤
60μs PULSE WIDTH
Tj = 25°C
≤
0.1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
1.8
I
= 20A
D
V
= 10V
GS
1.6
1.4
1.2
1.0
0.8
0.6
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
≤
60μs PULSE WIDTH
1.0
1
2
3
4
5
6
7
8
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
10000
1000
100
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 20A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
gd
= C + C
V
V
V
= 24V
= 15V
= 6.0V
DS
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
C
iss
oss
C
rss
1
10
, Drain-to-Source Voltage (V)
100
0
5
10 15 20 25 30 35 40
Q , Total Gate Charge (nC)
V
DS
G
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
June 2, 2015
IRFH8324PbF
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
100μsec
J
1msec
Limited by
T = 25°C
J
Source Bonding
Technology
10msec
DC
1
Tc = 25°C
Tj = 150°C
V
= 0V
GS
Single Pulse
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
, Source-to-Drain Voltage (V)
0
1
10
100
V
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
90
2.6
Limited By Source
Bonding Technology
80
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
70
60
50
40
30
20
10
0
I
I
I
I
= 50μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
, Case Temperature (°C)
T , Temperature ( °C )
J
C
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case(Bottom)Temperature
10
D = 0.50
1
0.1
0.20
0.10
0.05
0.02
0.01
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
June 2, 2015
IRFH8324PbF
12
11
10
9
400
350
300
250
200
150
100
50
I
I
= 20A
D
D
TOP
4.9A
9.4A
BOTTOM 20A
8
7
6
T
= 125°C
J
5
4
3
T
= 25°C
J
2
0
0
5
10
15
20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
www.irf.com © 2015 International Rectifier
Fig 15b. Switching Time Waveforms
5
Submit Datasheet Feedback
June 2, 2015
IRFH8324PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
June 2, 2015
IRFH8324PbF
PQFN 5x6 Outline "E" Package Details
PQFN 5x6 Outline "G" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
June 2, 2015
IRFH8324PbF
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PQFN 5x6 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
DESCRIPTION
Dimension des ign to accommodate the component width
Dimension des ign to accommodate the component lenght
Dimension des ign to accommodate the component thickness
Overall width of the carrier tape
Bo
Ko
W
P
1
Pitch between s ucces s ive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimens ion are nominal
Package
Type
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
Ao
Bo
Ko
P1
W
Pin 1
(mm)
(mm)
(mm)
(mm)
(mm)
Quadrant
(mm)
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
June 2, 2015
IRFH8324PbF
Qualification information†
Cons umer††
(per JE DE C JE S D47F ††† guidelines )
Qualification level
MS L1
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JE DE C J-S TD-020D†††
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.47mH, RG = 50Ω, IAS = 20A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 50A by source bonding technology.
Revision History
Date
Comment
•
•
•
•
•
1/21/2014
Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259).
Updated data sheet with the new IR corporate template.
Updated package outline for “option E” and added package outline for “option G” on page 7
Updated "IFX" logo on page 1 &9.
6/2/2015
Updated tape and reel on page 8.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
June 2, 2015
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
相关型号:
IRFH8324PBF
Power Field-Effect Transistor, 23A I(D), 30V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
IRFH8325TRPBF
Power Field-Effect Transistor, 21A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
IRFH8330TRPBF
Power Field-Effect Transistor, 17A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
©2020 ICPDF网 联系我们和版权申明