IRF9310 [INFINEON]
-30V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装;
| 型号： | IRF9310 |
| 厂家： | 
Infineon |
| 描述： | -30V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装 |
| 文件： | 总9页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97437A
IRF9310PbF
HEXFET® Power MOSFET
VDS
-30
4.6
V
RDS(on) max
(@VGS = 10V)
m
Ω
ID
-20
A
(@TA = 25°C)
SO-8
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Resulting Benefits
Features
Low RDSon (≤ 4.6mΩ)
Lower Conduction Losses
Multi-Vendor Compatibility
Environmentally Friendlier
results in
Industry-Standard SO8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
⇒
Orderable part number
Package Type
Standard Pack
Note
Form
Tube/Bulk
Quantity
95
IRF9310PbF
IRF9310TRPbF
SO8
SO8
Tape and Reel
4000
Absolute Maximum Ratings
Max.
-30
Parameter
Units
VDS
Drain-to-Source Voltage
V
± 20
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
V
GS
-20
I
I
I
@ TA = 25°C
D
D
-16
A
@ TA = 70°C
-160
DM
2.5
P
P
@TA = 25°C
@TA = 70°C
Power Dissipation
D
D
W
W/°C
°C
1.6
Power Dissipation
0.02
Linear Derating Factor
-55 to + 150
Operating Junction and
T
T
J
Storage Temperature Range
STG
Notes through ꢀ are on page 2
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1
03/19/2010
IRF9310PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-30 ––– –––
––– 0.020 ––– V/°C
BVDSS
∆Β
V
∆
V
DSS/ TJ
Breakdown Voltage Temp. Coefficient
V
GS = -10V, ID = -20A
RDS(on)
–––
–––
-1.3
–––
–––
–––
–––
–––
39
3.9
5.8
-1.8
-5.8
–––
–––
–––
–––
–––
58
4.6
6.8
Static Drain-to-Source On-Resistance
Ω
m
VGS = -4.5V, ID = -16A
VDS = VGS, ID = -100µA
VDS = -24V, VGS = 0V
VGS(th)
Gate Threshold Voltage
-2.4
V
∆
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
IDSS
-1.0
µA
VDS = -24V, VGS = 0V, TJ = 125°C
-150
VGS = -20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
-100
nA
V
V
V
GS = 20V
100
DS = -10V, ID = -16A
DS = -15V, VGS = -4.5V, ID = - 16A
gfs
Qg
–––
–––
165
–––
–––
–––
–––
–––
–––
–––
S
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
VGS = -10V
DS = -15V
Qg
Total Gate Charge
110
17
V
Qgs
Qgd
RG
td(on)
tr
nC
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
ID = -16A
28
2.8
25
Ω
VDD = -15V, VGS = -4.5V
ID = -1.0A
Turn-On Delay Time
Rise Time
47
ns
pF
R
G = 1.8Ω
See Figs. 20a &20b
GS = 0V
td(off)
tf
Turn-Off Delay Time
Fall Time
65
70
V
Ciss
Coss
Crss
Input Capacitance
––– 5250 –––
––– 1300 –––
VDS = -15V
ƒ = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
–––
880
–––
Avalanche Characteristics
Typ.
–––
–––
Max.
Parameter
Units
mJ
EAS
IAR
630
-16
Single Pulse Avalanche Energy
Avalanche Current
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
D
S
IS
MOSFET symbol
Continuous Source Current
–––
–––
-2.5
showing the
(Body Diode)
A
G
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
-160
VSD
trr
T = 25°C, I = -2.5A, V = 0V
J S GS
Diode Forward Voltage
–––
–––
–––
–––
71
-1.2
107
18
V
T = 25°C, I = -2.5A, VDD = -24V
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
J
F
Qrr
di/dt = 100A/µs
12
Thermal Resistance
Typ.
–––
–––
Max.
20
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Units
RθJL
RθJA
°C/W
50
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 4.9mH, RG = 25Ω, IAS = -16A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
ꢀ Rθ is measured at TJ of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
2
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IRF9310PbF
1000
100
10
1000
100
10
VGS
-10V
60µs PULSE WIDTH
Tj = 25°C
VGS
-10V
≤
60µs PULSE WIDTH
Tj = 150°C
≤
TOP
TOP
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
-2.3V
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
-2.3V
BOTTOM
BOTTOM
1
0.1
0.01
-2.3V
-2.3V
1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
1.6
1.4
1.2
1.0
0.8
0.6
I
= -20A
D
V
= -10V
GS
100
10
T
= 150°C
J
T
= 25°C
J
V
= -10V
DS
≤
60µs PULSE WIDTH
1.0
1
2
3
4
5
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = -16A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
gd
= C + C
V
= -24V
= -15V
ds
gd
DS
10.0
8.0
6.0
4.0
2.0
0.0
V
DS
C
iss
C
C
oss
rss
100
1
10
-V , Drain-to-Source Voltage (V)
100
0
25
50
75
100
125
150
Q
Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRF9310PbF
1000.00
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
100.00
1msec
T
= 150°C
J
10.00
1.00
0.10
T
= 25°C
J
1
T
= 25°C
A
10msec
10
Tj = 150°C
V
= 0V
GS
Single Pulse
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.1
1
100
-V , Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
2.5
20
15
10
5
2.0
1.5
1.0
I
= -100µA
D
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T
, Temperature ( °C )
T
, Ambient Temperature (°C)
J
A
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
AmbientTemperature
100
D = 0.50
10
1
0.20
0.10
0.05
0.02
0.01
0.1
0.01
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF9310PbF
12
10
8
14
12
10
8
I
= -20A
D
V
= -4.5V
GS
T = 125°C
6
J
6
V
= -10V
GS
4
4
T = 25°C
J
2
2
2
4
6
8
10 12 14 16 18 20
0
20 40 60 80 100 120 140 160
-I , Drain Current (A)
D
-V
Gate -to -Source Voltage (V)
GS,
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
1000
2700
I
D
2400
2100
1800
1500
1200
900
TOP
-1.8A
-2.7A
BOTTOM -16A
800
600
400
200
0
600
300
0
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
Time (sec)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 16. Typical Power vs. Time
Driver Gate Drive
P.W.
Period
Period
D =
D.U.T *
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
* Reverse Polarity of D.U.T for P-Channel
Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
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5
IRF9310PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
L
V
DS
I
AS
D.U.T
R
G
V
DD
I
A
AS
-VGS
DRIVER
0.01
Ω
t
p
t
p
V
(BR)DSS
15V
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
RD
VDS
t
t
r
t
t
f
d(on)
d(off)
VGS
V
GS
D.U.T.
10%
RG
-
+
VDD
-VGS
90%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
6
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IRF9310PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRF9310PbF
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification Information†
Consumer ††
Qualification level
(per JEDEC JESD47F††† guidelines)
MSL1
(per JEDEC J-STD-020D†††
Moisture Sensitivity Level
RoHS Compliant
SO-8
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comment
3/18/2010
Figure 16, Power vs. Time curve is modified and updated. All other parameters remain unchanged.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/2010
8
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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