IRF9321 [INFINEON]
-30V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装;
| 型号： | IRF9321 |
| 厂家： | 
Infineon |
| 描述： | -30V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装 |
| 文件： | 总9页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95960
IRF9321PbF
HEXFET® Power MOSFET
VDS
-30
7.2
V
RDS(on) max
(@VGS = -10V)
m
Ω
Ω
RDS(on) max
(@VGS = -4.5V)
11.2
34
m
Qg (typical)
nC
A
SO-8
ID
-15
(@TA = 25°C)
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features
Resulting Benefits
results in
Industry-Standard SO-8 Package
Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
⇒
Orderable part number
Package Type
Standard Pack
Form Quantity
Note
IRF9321PbF
IRF9321TRPbF
SO8
SO8
Tube/Bulk
Tape and Reel
95
4000
Absolute Maximum Ratings
Max.
Parameter
Drain-to-Source Voltage
Units
VDS
-30
±20
-15
V
Gate-to-Source Voltage
V
GS
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
I
I
I
@ TA = 25°C
D
D
-12
A
@ TA = 70°C
-120
2.5
DM
Power Dissipation
P
D
P
D
@TA = 25°C
@TA = 70°C
W
W/°C
°C
1.6
0.02
Power Dissipation
Linear Derating Factor
Operating Junction and
-55 to + 150
T
T
J
Storage Temperature Range
STG
Notes through are on page 2
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1
05/11/2010
IRF9321PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -15A
Parameter
Drain-to-Source Breakdown Voltage
Min.
Typ.
–––
0.021
5.9
Max.
–––
–––
7.2
Units
V
BVDSS
∆Β
RDS(on)
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
30
∆
V
DSS/ TJ
Breakdown Voltage Temp. Coefficient
V/°C
Static Drain-to-Source On-Resistance
Ω
m
VGS = -4.5V, ID = -12A
9.3
11.2
-2.4
–––
-1.0
-150
-100
100
–––
–––
98
VGS(th)
VDS = VGS, ID = -50µA
Gate Threshold Voltage
-1.8
-5.9
–––
–––
–––
–––
–––
34
V
∆
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
mV/°C
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
IDSS
µA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
VGS = 20V
VDS = -10V, ID = -12A
VDS = -15V, VGS = -4.5V, ID = - 12A
gfs
Qg
S
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
V
GS = -10V
Qg
Total Gate Charge
65
VDS = -15V
ID = -12A
Qgs
Qgd
RG
td(on)
tr
nC
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
16
18
Ω
V
DD = -30V, VGS = -4.5V
Turn-On Delay Time
Rise Time
21
ID = -1.0A
79
ns
pF
Ω
RG = 6.8
See Figs. 19a & 19b
VGS = 0V
td(off)
tf
Turn-Off Delay Time
Fall Time
185
145
2590
590
360
Ciss
Coss
Crss
Input Capacitance
VDS = -25V
Output Capacitance
Reverse Transfer Capacitance
ƒ = 1.0MHz
Avalanche Characteristics
Typ.
–––
–––
Max.
310
-12
Parameter
Units
mJ
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
A
Diode Characteristics
Conditions
Parameter
Min.
Typ.
Max.
Units
D
IS
MOSFET symbol
Continuous Source Current
–––
–––
-2.5
showing the
(Body Diode)
A
G
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
-120
S
VSD
trr
T = 25°C, I = -2.5A, V = 0V
J S GS
Diode Forward Voltage
–––
–––
–––
–––
38
-1.2
57
V
T = 25°C, I = -2.5A, VDD = -24V
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
J
F
Qrr
di/dt = 100/µs
24
36
Thermal Resistance
Typ.
–––
–––
Max.
20
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Units
RθJL
RθJA
°C/W
50
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 4.3mH, RG = 25Ω, IAS = -12A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
ꢀ Rθ is measured at TJ of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
2
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IRF9321PbF
1000
100
10
1000
100
10
VGS
-10V
VGS
-10V
TOP
TOP
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
BOTTOM
BOTTOM
1
-2.5V
1
-2.5V
0.1
0.01
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
1.6
1.4
1.2
1.0
0.8
0.6
I
= -15A
D
V
= -10V
GS
100
10
1
T
= 25°C
J
T = 150°C
J
V
= -10V
DS
≤
60µs PULSE WIDTH
0.1
1
2
3
4
5
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
14.0
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
I = -12A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
= C
rss
oss
gd
= C + C
V
V
V
= -24V
= -15V
= -6.0V
DS
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
C
oss
rss
100
0
25
50
75
100
1
10
-V , Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRF9321PbF
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
1msec
100
T
= 150°C
J
10msec
T
= 25°C
V
DC
10
J
1
T
= 25°C
A
Tj = 150°C
Single Pulse
= 0V
GS
1.0
0.1
0.01
0.1
1
10
100
0.3
0.5
0.7
0.9
1.1
1.3
-V , Drain-to-Source Voltage (V)
-V , Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
2.4
15
2.2
2.0
1.8
1.6
1.4
1.2
1.0
10
5
I
= -50µA
D
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T
, Temperature ( °C )
T
, Ambient Temperature (°C)
J
A
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
AmbientTemperature
100
D = 0.50
10
1
0.20
0.10
0.05
0.02
0.01
0.1
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF9321PbF
20
18
16
14
12
10
8
60
50
40
30
20
10
0
I
= -15A
D
Vgs = -4.5V
T
T
= 125°C
= 25°C
J
J
6
4
Vgs = -10V
2
0
2
4
6
8
10 12 14 16 18 20
0
20
40
60
80
100
120
-I , Drain Current (A)
D
-V
Gate -to -Source Voltage (V)
GS,
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
1400
1000
I
D
1200
1000
800
600
400
200
0
TOP
-1.4A
-2.2A
800
600
400
200
0
BOTTOM -12A
25
50
75
100
125
150
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Starting T , Junction Temperature (°C)
J
Time (sec)
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 15. Typical Power vs. Time
Driver Gate Drive
P.W.
Period
Period
D =
D.U.T *
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
* Reverse Polarity of D.U.T for P-Channel
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
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5
IRF9321PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
L
V
DS
I
AS
D.U.T
R
G
V
DD
I
A
AS
-VGS
DRIVER
0.01
Ω
t
p
t
p
V
(BR)DSS
15V
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
RD
VDS
t
t
r
t
t
f
d(on)
d(off)
VGS
V
GS
D.U.T.
10%
RG
-
+
VDD
-VGS
90%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
Fig 19a. Switching Time Test Circuit
Fig 19b. Switching Time Waveforms
6
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IRF9321PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRF9321PbF
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification Information†
Consumer ††
Qualification level
(per JEDEC JESD47F††† guidelines)
MSL1
(per JEDEC J-STD-020D†††
Moisture Sensitivity Level
RoHS Compliant
SO-8
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/2010
8
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
相关型号：
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Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
INFINEON
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