IRF7822PBF [INFINEON]
HEXFET㈢ Power MOSFET for DC-DC Converters; HEXFET㈢功率MOSFET的DC- DC转换器
| 型号： | IRF7822PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET for DC-DC Converters |
| 文件： | 总6页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95024
IRF7822PbF
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Lead-Free
A
D
1
2
3
4
8
7
S
S
D
6
5
S
D
D
Description
G
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
SO-8
Top View
DEVICE CHARACTERISTICSꢀ
The IRF7822 has been optimized for all parameters that
are critical in synchronous buck converters including
IRF7822
RDS
QG
5.0mΩ
44nC
12nC
27nC
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
(on)
The IRF7822 offers particulary low RDS(on) and high Cdv/
dt immunity for synchronous FET applications.
Qsw
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
Qoss
Absolute Maximum Ratings
Parameter
Symbol
IRF7822
Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 4.5V)
Pulsed Drain Current
Power Dissipation
VDS
VGS
ID
30
±12
V
TA = 25°C
TA = 70°C
18
13
A
IDM
PD
150
TA = 25°C
TA = 70°C
3.1
W
3.0
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
TJ,TSTG
IS
–55 to 150
3.8
°C
A
ISM
150
Thermal Resistance
Parameter
Max.
40
Units
°C/W
°C/W
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
RθJA
RθJL
20
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1
9/30/04
IRF7822PbF
Electrical Characteristics
Parameter
Min Typ Max Units
Conditions
Drain-to-Source
Breakdown Voltage
BVDSS
30
–
–
V
mΩ
V
VGS = 0V, ID = 250µA
Static Drain-Source
on Resistance
RDS
5.0
6.5
VGS = 4.5V, ID = 15A
(on)
Gate Threshold Voltage
Drain-Source Leakage
VGS(th)
IDSS
1.0
VDS = VGS,ID = 250µA
VDS = 24V, VGS = 0
30
Current
150
µA
nA
VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
Current
IGSS
±100
60
VGS = ±12V
Total Gate Chg Cont FET
Total Gate Chg Sync FET
QG
44
38
13
VGS=5.0V, ID=15A, VDS=16V
VGS = 5.0V, VDS< 100mV
VDS = 16V, ID = 15A
QG
Pre-Vth
QGS1
Gate-Source Charge
Post-Vth
QGS2
3.0
nC
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Qgs2 + Qgd)
Output Charge
QGD
Qsw
Qoss
RG
9.0
12
27
VDS = 16V, VGS = 0
Gate Resistance
Turn-on Delay Time
Rise Time
1.5
15
Ω
td (on)
tr
VDD = 16V, ID = 15A
VGS = 5.0V
5.5
22
ns
Turn-off Delay Time
Fall Time
td
Clamped Inductive Load
(off)
tf
12
Input Capacitance
Output Capacitance
Ciss
Coss
–
–
–
5500
1000
300
–
–
–
pF
VDS = 16V, VGS = 0
Reverse Transfer Capacitance Crss
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Units
Conditions
Diode Forward
Voltage*
VSD
Qrr
1.0
V
IS = 15A, VGS = 0V
Reverse Recovery
Charge
120
108
nC
di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
Reverse Recovery
Charge (with Parallel
Schottky)
Qrr(s)
nC
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Notes:
ꢀ
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS
measured at VGS = 5.0V, IF = 15A.
2
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IRF7822PbF
6
5
4
2
1
0
2.0
1.5
1.0
0.5
0.0
D
15A
=
I
= 15A
I
D
V
= 24V
DS
V
= 4.5V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
Q
20
30
40
50
T , Junction Temperature ( C)
J
, Total Gate Charge (nC)
G
Fig 1. Normalized On-Resistance
Fig 2. Typical Gate Charge Vs.
Vs. Temperature
Gate-to-Source Voltage
100000
10000
1000
V
C
= 0V,
f = 1 MHZ
GS
= C + C
,
C
ds
SHORTED
iss
gs
gd
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
I
= 15A
D
Coss
Crss
100
1
10
100
V
, Drain-to-Source Voltage (V)
DS
3.0
4.0
5.0
6.0
7.0
V
Gate -to -Source Voltage (V)
GS,
Fig 4. Typical Capacitance Vs.
Fig 3. On-Resistance Vs. Gate Voltage
Drain-to-Source Voltage
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3
IRF7822PbF
100.00
100
10
1
T = 175°C
J
°
T = 150 C
J
10.00
°
T = 25 C
J
T
= 25°C
J
V
= 15V
DS
20µs PULSE WIDTH
V
= 0 V
GS
1.00
0.1
0.2
0.5
0.7
1.0
1.2
1.0
2.0
3.0
4.0
5.0
V
,Source-to-Drain Voltage (V)
SD
V
, Gate-to-Source Voltage (V)
GS
Fig 5. Typical Transfer Characteristics
Fig 6. Typical Source-Drain Diode
Forward Voltage
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
P
DM
t
1
SINGLE PULSE
0.1
0.01
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T
= P
x Z
+ T
J
DM
thJA
A
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF7822PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES
MIN MAX
.0532 .0688
MILLIMETERS
DIM
A
D
B
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040 .0098
b
c
D
E
.013
.0075 .0098
.189 .1968
.020
8
1
7
2
6
3
5
6
H
0.25 [.010]
A
.1497 .1574
.050 BASIC
4
e
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284 .2440
.0099 .0196
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
.016
0°
.050
8°
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PR INT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING& TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WE E K
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A = AS S E MB LY S IT E CODE
LOT CODE
PART NUMBER
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5
IRF7822PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
6
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