IRF7101PBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRF7101PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总9页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95162
IRF7101PbF
HEXFET® Power MOSFET
l Adavanced Process Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
1
2
8
S1
G1
D1
VDSS = 20V
7
D1
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
3
4
6
S2
G2
D2
RDS(on) = 0.10Ω
5
D2
l Lead-Free
ID = 3.5A
Top View
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devicescanbeusedinanapplicationwithdramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
Max.
3.5
Units
ID @ TA = 25°C
ID @ TA = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
2.3
14
PD @TC = 25°C
Power Dissipation
2.0
W
W/°C
V
Linear Derating Factor
0.016
± 12
3.0
VGS
Gate-to-SourceVoltage
dv/dt
Peak Diode Recovery dv/dt
JunctionandStorage Temperature Range
Sodering Temperature, for 10 seconds
V/nS
TJ, TSTG
-55 to + 150
°C
300(1.6mm from case)
Thermal Resistance Ratings
Parameter
Min.
Typ.
Max
Units
RθJA
Maximum Junction-to-Ambient
62.5
°C/W
10/6/04
IRF7101PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20
0.025 V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
0.10
0.15
1.0 3.0
1.1
2.0
250
100
-100
15
2.0
3.6
7.0
10
24
30
VGS = 10V, ID = 1.8A
VGS = 4.5V, ID = 1.0A
VDS = VGS, ID = 250µA
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
VDS = 15V, ID = 3.5A
VDS = 20V, VGS = 0V
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
VDS = 16V, VGS = 0V, TJ = 125 °C
Gate-to-SourceForwardLeakage
Gate-to-SourceReverseLeakage
Total Gate Charge
V
V
GS = 12V
GS = - 12V
Qg
Qgs
Qgd
td(on)
tr
ID = 1.8A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 16V
VGS = 10V
VDD = 10V
ID = 1.8A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 8.2Ω
RD = 26Ω
D
S
LD
LS
Internal Drain Inductance
Internal Source Inductance
4.0
6.0
Between lead,6mm(0.25in.)
nH
pF
G
from package and center
of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
320
250
75
Output Capacitance
VDS = 15V
Reverse Transfer Capacitance
= 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
D
S
IS
2.0
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
14
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
1.2
V
TJ = 25°C, IS = 1.7A, VGS = 0V
36
41
54
62
ns
TJ = 25°C, IF = 1.7A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
ISD ≤ 3.5A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7101PbF
IRF7101PbF
IRF7101PbF
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7101PbF
RD
V
DS
VDS
90%
VGS
D.U.T.
RG
+ VDD
-
10%
10V
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 11b. Switching Time Waveforms
Fig 11a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
10V
+
Q
Q
GD
GS
V
DS
D.U.T.
-
V
G
V
GS
3mA
Charge
I
I
D
G
Current Sampling Resistors
Fig 12b. Basic Gate Charge Waveform
Fig 12a. Gate Charge Test Circuit
IRF7101PbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
*
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
IRF7101PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENS IONS ARE S HOWN IN MIL L IME T E RS [INCHES ].
4. OUT L INE CONF OR MS T O JEDEC OU T LINE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WE E K
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A = AS S E MB LY S IT E CODE
LOT CODE
PART NUMBER
IRF7101PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
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