IR180SG06HCBPBF [INFINEON]
Silicon Controlled Rectifier, 600V V(RRM), 1 Element, 4 INCH, WAFER;![IR180SG06HCBPBF](http://pdffile.icpdf.com/pdf2/p00300/img/icpdf/IR180SG12HPB_1815543_icpdf.jpg)
型号: | IR180SG06HCBPBF |
厂家: | ![]() |
描述: | Silicon Controlled Rectifier, 600V V(RRM), 1 Element, 4 INCH, WAFER 栅 栅极 |
文件: | 总3页 (文件大小:108K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Bulletin I0203J 06/98
IR180SG..HCB SERIES
PHASE CONTROL THYRISTORS
Junction Size:
Wafer Size:
Square 180 mils
4"
VRRM Class:
600 and 1200 V
Passivation Process:
Glassivated MESA
Reference IR Packaged Part: n. a.
Major Ratings and Characteristics
Parameters
Units
Test Conditions
VTM
Maximum On-state Voltage
1.3 V
TJ = 25°C, IT = 25 A
VRRM ReverseBreakdownVoltage
600and1200V TJ = 25°C, IRRM = 300 µA
(1)
IGT
VGT
IH
Max. Required DC Gate Current to Trigger
Max. Required DC Gate Voltage to Trigger
HoldingCurrentRange
45 mA
1.9 V
TJ =25°C, anodesupply=6V, resistiveload
TJ =25°C, anodesupply=6V, resistiveload
Anode supply = 6 V, resistive load
5 to 150 mA
IL
Maximum Latching Current
400 mA
Anode supply = 6 V, resistive load
(1)Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
180 x 180 mils (see drawing)
Nominal Front Metal Composition, Thickness
ChipDimensions
Wafer Diameter
WaferThickness
100 mm, with std. < 100 > flat
350 µm ± 10 µm
Maximum Width of Sawing Line
Reject Ink Dot Size
130µm
0.25mmdiameterminimum
Seedrawing
InkDotLocation
RecommendedStorageEnvironment
Storageinoriginalcontainer, indessicated
nitrogen,withnocontamination
www.irf.com
1
IR180SG..HCB Series
Bulletin I0203J 06/98
Ordering Information Table
Device Code
IR 180
S
G
12
H
CB
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
Type of Device: S = Solderable SCR
Passivation Process: G = Glassivated MESA
Voltage code: Code x 100 = VRRM
AvailableClass
06 = 600 V
12 =1200 V
Metallization: H = Silver (Anode) - Silver (Cathode)
CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
All dimensions are in millimeters
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2
IR180SG..HCB Series
Bulletin I0203J 06/98
Wafer Layout
TOP VIEW
N° 293 Basic Cells
All dimensions are in millimeters
www.irf.com
3
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